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公开(公告)号：KR101719636B1
公开(公告)日：2017-04-05
申请号：KR1020110008990
申请日：2011-01-28
Applicant: 삼성전자주식회사
IPC: H01L23/31 , H01L21/56 , H01L25/065 , H01L25/10 , H01L25/07
CPC classification number: H01L25/0657 , H01L21/563 , H01L23/3128 , H01L23/3135 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/97 , H01L25/0655 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16235 , H01L2224/16265 , H01L2224/17181 , H01L2224/32145 , H01L2224/32225 , H01L2224/45139 , H01L2224/48227 , H01L2224/73204 , H01L2224/73207 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06586 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2225/1094 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/81 , H01L2224/83
Abstract: 반도체장치및 그제조방법이제공된다. 반도체장치는제1 반도체기판을포함하는제1 반도체칩, 상기제1 반도체칩 하부에배치된제2 반도체기판, 상기제1 반도체칩의측벽을덮는언더필부, 및상기언더필부의측벽을덮으며, 상기언더필부에의해상기제1 반도체칩으로부터이격되어있는몰딩부를포함한다.
Abstract translation: 提供了一种半导体器件及其制造方法。 该半导体器件包括：第一半导体芯片，包括第一半导体衬底，设置在第一半导体芯片下方的第二半导体衬底，覆盖第一半导体芯片的侧壁的底部填充部分， 以及通过底部填充部分与第一半导体芯片间隔开的模制部分。
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公开(公告)号：KR1020160105184A
公开(公告)日：2016-09-06
申请号：KR1020150028532
申请日：2015-02-27
Applicant: 삼성전자주식회사
IPC: G06F3/01 , G06F3/048 , G06F3/0488 , G06F3/0346
CPC classification number: H04M1/72569 , H04M1/22 , H04M9/082 , H04M19/048 , G06F3/04883 , G06F3/0346
Abstract: 본발명의다양한실시예에따른기능실행방법은디스플레이를포함하는전자장치에서수행되고, 상기전자장치가지정된상태인지를인식하는동작, 상기지정된상태에서, 지정된이벤트의발생을인식하는동작, 상기이벤트가발생한경우, 상기디스플레이의적어도일부를통해상기이벤트와연관된색상을출력하는동작, 상기색상을출력하는중 지정된사용자입력의발생을확인하는동작및 상기사용자입력이발생한경우, 상기사용자입력과연관된기능을실행하는동작을포함할수 있다. 이외에도명세서를통해파악되는다양한실시예가가능하다.
Abstract translation: 本发明涉及一种用于执行功能的方法和支持该功能的电子设备，当用户不能或几乎不能识别整个显示器时，能够通过通过显示器的部分区域输出的颜色来识别事件的类型 显示。 用于执行根据本发明的各种实施例的功能的方法在包括显示器的电子设备中执行，并且包括以下操作：识别电子设备是否处于指定状态; 检测指定状态下的指定事件; 当所述事件发生时，通过所述显示器的至少一部分输出与所述事件相关联的颜色; 在输出颜色的同时检测指定的用户输入; 并且当用户输入发生时执行与用户输入相关联的功能。 本公开的各种实施例是可能的。
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Patent Agency Ranking
公开(公告)号：KR1020130036591A
公开(公告)日：2013-04-12
申请号：KR1020110100767
申请日：2011-10-04
Applicant: 삼성전자주식회사
CPC classification number: H01L25/50 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L23/3135 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L24/19 , H01L24/20 , H01L24/73 , H01L24/81 , H01L24/96 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L2224/0401 , H01L2224/04105 , H01L2224/0557 , H01L2224/12105 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06548 , H01L2225/06562 , H01L2225/06565 , H01L2225/06586 , H01L2924/00014 , H01L2924/01029 , H01L2924/01327 , H01L2924/07802 , H01L2924/10253 , H01L2924/12042 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/18161 , H01L2924/19104 , H01L2924/19105 , H01L2924/30107 , H01L2924/3511 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/05552
Abstract: PURPOSE: A semiconductor package and a manufacturing method thereof are provided to improve processing yield by forming an inner sealing member inside an inner package and an outer sealing member outside the inner package with different modulus materials. CONSTITUTION: A semiconductor chip is sealed by an inner sealing member. An inner package(1000c) includes four semiconductor chips(100-1,100-2,100-3,100-4) laminated on an inner substrate(200). The inner package is mounted on an outer substrate(2000). An outer sealing member(3000) seals the inner package. The modulus of the inner sealing member is smaller than the modulus of the outer sealing member.
Abstract translation: 目的：提供一种半导体封装及其制造方法，以通过在内部封装内部形成内部密封构件和外部密封构件而以不同的模量材料形式提高加工率。 构成：半导体芯片由内密封件密封。 内包装（1000c）包括层叠在内基板（200）上的四个半导体芯片（100-1,100-2,100-3,100-4）。 内包装安装在外基板（2000）上。 外密封件（3000）密封内包装。 内密封构件的模量小于外密封构件的模量。
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公开(公告)号：KR100834837B1
公开(公告)日：2008-06-03
申请号：KR1020060137510
申请日：2006-12-29
Applicant: 삼성전자주식회사
CPC classification number: H01L21/67132 , H01L21/6831 , H01L24/27 , H01L24/29 , H01L24/75 , H01L24/83 , H01L2224/75735 , H01L2224/83191 , H01L2924/14 , H01L2924/00
Abstract: A semiconductor die pickup apparatus and a semiconductor die pickup method thereof are provided to separate effectively a semiconductor die from a base film of a wafer attaching tape without causing deformation or cracks in a semiconductor die. A wafer attaching tape(306) is attached on a rear surface of a wafer(308) in order to fix a sawed semiconductor die. The wafer attaching tape includes a magnetic attaching film(304) having magnetic force. A collet unit(316) has an electromagnet structure in order to generate attraction between the wafer attaching tape and the magnetic attaching film while electric power is applied thereof. A transfer head unit(314) transfers the sawed semiconductor die by using driving force of a driving unit. The sawed semiconductor die is picked up by the collet part.
Abstract translation: 提供了一种半导体芯片拾取装置及其半导体芯片拾取方法，用于将半导体管芯与晶片安装带的基膜有效分开，而不会导致半导体管芯中的变形或裂纹。 将晶片安装带（306）安装在晶片（308）的后表面上，以固定锯切的半导体管芯。 晶片安装带包括具有磁力的磁性附着膜（304）。 夹套单元（316）具有电磁体结构，以便在施加电力的同时在晶片安装带和磁性附着膜之间产生吸引力。 传送头单元（314）通过使用驱动单元的驱动力传送锯切的半导体管芯。 被锯的半导体芯片由夹头部分拾取。
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公开(公告)号：KR100825798B1
公开(公告)日：2008-04-28
申请号：KR1020060138769
申请日：2006-12-29
Applicant: 삼성전자주식회사
IPC: H01L21/301
CPC classification number: H01L21/6836 , B23K26/042 , B23K26/18 , B23K26/40 , B23K2203/50 , H01L21/02035 , H01L21/78 , H01L2221/68327
Abstract: A dicing method is provided to enhance a yield by reducing damage of a semiconductor chip and suppressing defects such as a pickup error. A plurality of semiconductor device regions(103) are formed on an upper surface of a substrate(101). The semiconductor device regions are separated from each other by using a scribe lane(105). A lower surface of a wafer(110) is attached to a firs tape. The first tape includes a base film, a first adhesion layer formed on the base film, and a second adhesion layer formed on the first adhesion layer. The second adhesion layer is attached on a lower surface of the wafer. A dicing process is performed by irradiating laser beam onto the lower surface of the substrate along the scribe lane.
Abstract translation: 提供了一种切割方法，以通过减少半导体芯片的损坏并抑制诸如拾取错误的缺陷来提高产量。 在衬底（101）的上表面上形成多个半导体器件区域（103）。 半导体器件区域通过使用划线（105）彼此分离。 晶片（110）的下表面附接到第一条带。 第一带包括基膜，形成在基膜上的第一粘合层和形成在第一粘合层上的第二粘合层。 第二粘附层附着在晶片的下表面上。 通过沿着划线将激光束照射到基板的下表面上进行切割处理。
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公开(公告)号：KR100817059B1
公开(公告)日：2008-03-27
申请号：KR1020060087456
申请日：2006-09-11
Applicant: 삼성전자주식회사
IPC: H01L21/301 , H01L21/78
CPC classification number: H01L21/78 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: 반도체 패키지의 제조방법을 제공한다. 먼저, 반도체 칩들 및 상기 반도체 칩들 사이에 위치하는 스크라이브 레인을 구비하는 반도체 기판을 제공한다. 상기 스크라이브 레인 내에 트렌치를 형성한다. 상기 트렌치 내에 광분해성 고분자를 충전한다. 상기 광분해성 고분자가 충전된 기판의 배면을 그라인딩한다. 상기 기판의 전면(front surface)에 광을 조사하여 상기 광분해성 고분자를 분해시킨다. 따라서, 반도체 기판을 백 그라인딩한 후 추가적인 절단 공정을 수행하지 않더라도 상기 반도체 칩들을 용이하게 분리할 수 있다. 그 결과, 백 그라인딩에 의해 얇아진 반도체 칩의 에지에 칩핑 또는 크랙이 발생하는 것을 막을 수 있다.
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公开(公告)号：KR1020080023497A
公开(公告)日：2008-03-14
申请号：KR1020060087456
申请日：2006-09-11
Applicant: 삼성전자주식회사
IPC: H01L21/301 , H01L21/78
CPC classification number: H01L21/78 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: A method for fabricating a thin semiconductor package is provided to obtain a slim semiconductor chip with high intensity, by degrading photodegradable polymers by projecting light on a surface of a semiconductor substrate for separating semiconductor chips, thereby protecting an edge of the semiconductor chip from chipping or cracks, without performing an additional sawing process. A method for fabricating a thin semiconductor package comprises the steps of: preparing a semiconductor substrate(10) having a plurality of semiconductor chips(C), and a scribe lane disposed between the semiconductor chips; forming a trench within the scribe lane; disposing a mask on the substrate for exposing the trench; filling photodegradable polymers within the trench exposed by the mask; removing the mask for exposing the front surface of the substrate; attaching a protective tape on the exposed front surface; back-grinding the back side of the substrate filled with the photodegradable polymers; attaching a mounting tape(17) onto the grinded back side; degrading the photodegradable polymers by projecting light(L) on the front surface of the substrate; and washing the substrate after projecting light.
Abstract translation: 提供一种制造薄半导体封装的方法，以通过在半导体衬底的表面上投射光来降解可光降解的聚合物来分离半导体芯片，从而保护半导体芯片的边缘免受削弱或削弱，从而获得高强度的超薄半导体芯片 裂缝，而不执行额外的锯切过程。 一种制造薄半导体封装的方法，包括以下步骤：制备具有多个半导体芯片（C）的半导体衬底（10）和设置在半导体芯片之间的划线; 在划线内形成沟槽; 在衬底上设置掩模以暴露沟槽; 在由掩模暴露的沟槽内填充可光降解的聚合物; 去除掩模以暴露衬底的前表面; 在暴露的正面上贴上保护胶带; 背面研磨填充有可光降解聚合物的基材的背面; 将安装带（17）附接到研磨的背面上; 通过在基板的前表面上投射光（L）来降解光可降解聚合物; 并在投影光后洗涤基板。
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