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公开(公告)号：KR100849634B1
公开(公告)日：2008-08-01
申请号：KR1020070014462
申请日：2007-02-12
Applicant: 삼성전자주식회사
IPC: G01N27/411 , G01N21/00 , G01N21/59 , B82Y20/00
Abstract: A method for detecting a metal concentration is provided to detect a concentration of metal contaminants contained in the air inside a space such as a clean room. A method for detecting a metal concentration comprises the steps of: dissolving a metal in the air in a solvent by extracting air from a space and supplying it to the solvent; irradiating light to mixed liquid prepared by mixing the solution containing the dissolved metal with a reagent chemically combined with the metal; and detecting the metal concentration by using a light absorption degree of the mixed liquid.
Abstract translation: 提供了用于检测金属浓度的方法，以检测包含在诸如洁净室的空间内的空气中的金属污染物的浓度。 检测金属浓度的方法包括以下步骤：通过从空间中提取空气并将其供给溶剂将金属溶解在空气中; 向通过将含有溶解金属的溶液与与金属化学结合的试剂混合而制备的混合液体照射光; 并通过使用混合液的光吸收度来检测金属浓度。
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公开(公告)号：KR100785437B1
公开(公告)日：2007-12-13
申请号：KR1020060126927
申请日：2006-12-13
Applicant: 삼성전자주식회사
IPC: H01L21/66 , H01L21/304
CPC classification number: G01N31/22 , G01N2021/7783
Abstract: A metal detecting reagent and a method for monitoring a cleaning liquid using the same are provided to detect metal ions easily even at a low concentration by forming a complex compound easily because of a superior reactivity about the metal ions. A reagent including an ammonium salt and a chelate agent for detecting a metal is prepared(S10). A mixed solution is manufactured by adding the reagent for detecting a metal to a cleaning liquid(S20). A metal ion is detected by measuring an absorbance of the mixed solution(S30), using maximum absorbance in the wavelength range of 560 nm to 650 nm.
Abstract translation: 提供金属检测试剂和使用该金属检测试剂的清洗液的监测方法，通过由于对金属离子具有优异的反应性而容易地形成络合物，从而容易地以低浓度容易地检测金属离子。 制备包含用于检测金属的铵盐和螯合剂的试剂（S10）。 通过将金属检测用试剂添加到清洗液中来制造混合溶液（S20）。 通过使用在560nm至650nm的波长范围内的最大吸光度，通过测量混合溶液的吸光度（S30）来检测金属离子。
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公开(公告)号：KR101762177B1
公开(公告)日：2017-07-27
申请号：KR1020100130001
申请日：2010-12-17
Applicant: 삼성전자주식회사
CPC classification number: H01L29/2003 , H01L21/02378 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/02647
Abstract: 반도체소자및 반도체소자제조방법이개시된다. 개시된반도체소자는예비시드층과핵생성층을포함하고, 상기예비시드층이예비시딩을위한제1물질과마스킹을위한제2물질을포함하여인장응력을감소키신다.
Abstract translation: 公开了一种半导体器件和制造半导体器件的方法。 所公开的半导体器件被置于降低的拉伸应力初步密钥种子层，其包括：预种子层和所述成核层包括用于所述第一材料的第二材料和用于预研磨过程中屏蔽。
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公开(公告)号：KR101692410B1
公开(公告)日：2017-01-03
申请号：KR1020100071976
申请日：2010-07-26
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/382 , H01L33/405 , H01L2933/0016
Abstract: 발광소자및 이의제조방법이개시된다. 개시된발광소자는제1형반도체층; 제2형반도체층; 상기제1형반도체층과제2형반도체층사이에형성된활성층; 상기제1형반도체층위에마련된것으로, 복수층으로구성되고, 상기활성층에서생성된광이외부로출사되게하는출사패턴이구비된출사패턴층;을포함한다.
Abstract translation: 示例性实施例涉及发光器件（LED）及其制造方法。 LED包括第一半导体层; 第二半导体层; 形成在所述第一和第二半导体层之间的有源层; 以及在所述第一半导体层上包括多层的发光图案层，所述发光图案包括用于从所述有源层产生的外部发射光的发射图案。
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公开(公告)号：KR1020120004159A
公开(公告)日：2012-01-12
申请号：KR1020100064872
申请日：2010-07-06
Applicant: 삼성전자주식회사
CPC classification number: H01L21/02658 , H01L21/0237 , H01L21/0242 , H01L21/02494 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/0079 , H01L33/12 , H01S5/005 , H01S5/0207 , H01S5/32341
Abstract: PURPOSE: A substrate structure and a manufacturing method thereof are provided to reduce the failure factor generating in a manufacturing process by pattering a buffer layer to grow a semiconductor film to be separated into a chip unit. CONSTITUTION: A plurality of protrusions(112) is formed in one side of a substrate(110). A plurality of buffer layers(130) is formed on a plurality of protrusions. A semiconductor layer(150) is formed on the buffer layer. A plurality of buffer layers is patterned into the form including a plurality of holes(h). A plurality of holes is formed to form an undercut region(uc) between protrusions.
Abstract translation: 目的：提供一种衬底结构及其制造方法，以通过对缓冲层进行图案化以使半导体膜分离成芯片单元来减少在制造工艺中产生的故障因素。 构成：在基板（110）的一侧形成有多个突起（112）。 多个缓冲层（130）形成在多个突起上。 半导体层（150）形成在缓冲层上。 将多个缓冲层图案化成包括多个孔（h）的形式。 形成多个孔，以在突起之间形成底切区域（uc）。
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Patent Agency Ranking
公开(公告)号：KR1020110123118A
公开(公告)日：2011-11-14
申请号：KR1020100042589
申请日：2010-05-06
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0025 , H01L27/156 , H01L33/32 , H01L33/38 , H01L33/42
Abstract: PURPOSE: A vertical type light emitting device which includes a patterned light emitting part is provided to arrange an electrode on a region eliminated by patterning, thereby reducing light emitting loss due to the electrode. CONSTITUTION: A first electrode layer(120) is arranged on a substrate(110). A bonding metal layer(112) is arranged between the substrate and first electrode layer. A patterned third group nitride semiconductor layer(130) is arranged on the first electrode layer. A semiconductor layer comprises a semiconductor layer(131), an active layer(132), and a second semiconductor layer(133). A transparent electrode(150) is arranged as a flat shape on the semiconductor layer. A second electrode(160) is arranged on the transparent electrode.
Abstract translation: 目的：提供一种包括图案化发光部分的垂直型发光器件，用于通过图案化将电极排列在消除的区域上，从而减少由于电极引起的发光损失。 构成：第一电极层（120）布置在衬底（110）上。 在基板和第一电极层之间布置有接合金属层（112）。 图案化的第三组氮化物半导体层（130）布置在第一电极层上。 半导体层包括半导体层（131），有源层（132）和第二半导体层（133）。 透明电极（150）在半导体层上被设置为平坦的形状。 第二电极（160）布置在透明电极上。
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公开(公告)号：KR1020170028005A
公开(公告)日：2017-03-13
申请号：KR1020150124728
申请日：2015-09-03
Applicant: 삼성전자주식회사
CPC classification number: H01L29/66803 , H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/2255 , H01L21/2256 , H01L29/0847 , H01L29/66492 , H01L29/66545 , H01L29/7848 , H01L29/785 , H01L29/7851
Abstract: 본발명은반도체장치및 이의제조방법에관한것이다. 상기반도체제조방법은제1 방향으로연장되는액티브핀을형성하고, 액티브핀의장변을따라형성되고, 액티브핀의상부를노출시키는필드절연막을형성하고, 액티브핀 상에제1 방향과교차하는제2 방향으로연장된더미게이트패턴을형성하고, 더미게이트패턴의적어도일측에스페이서를형성하고, 스페이서와더미게이트패턴에의해노출된상기액티브핀을덮는라이너막을형성하고, 라이너막상에, 불순물원소를포함하는불순물공급막을형성하고, 불순물공급막을열처리하여, 액티브핀의상면을따라액티브핀 내에형성되는도핑영역을형성하는것을포함한다.
Abstract translation: 提供半导体器件及其制造方法。 该方法包括形成沿着第一方向延伸的活性翅片; 形成沿有源鳍片的长边暴露活性鳍片的上部的场绝缘层; 在所述活动翅片上形成沿着与所述第一方向相交的第二方向延伸的虚拟栅极图案; 在所述伪栅极图案的至少一侧上形成间隔物; 形成覆盖由所述间隔物和所述伪栅极图案露出的所述有源鳍的衬垫层; 在所述衬垫层上形成含有掺杂剂元素的掺杂剂供给层; 以及通过热处理所述掺杂剂供应层，沿着所述活性鳍片的上表面在所述活性鳍片中形成掺杂区域。
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公开(公告)号：KR1020160144542A
公开(公告)日：2016-12-19
申请号：KR1020150080620
申请日：2015-06-08
Applicant: 삼성전자주식회사
IPC: H01L29/78 , H01L21/3063
CPC classification number: H01L29/41791 , H01L21/31111 , H01L21/31116 , H01L21/31155 , H01L21/76825 , H01L21/76897 , H01L29/0847 , H01L29/401 , H01L29/66795 , H01L29/785 , H01L2029/7858
Abstract: 본발명의실시예에따른반도체장치의제조방법은, 상기활성핀의연장방향과교차하는방향으로연장되는게이트전극의양측에서상기활성핀 상에배치되며소스/드레인영역을형성하는단계, 상기소스드레인영역상에식각정지층을형성하는단계, 상기식각정지층상에층간절연층을형성하는단계, 상기식각정지층이노출되도록상기층간절연층의일부를제거하여개구부를형성하는단계, 상기개구부로상기노출된식각정지층의상면에불순물이온을주입하는단계, 및상기노출된식각정지층을제거하는단계를포함한다.
Abstract translation: 半导体器件的制造方法包括：在基板上形成有源翅片; 在栅极结构两侧的活性鳍片上形成源极/漏极区域，栅极结构在与活性鳍片延伸的方向相交的方向上延伸; 在源/漏区上形成蚀刻停止层; 在所述蚀刻停止层上形成层间介质层; 通过部分去除所述层间电介质层以形成不暴露所述蚀刻停止层而形成第一开口; 通过在第一开口中注入第一杂质离子，在层间电介质层内形成杂质区; 通过去除杂质区域形成第二开口以暴露蚀刻停止层; 将第二杂质离子注入到暴露的蚀刻停止层中; 并去除暴露的蚀刻停止层。
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公开(公告)号：KR1020140010521A
公开(公告)日：2014-01-27
申请号：KR1020120076286
申请日：2012-07-12
Applicant: 삼성전자주식회사
CPC classification number: H01L33/58 , H01L25/0753 , H01L33/382 , H01L33/62 , H01L2224/13 , H01L2933/0066
Abstract: Disclosed are a light emitting diode package and a method for manufacturing the same. The disclosed light emitting diode package comprises at least one light emitting structure, wherein the light emitting structure includes a first compound semiconductor layer; an active layer; a second compound semiconductor layer; at least one first metal layer which is arranged to be connected to the first compound semiconductor layer; a second metal layer which is arranged to be connected to the second compound semiconductor layer; a substrate having a conductive adhesion layer formed on a first surface thereof; and a bonding metal layer for eutectic bonding, which is arranged between the first metal layer and the conductive adhesion layer.
Abstract translation: 公开了一种发光二极管封装及其制造方法。 所公开的发光二极管封装包括至少一个发光结构，其中发光结构包括第一化合物半导体层; 活性层 第二化合物半导体层; 布置成连接到第一化合物半导体层的至少一个第一金属层; 布置成连接到第二化合物半导体层的第二金属层; 具有形成在其第一表面上的导电性粘合层的基板; 以及用于共晶接合的接合金属层，其布置在第一金属层和导电粘合层之间。
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公开(公告)号：KR1020130062736A
公开(公告)日：2013-06-13
申请号：KR1020110129159
申请日：2011-12-05
Applicant: 삼성전자주식회사
IPC: H01L21/20
CPC classification number: C30B25/186 , C30B29/06 , C30B29/403 , H01L21/02381 , H01L21/0243 , H01L21/0254 , H01L21/02639 , H01L21/02658
Abstract: PURPOSE: A silicon substrate, an epitaxial structure having the same, and a method of manufacturing a silicon substrate are provided to reduce the generation of cracks by using a crack prevention part formed in a silicon edge part. CONSTITUTION: A silicon edge part(11) is formed around a silicon main part(12). A crack prevention part(15) is formed on a silicon edge part. The crack prevention part includes a dielectric layer. The dielectric layer is formed in the upper part of the silicon edge part. The dielectric layer includes a nitride layer or an oxide layer.
Abstract translation: 目的：提供硅衬底，具有该硅衬底的外延结构和制造硅衬底的方法，以通过使用形成在硅边缘部分中的防裂部分来减少裂纹的产生。 构成：围绕硅主要部分（12）形成硅边缘部分（11）。 在硅边缘部分上形成防裂部分（15）。 防裂部分包括电介质层。 电介质层形成在硅边缘部分的上部。 电介质层包括氮化物层或氧化物层。
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