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公开(公告)号：KR101554032B1
公开(公告)日：2015-09-18
申请号：KR1020130164522
申请日：2013-12-26
Applicant: 삼성전자주식회사
Abstract: 본발명의일 측면은, 제1 도전형반도체로이루어진베이스층과, 상기베이스층상에형성되며, 상기베이스층의일부영역이노출된복수의제1 개구를갖는제1 절연막과, 상기베이스층의노출된영역각각에형성되며, 제1 도전형반도체로이루어진복수의나노코어와, 상기제1 절연막보다높게위치한상기복수의나노코어의표면에형성된활성층과, 상기제1 절연막상에형성되며, 상기복수의나노코어와그 표면에형성된활성층을둘러싸는복수의제2 개구를갖는제2 절연막과, 상기제2 절연막보다높게위치한상기활성층의표면에형성된제2 도전형반도체층을포함하는나노구조반도체발광소자를제공한다.
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公开(公告)号：KR1020120084119A
公开(公告)日：2012-07-27
申请号：KR1020110005462
申请日：2011-01-19
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A nitride semiconductor light emitting device is provided to efficiently prevent optical absorption from silicon by introducing a reflective structure like a DBR(Distributed Bragg Reflection) layer at a lower portion of an active layer. CONSTITUTION: A mask pattern has a DBR layer(15). A multilayer buffer structure(20) is over-grown on a surface of silicon in a lateral direction by using the mask pattern. The multilayer buffer structure includes a nucleation layer and a stress compensation layer(26). The stress compensation layer is located on the nucleation layer and is made of a nitride semiconductor consisting of a material having a larger lattice constant than that of the nucleation layer. A light emitting laminate is formed on the multilayer buffer structure and includes a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer.
Abstract translation: 目的：提供一种氮化物半导体发光器件，用于通过在有源层的下部引入诸如DBR（分布式布拉格反射）层的反射结构来有效地防止硅的光吸收。 构成：掩模图案具有DBR层（15）。 通过使用掩模图案，多层缓冲结构（20）在横向方向上在硅的表面上过度生长。 多层缓冲结构包括成核层和应力补偿层（26）。 应力补偿层位于成核层上，由具有比成核层的晶格常数大的材料构成的氮化物半导体构成。 在多层缓冲结构上形成发光层叠体，并且包括第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。
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公开(公告)号：KR1020120079670A
公开(公告)日：2012-07-13
申请号：KR1020110000989
申请日：2011-01-05
Applicant: 삼성전자주식회사
CPC classification number: H01L33/12 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L2933/0008
Abstract: PURPOSE: A method of fabricating a nitride semiconductor light emitting device is provided to have excellent bond strength even in low pressure by having relatively high surface roughness compared to a Si-Al substrate. CONSTITUTION: A silicon substrate including a nitride buffer structure is prepared. A light emitting laminate(65) is formed by successively growing a first conductivity type nitride semiconductor layer(65a), an active layer(65b), and a second conductivity type nitride semiconductor layer(65c). Provided is a support substrate on the light emitting laminate. The silicon substrate is removed from the light emitting laminate.
Abstract translation: 目的：提供一种制造氮化物半导体发光器件的方法，即使在与Si-Al衬底相比具有相对高的表面粗糙度的情况下，即使在低压下也具有优异的接合强度。 构成：制备包括氮化物缓冲结构的硅衬底。 通过依次生长第一导电型氮化物半导体层（65a），有源层（65b）和第二导电型氮化物半导体层（65c）来形成发光层压板（65）。 提供了在发光层压板上的支撑基板。 从发光层压板去除硅衬底。
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公开(公告)号：KR1020120065606A
公开(公告)日：2012-06-21
申请号：KR1020100126818
申请日：2010-12-13
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A nitride epitaxial wafer for a light emitting device, a manufacturing method thereof, and a method for manufacturing a nitride light emitting device are provided to efficiently discharge heat by forming an uneven part on a substrate. CONSTITUTION: A nitride epitaxial layer(30) is formed on a silicon wafer(10) and includes a first conductive nitride semiconductor layer(32), an active layer(35), and a second conductive nitride semiconductor layer(37). The nitride epitaxial layer includes an inner region(30A) and an edge region(30B). The crack distribution density of the inner region is larger than the crack distribution density of the edge region. The edge region of the nitride epitaxial layer is removed.
Abstract translation: 目的：提供一种用于发光器件的氮化物外延晶片，其制造方法和用于制造氮化物发光器件的方法，以通过在衬底上形成不均匀部分来有效地散热。 构成：氮化物外延层（30）形成在硅晶片（10）上，并包括第一导电氮化物半导体层（32），有源层（35）和第二导电氮化物半导体层（37）。 氮化物外延层包括内部区域（30A）和边缘区域（30B）。 内部区域的裂纹分布密度大于边缘区域的裂纹分布密度。 去除氮化物外延层的边缘区域。
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公开(公告)号：KR1020120029276A
公开(公告)日：2012-03-26
申请号：KR1020100091272
申请日：2010-09-16
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A method for manufacturing a nitride mono-crystal, and a nitride semiconductor light emitting diode using the same are provided to control lattice defects created due to thermal expansion and lattice mismatch by forming a mask layer in the inner side of a semiconductor layer by using grapheme. CONSTITUTION: A first electrical conduction semiconductor layer(22) is formed on a substrate(21). The first electrical conduction semiconductor layer comprises a nitride base layer(22A) and a nitride single crystal layer(22B). An active layer(23) is formed on the first electrical conduction semiconductor layer. A second electrical conduction semiconductor layer(24) is formed on the active layer. A mask layer(25) is formed the nitride base layer and the nitride single crystal layer.
Abstract translation: 目的：提供一种制造氮化物单晶的方法和使用其的氮化物半导体发光二极管，以通过在半导体层的内侧形成掩模层来控制由于热膨胀和晶格失配而产生的晶格缺陷， 使用图形。 构成：在基板（21）上形成第一导电半导体层（22）。 第一导电半导体层包括氮化物基底层（22A）和氮化物单晶层（22B）。 在第一导电半导体层上形成有源层（23）。 在有源层上形成第二导电半导体层（24）。 掩模层（25）形成为氮化物基底层和氮化物单晶层。
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Patent Agency Ranking
公开(公告)号：KR102227770B1
公开(公告)日：2021-03-16
申请号：KR1020140114199
申请日：2014-08-29
Applicant: 삼성전자주식회사
IPC: H01L33/20
Abstract: 본발명은제1 영역과제2 영역을가지며제1 도전형반도체층으로이루어진베이스층; 상기베이스층의상면에배치되며, 제1 도전형반도체로이루어진복수의나노코어, 상기복수의나노코어상에순차적으로배치된활성층및 제2 도전형반도체층을갖는복수의나노발광구조물; 상기제2 도전형반도체층에전기적으로접속되도록상기복수의나노발광구조물의표면에배치된콘택전극; 상기베이스층과전기적으로접속된제1 전극; 및상기제2 영역에배치된복수의나노발광구조물중 적어도일부의나노발광구조물의표면에배치된상기콘택전극을덮도록배치되는제2 전극을포함하며, 상기복수의나노발광구조물중 상기제2 영역에배치된나노발광구조물은상기제1 영역에배치된나노발광구조물과상이한형상을가진나노구조반도체발광소자를제공한다.
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