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公开(公告)号：KR1020120119350A
公开(公告)日：2012-10-31
申请号：KR1020110037215
申请日：2011-04-21
Applicant: 삼성전자주식회사
CPC classification number: H01L33/502 , H01L25/0753 , H01L27/15 , H01L33/50 , H01L33/54 , H01L33/58 , H01L2924/0002 , H01L2933/005 , H01L2924/00
Abstract: PURPOSE: A light emitting device module and a manufacturing method thereof are provided to directly install a light emitting device on a substrate and to directly install a lens having various shapes on the substrate. CONSTITUTION: An LED(Light Emitting Diode) module includes a substrate(110), a light emitting device(130), a fluorescent body layer(140), and a lens unit(150). The light emitting device is installed on the substrate through a bump(120). The fluorescent body covers the light emitting device. The lens unit is directly formed on the substrate. The lens unit covers the fluorescent body.
Abstract translation: 目的：提供一种发光器件模块及其制造方法，以将发光器件直接安装在基板上，并在基板上直接安装具有各种形状的透镜。 构成：LED（发光二极管）模块包括衬底（110），发光器件（130），荧光体层（140）和透镜单元（150）。 发光装置通过凸块（120）安装在基板上。 荧光体覆盖发光器件。 透镜单元直接形成在基板上。 透镜单元覆盖荧光体。
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公开(公告)号：KR1020120021592A
公开(公告)日：2012-03-09
申请号：KR1020100076823
申请日：2010-08-10
Applicant: 삼성전자주식회사
IPC: H01L33/50
CPC classification number: H01L33/507 , H01L33/502 , H01L33/52 , H01L33/58
Abstract: PURPOSE: A light emitting device package is provided to prevent the re-absorption of a fluorescent substance by forming the distance between a light-emitting device chip and a photo converter by 2-17times of the height of the light-emitting device chip. CONSTITUTION: A main body member(110) comprises a cavity(112). A light-emitting device chip(120) is mounted within the cavity. A photo converter(140) is formed in order to cover the cavity. The photo converter comprises a fluorescent layer more than a first floor. The distance between the photo converter and the light-emitting device chip is 2-17times of the height of the light-emitting device chip. A lens part is arranged on the upper side of the main body member. An UV reflective part reflects UV light emitted from the light-emitting device chip.
Abstract translation: 目的：提供发光器件封装，以通过将发光器件芯片和光电转换器之间的距离设置为发光器件芯片的高度的2-17倍来防止荧光物质的再吸收。 构成：主体构件（110）包括空腔（112）。 发光器件芯片（120）安装在腔内。 形成光转换器（140）以覆盖空腔。 光转换器包括多于一层的荧光层。 光转换器与发光元件芯片之间的距离是发光元件芯片的高度的2-17倍。 透镜部配置在主体部件的上侧。 UV反射部反射从发光元件芯片发出的紫外线。
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公开(公告)号：KR101045202B1
公开(公告)日：2011-06-30
申请号：KR1020030072499
申请日：2003-10-17
Applicant: 삼성전자주식회사
CPC classification number: B82Y20/00 , H01S5/02 , H01S5/2009 , H01S5/3072 , H01S5/34333 , H01S2301/173 , H01S2301/176 , H01S2304/00
Abstract: III-V 족 GaN 계 화합물 반도체에 관해 개시된다. 개시된 반도체는: 다중양자우물에 의한 활성성층과 p-형 GaN 계 화합물 반도체층의 사이에 활성층에 접촉되는 AlGaN에 의한 확산방지층(diffusion blocking layer)과 상기 p-형 GaN 계 화합물 반도체층에 접촉되는 InGaN에 의한 희생층이 마련되는 구조를 가진다.
GaN, 확산, 방지, 보호, 희생-
公开(公告)号：KR1020070122078A
公开(公告)日：2007-12-28
申请号：KR1020060057089
申请日：2006-06-23
Applicant: 삼성전자주식회사
IPC: H01L33/06
CPC classification number: H01S5/34333 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3072
Abstract: A nitride semiconductor light emitting device is provided to improve light emitting efficiency by forming a diffusion preventing layer between a quantum well layer and at least one of barrier layers. An active layer(55) includes a quantum well layer(16), barrier layers(12) formed on and below the quantum well layer, and diffusion preventing layers(14) formed between the quantum well layer and the barrier layers to prevent diffusion of indium from the barrier layers. The quantum well layer has a first surface and a second surface which are opposite to each other. The active layer has a multi-quantum well structure including a desired number of structures each composed of the quantum well layer, the diffusion preventing layers and the barrier layer between the diffusion preventing layers.
Abstract translation: 提供氮化物半导体发光器件，以通过在量子阱层和至少一个势垒层之间形成扩散防止层来提高发光效率。 活性层（55）包括量子阱层（16），在量子阱层上形成的势垒层（12）和形成在量子阱层与阻挡层之间的防扩散层（14），以防止扩散 铟从阻挡层。 量子阱层具有彼此相对的第一表面和第二表面。 有源层具有多量子阱结构，其包括由量子阱层，扩散防止层和防扩散层之间的阻挡层组成的所需数量的结构。
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公开(公告)号：KR1020070082382A
公开(公告)日：2007-08-21
申请号：KR1020060015154
申请日：2006-02-16
Applicant: 삼성전자주식회사
IPC: H01L21/20 , H01S3/0941
CPC classification number: C30B7/005 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/0265
Abstract: A PENDEO epitaxial growth substrate and a forming method thereof are provided to improve the reliability and to enhance the throughput by preventing the generation of contamination due to an air gap using a barrier layer capable of blocking a predetermined path for solution. A PENDEO epitaxial growth substrate includes a substrate(30), a plurality of pattern regions and one or more barrier layers. The plurality of pattern regions(31a,31b) are formed on the substrate in a first direction. The barrier layers(33) are used for contacting the pattern region. The barrier layers are formed on the substrate in a second direction. The first and second directions are orthogonal to each other. The substrate is made of one selected from a group consisting of sapphire, silicon carbide, silicon or ZnO.
Abstract translation: 提供了一种PENDEO外延生长衬底及其形成方法，以通过防止使用能够阻挡预定路径的阻挡层产生由气隙导致的污染而产生污染的可靠性和提高吞吐量。 PENDEO外延生长衬底包括衬底（30），多个图案区域和一个或多个势垒层。 多个图案区域（31a，31b）沿第一方向形成在基板上。 阻挡层（33）用于与图案区域接触。 阻挡层在第二方向上形成在基板上。 第一和第二方向彼此正交。 衬底由选自由蓝宝石，碳化硅，硅或ZnO组成的组中的一种制成。
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Patent Agency Ranking
公开(公告)号：KR100738079B1
公开(公告)日：2007-07-12
申请号：KR1020050098724
申请日：2005-10-19
Applicant: 삼성전자주식회사
IPC: H01S5/30
CPC classification number: H01S5/22 , B82Y20/00 , H01S5/0213 , H01S5/16 , H01S5/2201 , H01S5/34333 , H01S2304/12
Abstract: 공진미러면(cavity mirror plane)에서의 광학적 흡수가 최소화되고 공진미러면의 표면거칠기가 향상된 구조를 갖는 질화물계 반도체 레이저 다이오드의 제조방법이 개시된다. 본 발명에 따른 질화물계 반도체 레이저 다이오드의 제조방법은, (0001) GaN 기판면 위에 상호 레이저 공진길이만큼의 이격거리를 유지하는 적어도 두 개의 마스크를 방향의 스트라이프 패턴으로 형성하는 단계, 상기 마스크 사이의 GaN 기판면 위에 n-GaN층을 성장시킴으로써, 상기 n-GaN층의 (1-100)면측 양단부가 타영역 보다 상대적으로 두껍게 성장되도록 하는 단계, 상기 n-GaN층 위에 순차적으로 n-클래드층과 활성층 및 p-클래드층을 적층함으로써, 상기 활성층으로부터 발생된 레이저광이 상기 활성층과 측방향으로 얼라인되게 배치된 n-클래드층 영역을 통과하여 발진하는 측면발광 레이저공진구조체를 형성하는 단계 및 상기 레이저공진구조체의 (1-100)면측을 에칭하여 공진미러면을 형성하는 단계를 포함한다.
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公开(公告)号：KR1020060110700A
公开(公告)日：2006-10-25
申请号：KR1020050033197
申请日：2005-04-21
Applicant: 삼성전자주식회사
IPC: H01L21/20
CPC classification number: H01L29/2003 , B82Y20/00 , H01L29/045 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0211 , H01S5/2231 , H01S5/34333
Abstract: A gallium-nitride-based compound semiconductor device is provided to improve surface morphology and to prevent hillock by tilting a surface of an AlxInyGa1-x-yN substrate with off angle. A surface of an AlxInyGa1-x-yN substrate(0
Abstract translation: 提供了一种氮化镓基化合物半导体器件，用于通过倾斜Al x In y Ga 1-x-y N衬底的表面来改善表面形态并防止小丘。 AlxInyGa1-x-yN衬底的表面（0 <= x <= 1,0,0 <= y <= 1，0 <= x + y <= 1）（11）在偏角较大的表面上倾斜 比零度小于一度。 在Al x In y Ga 1-x-y N衬底的表面上生长氮化镓基化合物半导体层（20）。 氮化镓系化合物半导体层包括n型包覆层（21），n型导光层（22），多量子阱活性层（23），p型导光层（24） ）和p型覆层（25）。
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公开(公告)号：KR1020050037084A
公开(公告)日：2005-04-21
申请号：KR1020030072499
申请日：2003-10-17
Applicant: 삼성전자주식회사
CPC classification number: B82Y20/00 , H01S5/02 , H01S5/2009 , H01S5/3072 , H01S5/34333 , H01S2301/173 , H01S2301/176 , H01S2304/00
Abstract: III-V 족 GaN 계 화합물 반도체에 관해 개시된다. 개시된 반도체는: 다중양자우물에 의한 활성성층과 p-형 GaN 계 화합물 반도체층의 사이에 활성층에 접촉되는 AlGaN에 의한 확산방지층(diffusion blocking layer)과 상기 p-형 GaN 계 화합물 반도체층에 접촉되는 InGaN에 의한 희생층이 마련되는 구조를 가진다.
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公开(公告)号：KR101881063B1
公开(公告)日：2018-07-25
申请号：KR1020110132956
申请日：2011-12-12
Applicant: 삼성전자주식회사
IPC: H01L21/60
CPC classification number: H01L21/76892 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05023 , H01L2224/05171 , H01L2224/05568 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/1132 , H01L2224/11849 , H01L2224/13006 , H01L2224/13007 , H01L2224/13012 , H01L2224/13016 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2924/00014 , H01L2924/00012 , H01L2224/05552
Abstract: 범프의제조방법이개시된다. 본발명의실시예에따른범프의제조방법은반도체소자에구비된전극패드상에범프를형성하는단계및 범프가형성된반도체소자를산소분위기에서리플로우(reflow)하여범프의형태를제어하는단계를포함한다.
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公开(公告)号：KR1020130042154A
公开(公告)日：2013-04-26
申请号：KR1020110106294
申请日：2011-10-18
Applicant: 삼성전자주식회사
CPC classification number: H01L33/62 , H01L33/44 , H01L2224/16225
Abstract: PURPOSE: A light emitting device and a manufacturing method thereof, and a light emitting device module using the same are provided to improve heat dissipation efficiency using a first and a second bump. CONSTITUTION: A first electrode(130) is formed in the exposed region of a first semiconductor layer(121). A second electrode(140) is formed in a second semiconductor layer(123). A passivation layer exposes the first region of the first electrode and the first region of the second electrode. A first bump is formed in the first region including the first electrode. A second bump is formed in the second region including the second electrode.
Abstract translation: 目的：提供发光器件及其制造方法以及使用其的发光器件模块，以使用第一和第二凸块提高散热效率。 构成：第一电极（130）形成在第一半导体层（121）的暴露区域中。 第二电极（140）形成在第二半导体层（123）中。 钝化层暴露第一电极的第一区域和第二电极的第一区域。 在包括第一电极的第一区域中形成第一凸块。 在包括第二电极的第二区域中形成第二凸块。
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