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公开(公告)号：KR1020130081458A
公开(公告)日：2013-07-17
申请号：KR1020120002446
申请日：2012-01-09
Applicant: 삼성전자주식회사
IPC: H04N21/462
CPC classification number: G06T3/40 , G06F3/048 , G06F3/0481 , G06F2203/04806 , G06T11/60 , G09G2340/0407 , G09G2340/0414
Abstract: PURPOSE: An apparatus for scaling layout of an application program in an image display device and a method thereof are provided to provide optimum application program layout to a user, by scaling the layout of the application program by considering distance from the user. CONSTITUTION: When layout of an application program is configured, an image display device checks reference pixels per degree (PPD) (101,103). The image display device checks PPD of the image display device (105). The image display device generates scaling variables by considering the reference PPD and the PPD of the image display device (107). The image display device configures the layout of the application program by considering the generated scaling variables (109). [Reference numerals] (101) Is a layout configured?; (103) Confirm a reference PPD; (105) Confirm a PPD of an image display device; (107) Generate scaling variables by considering a reference PPD and a PPD of an image display device; (109) Configure a layout by considering scaling variables; (AA) Start; (BB) No; (CC) Yes; (DD) End
Abstract translation: 目的：提供一种用于缩放图像显示装置中的应用程序的布局的装置及其方法，以通过考虑与用户的距离来缩放应用程序的布局来向用户提供最佳的应用程序布局。 构成：当配置应用程序的布局时，图像显示设备将检查每度的参考像素（PPD）（101,103）。 图像显示装置检查图像显示装置（105）的PPD。 图像显示装置通过考虑图像显示装置（107）的参考PPD和PPD来生成缩放变量。 图像显示装置通过考虑所生成的比例变量（109）来配置应用程序的布局。 （附图标记）（101）是布局配置的; （103）确认参考PPD; （105）确认图像显示装置的PPD; （107）通过考虑图像显示装置的参考PPD和PPD来生成缩放变量; （109）通过考虑缩放变量来配置布局; （AA）开始; （BB）否 （CC）是; （DD）结束
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公开(公告)号：KR1020100080701A
公开(公告)日：2010-07-12
申请号：KR1020090000111
申请日：2009-01-02
Applicant: 삼성전자주식회사
IPC: G06F9/44
CPC classification number: G06F9/4843 , G06F9/445 , G06F9/485 , G06F2209/482
Abstract: PURPOSE: An operating method of a mobile application model is provided to operate mobile applications by an independent process unit. CONSTITUTION: When an address book list view is displayed, a person receiving a message is selected and confirmation is inputted(203). A message writing view in which message contents are written is displayed on a display unit. A code is read from a memory to perform an address list. A code for performing a standby mode and a code for writing a message are loaded in the memory. If a message sending application program is selected(204) when the message writing view is displayed, the message is transmitted.
Abstract translation: 目的：提供移动应用模型的操作方法，以通过独立的处理单元来操作移动应用。 构成：当显示地址簿列表视图时，选择接收到消息的人员并输入确认（203）。 写入消息内容的消息写入视图显示在显示单元上。 从存储器读取代码以执行地址列表。 用于执行待机模式的代码和用于写入消息的代码被加载到存储器中。 如果在显示消息写入视图时选择了消息发送应用程序（204），则发送消息。
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公开(公告)号：KR100858082B1
公开(公告)日：2008-09-10
申请号：KR1020060101047
申请日：2006-10-17
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/302
CPC classification number: H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1675
Abstract: 니켈 산화물층의 식각방법과 니켈 산화물층을 포함하는 저항성 메모리 소자의 스토리지 노드의 제조방법에 관하여 개시된다. 개시된 니켈 산화물층의 식각방법은: 상부에 니켈 산화물층이 형성된 기판을 준비하는 단계; 상기 니켈 산화물층의 소정 영역 상에 마스크 패턴을 형성하는 단계; 메인 가스와 첨가 가스가 소정의 혼합비로 혼합된 식각가스로부터 발생되는 플라즈마를 이용하여 상기 마스크 패턴 둘레의 상기 니켈 산화물층을 제거하는 단계; 및 상기 마스크 패턴을 제거하는 단계를 포함하는 것을 특징으로 한다.
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公开(公告)号：KR101685529B1
公开(公告)日：2016-12-12
申请号：KR1020100080888
申请日：2010-08-20
Applicant: 삼성전자주식회사
IPC: G06F3/0482 , G06F3/0485 , G06F3/0484 , G06F3/14
CPC classification number: G06F3/0488 , G06F3/0482 , G09G5/14 , G09G2320/0686 , G09G2340/045
Abstract: 디스플레이영역에서적어도하나의영역을생성하는단계; 및생성된영역에적어도하나의메뉴아이템을배치하는단계를포함하는메뉴화면구성방법, 유저디바이스, 및저장매체가개시되어있다.
Abstract translation: 提供了一种配置菜单屏幕的方法。 该方法包括在显示区域内生成至少一个区域; 并且在所生成的区域中排列至少一个菜单项，用于执行该方法的用户设备，以及在其上记录有用于执行该方法的程序的计算机可读存储介质。
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Patent Agency Ranking
公开(公告)号：KR101678669B1
公开(公告)日：2016-11-22
申请号：KR1020090000116
申请日：2009-01-02
Applicant: 삼성전자주식회사
IPC: H01L21/336 , H01L29/786
Abstract: 단결정실리콘및 이를포함하는박막트랜지스터의제조방법이개시된다. 개시된단결정실리콘형성방법은실리콘층측부에사이드월을형성하고, 그상부에장벽층을형성한뒤, 레이저에의한열처리공정을실시함으로써, 실리콘층을측면단결정시킬수 있다.
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公开(公告)号：KR101350979B1
公开(公告)日：2014-01-14
申请号：KR1020070046200
申请日：2007-05-11
Applicant: 삼성전자주식회사
IPC: H01L27/105
CPC classification number: G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/122 , H01L45/145 , H01L45/146 , H01L45/147
Abstract: 본 발명은 저항성 메모리 소자 및 그 제조 방법에 관한 것이다. 저항성 메모리 소자에 있어서, 하부 전극; 상기 하부 전극 상에 형성되며, 상기 하부 전극을 노출시키는 홀이 형성된 절연층; 상기 홀 내부에 형성된 저항층 및 중간 전극; 상기 중간 전극의 표면 상에 형성된 스위치 구조체; 및 상기 스위치 구조체 상에 형성된 상부 전극;을 포함하는 저항성 메모리 소자를 제공한다.
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公开(公告)号：KR1020120017931A
公开(公告)日：2012-02-29
申请号：KR1020100080888
申请日：2010-08-20
Applicant: 삼성전자주식회사
IPC: G06F3/0482 , G06F3/0485 , G06F3/0484 , G06F3/14
CPC classification number: G06F3/0488 , G06F3/0482 , G09G5/14 , G09G2320/0686 , G09G2340/045 , G06F3/0484 , G06F3/0485 , G06F3/14
Abstract: PURPOSE: A method for forming a menu screen, and an user device and a storing media for implementing the method are provided to form a menu screen based on the preference of a user. CONSTITUTION: At least one region is generated in a display region(S201). At least one menu item is arranged in the generated region(S202). At least one region is generated in the empty region of the display region. At least one region is generated by a multi-touch-based input signal. In the menu item arranging process, a menu item list is activated and at least one menu item, which is selected based on the menu item list, is arranged in the generated region.
Abstract translation: 目的：提供一种用于形成菜单屏幕的方法，以及用于实现该方法的用户设备和存储介质，以基于用户的偏好来形成菜单屏幕。 构成：在显示区域中生成至少一个区域（S201）。 在生成区域中配置至少一个菜单项目（S202）。 在显示区域的空白区域中生成至少一个区域。 通过基于多触摸的输入信号生成至少一个区域。 在菜单项排列处理中，菜单项目列表被激活，并且基于菜单项目列表选择的至少一个菜单项被排列在所生成的区域中。
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公开(公告)号：KR1020080100082A
公开(公告)日：2008-11-14
申请号：KR1020070046200
申请日：2007-05-11
Applicant: 삼성전자주식회사
IPC: H01L27/105
CPC classification number: G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/122 , H01L45/145 , H01L45/146 , H01L45/147
Abstract: The stabilized switching current can be obtained while maintaining the degree of integration of the memory device by providing the resistivity memory device carrying three dimensional structure. The area of the storage node and contact area of the switch can be easily controlled by controlling he aspect ratio of a hole in manufacturing the resistivity memory device. The resistivity memory device comprises a bottom electrode(22); an insulating layer(23) having the hole for exposing the bottom electrode; a resistant layer(24) and the middle electrode(25) formed in the hole; a switch structure(26) formed on the surface of the middle electrode; an upper electrode(27) formed on the switch structure.
Abstract translation: 通过提供携带三维结构的电阻率存储器件，可以在保持存储器件集成度的同时获得稳定的开关电流。 存储节点的面积和开关的接触面积可以通过控制制造电阻率存储器件的孔的纵横比来容易地控制。 电阻率存储器件包括底部电极（22）; 具有用于暴露底部电极的孔的绝缘层（23）; 形成在孔中的电阻层（24）和中间电极（25） 形成在所述中间电极的表面上的开关结构（26） 形成在开关结构上的上电极（27）。
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公开(公告)号：KR1020080064611A
公开(公告)日：2008-07-09
申请号：KR1020070001702
申请日：2007-01-05
Applicant: 삼성전자주식회사
IPC: H01L21/302
CPC classification number: C23G5/00 , H01J37/321 , H01L21/32136 , H01L28/40 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1675
Abstract: An etch method of metal oxide formed on a metal layer is provided to obtain a very clean etch section by effectively removing residual occurring during the etch of the metal oxide. An etch method of metal oxide formed on a metal layer includes: mounting a sample on which a metal layer, a metal oxide layer(22) formed on the metal layer, and photoresist formed on the metal oxide layer in a reaction chamber; etching the metal oxide layer exposed through the photo resist by a inductively coupled plasma process containing Cl2 gas; and etching residual existing in an etch region of the metal oxide layer by an inductively coupled plasma process containing BCl3. The metal layer is formed of noble metal containing Pt, Rh, or Au. The metal oxide layer is formed of NiO, CuO, NbO, TiO, ZrO, ZnO, or IrO.
Abstract translation: 提供了形成在金属层上的金属氧化物的蚀刻方法，以通过有效地去除在金属氧化物的蚀刻过程中发生的残留物来获得非常干净的蚀刻部分。 形成在金属层上的金属氧化物的蚀刻方法包括：在反应室内安装金属层，形成在金属层上的金属氧化物层（22）和在金属氧化物层上形成的光致抗蚀剂的样品; 通过包含Cl 2气体的电感耦合等离子体工艺蚀刻通过光致抗蚀剂暴露的金属氧化物层; 以及通过包含BCl 3的电感耦合等离子体处理蚀刻存在于金属氧化物层的蚀刻区域中的残余物。 金属层由含有Pt，Rh或Au的贵金属形成。 金属氧化物层由NiO，CuO，NbO，TiO，ZrO，ZnO或IrO形成。
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