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公开(公告)号：KR1020170036995A
公开(公告)日：2017-04-04
申请号：KR1020150136001
申请日：2015-09-25
Applicant: 삼성전자주식회사
CPC classification number: G01N30/88 , C08F297/026 , C08L53/00 , G01N5/04 , G01N30/74 , G01N33/442 , G01N2030/885 , G03F7/0002 , C08L25/06
Abstract: 블록공중합체패턴평가시스템은블록공중합체및 호모폴리머를포함하는샘플을공급하는샘플공급부, 샘플내 블록공중합체의분자량이측정되는분자량분석부, 블록공중합체에포함된각 블록들의샘플내 총비율인예비블록비율을측정하는예비블록비율분석부, 샘플중 호모폴리머의비율을분리측정하는호모폴리머분석부, 및예비블록비율에서호모폴리머의비율의영향을차감하는호모폴리머간섭제거부를포함한다.
Abstract translation: 嵌段共聚物图案评价系统采样的总包含在试样供给部的每个块的比率，所述样品是在嵌段共聚物中，用于供给包含所述嵌段共聚物和所述均聚物的试样的嵌段共聚物的分子量被测定分子分析单元 该方法包括除去部件均聚物干扰中减去所述均聚物预分析单元的均聚物的百分比效应，并且块比率测量分离所述备用块比率分析单元，测量均聚物的试样的比例的备用块的比率。
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公开(公告)号：KR1020100007461A
公开(公告)日：2010-01-22
申请号：KR1020080068104
申请日：2008-07-14
Applicant: 삼성전자주식회사
CPC classification number: C11D11/0052 , C11D7/08 , C11D7/28 , C11D7/3209 , C11D1/66 , C11D7/265
Abstract: PURPOSE: A cleaning solution for quartz parts is provided to effectively remove an impurity thin film and particle remaining on the surface of quartz parts applied to a semiconductor manufacturing apparatus without excessive damage to the quartz parts. CONSTITUTION: A cleaning solution for removing thin film and particle remaining on the surface of quartz parts applied to a semiconductor manufacturing apparatus comprises an ammonium compound 5-20 weight%, acidic oxidizer 10-55 weight%, fluorine compound 5-30 weight% and extra water. A method for cleaning the quartz parts comprises the steps of: (S120) providing the cleaning solution for quartz parts to the quartz parts with remaining impurity thin film; and (S130) removing the impurity thin film by a cleaning process.
Abstract translation: 目的：提供用于石英部件的清洁溶液，以有效地除去残留在施加到半导体制造装置的石英部件的表面上的杂质薄膜和颗粒，而不会对石英部件造成过度损害。 构成：用于除去保留在半导体制造装置上的石英部件表面残留的薄膜和颗粒的清洗液包括5-20重量％的铵化合物，10-55重量％的酸性氧化剂，5-30重量％的氟化合物和5-30重量％的氟化合物， 额外的水。 一种用于清洗石英部件的方法包括以下步骤：（S120）向具有剩余杂质薄膜的石英部件提供用于石英部件的清洁溶液; 和（S130）通过清洗处理去除杂质薄膜。
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公开(公告)号：KR1020080018369A
公开(公告)日：2008-02-28
申请号：KR1020060080382
申请日：2006-08-24
Applicant: 삼성전자주식회사
CPC classification number: C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/32 , C11D7/5022 , C11D11/0041
Abstract: A cleaning solution for removing a polymer, and a method for removing a polymer by using the cleaning solution are provided to remove the polymer adsorbed on a semiconductor manufacturing apparatus without the damage of parts. A cleaning solution for removing a polymer comprises 5-10 wt% of a fluorinated salt; 5-15 wt% of an acid or its salt; and 75-90 wt% of a glycol aqueous solution. Preferably the glycol is represented by OH-R-OH, wherein R is a C2-C5 alkyl group; the acid is sulfuric acid, hydrofluoric acid or nitric acid; the salt is ammonium nitrate, ammonium sulfate or ammonium hydrofluorate; and the fluorinated salt comprises at least one selected from the group consisting of ammonium fluoride, ammonium tetramethyl fluoride, ammonium tetraethyl fluoride, ammonium tetrapropyl fluoride and ammonium tetrabutyl fluoride.
Abstract translation: 提供用于除去聚合物的清洁溶液和通过使用清洁溶液除去聚合物的方法，以除去吸附在半导体制造装置上的聚合物而不损坏部件。 用于除去聚合物的清洁溶液包含5-10重量％的氟化盐; 5-15重量％的酸或其盐; 和75-90重量％的二醇水溶液。 优选地，二醇由OH-R-OH表示，其中R是C 2 -C 5烷基; 酸是硫酸，氢氟酸或硝酸; 盐是硝酸铵，硫酸铵或氢氟酸铵; 并且所述氟化盐包括选自氟化铵，四氟化铵，四氟化铵，四丙基氟化铵和四丁基氟化铵中的至少一种。
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4.发明授权
公开(公告)号：KR100669866B1
公开(公告)日：2007-01-16
申请号：KR1020040101679
申请日：2004-12-06
Applicant: 삼성전자주식회사
IPC: G03F7/32
CPC classification number: C11D7/264 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047
Abstract: 노볼락계 포토레지스트를 선택적으로 제거할 수 있는 포토레지스트 제거용 조성물, 이를 이용한 포토레지스트 제거 방법 및 반도체 장치 제조 방법에서, 상기 포토레지스트 제거용 조성물은 케톤 화합물, 에테르 화합물 및 에스테르 화합물 중하나를 포함하는 제1 극성 비양자성 용매, 및 황을 함유하는 화합물 및 질소를 함유하는 화합물 중 하나를 포함하는 제2 극성 비양자성 용매를 포함한다. 또한, 상기 포토레지스트 제거용 조성물은 제1 극성 비양자성 용매 및 케톤 화합물로 이루어지거나, 제2 극성 비양자성 용매 및 케톤화합물로 이루어지거나, 또는 제1 극성 비양자성 용매 및 제2 극성 비양자성 용매로 이루어질 수도 있다. 씨모스 이미지 센서의 제조 공정에서, 씨모스 이미지 센서에 포함된 구조물의 손상을 최소화하면서 노볼락계 포토레지스트를 선택적으로 제거할 수 있다.
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5.发明公开포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법 失效除去光催化剂的组合物，制备组合物的方法，除去光催化剂的方法和使用其制造半导体装置的方法
公开(公告)号：KR1020060131180A
公开(公告)日：2006-12-20
申请号：KR1020050051421
申请日：2005-06-15
Applicant: 삼성전자주식회사
IPC: G03F7/42
CPC classification number: C11D7/5013 , C11D7/263 , C11D7/266 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047
Abstract: Composition for removing photoresist and its etching residue is provided to effectively remove photoresist and microfine residue after etching the photoresist, and considerably reduce damage of metal wire exposed during photoresist removal by comprising alcohol amide compound, polar non-protonic solvent and general additive. The composition comprises: 5-20wt.% of alcohol amide compound represented by a formula, wherein R1 is hydroxy or hydroxy alkyl group and R2 is hydrogen or hydroxyl alkyl group; 15-60wt.% of polar non-protonic solvent; 0.1-6wt.% of additive; and the balance of water. Alternatively, the composition includes; 5-20wt.% of alcohol amide compound; 15-60wt.% of polar non-protonic solvent; 1-30wt.% of hydroxyl amine or alkanol amine; 0.1-6wt.% of additive; and the balance of water. The composition is used in manufacturing semiconductor device by forming photoresist pattern on a substrate, and adding the prepared photoresist composition to the substrate so as to remove the photoresist pattern.
Abstract translation: 提供用于除去光致抗蚀剂及其蚀刻残留物的组合物，以在蚀刻光致抗蚀剂之后有效去除光致抗蚀剂和微细残留物，并且通过包含醇酰胺化合物，极性非质子溶剂和通用添加剂，显着减少在光致抗蚀剂去除期间暴露的金属线的损伤。 该组合物包含：5-20重量％的由式表示的醇酰胺化合物，其中R1是羟基或羟基烷基，R2是氢或羟基烷基; 极性非质子溶剂15-60重量％ 0.1-6重量％的添加剂; 和水的平衡。 或者，组合物包括： 5-20重量％的醇酰胺化合物; 极性非质子溶剂15-60重量％ 1-30重量％的羟胺或链烷醇胺; 0.1-6重量％的添加剂; 和水的平衡。 通过在基板上形成光致抗蚀剂图案，将该组合物用于制造半导体器件，并将所制备的光致抗蚀剂组合物添加到基板上以除去光致抗蚀剂图案。
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Patent Agency Ranking
公开(公告)号：KR1020060062738A
公开(公告)日：2006-06-12
申请号：KR1020040101679
申请日：2004-12-06
Applicant: 삼성전자주식회사
IPC: G03F7/32
CPC classification number: C11D7/264 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047
Abstract: 노볼락계 포토레지스트를 선택적으로 제거할 수 있는 포토레지스트 제거용 조성물, 이를 이용한 포토레지스트 제거 방법 및 반도체 장치 제조 방법에서, 상기 포토레지스트 제거용 조성물은 케톤 화합물, 에테르 화합물 및 에스테르 화합물 중하나를 포함하는 제1 극성 비양자성 용매, 및 황을 함유하는 화합물 및 질소를 함유하는 화합물 중 하나를 포함하는 제2 극성 비양자성 용매를 포함한다. 또한, 상기 포토레지스트 제거용 조성물은 제1 극성 비양자성 용매 및 케톤 화합물로 이루어지거나, 제2 극성 비양자성 용매 및 케톤화합물로 이루어지거나, 또는 제1 극성 비양자성 용매 및 제2 극성 비양자성 용매로 이루어질 수도 있다. 씨모스 이미지 센서의 제조 공정에서, 씨모스 이미지 센서에 포함된 구조물의 손상을 최소화하면서 노볼락계 포토레지스트를 선택적으로 제거할 수 있다.
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公开(公告)号：KR1020140112230A
公开(公告)日：2014-09-23
申请号：KR1020130026683
申请日：2013-03-13
Applicant: 삼성전자주식회사
IPC: G01N21/956 , H01L21/66
CPC classification number: G01N23/20025 , G01N2223/611
Abstract: According to a method for detecting the inhomogeneity of a film, at least two sections of a film are irradiated with light at a first incident angle. First lights reflected from the two sections are detected. The at least two sections of the film are irradiated with light at a second incident angle. Second lights reflected from the two sections are detected. The inhomogeneity of the film is obtained by comparing the first and second reflection lights. Thus, the present invention can compare the reflectances of the lights totally reflected from foreign materials in the film among the lights reflected from the film with each other by irradiating the lights to the at least two sections of the film at the two or more incident angles; thereby accurately detecting the inhomogeneity of the film. Also, the present invention can prevent pattern defects since it can detect the film having defect factors, such as the foreign materials, beforehand.
Abstract translation: 根据用于检测膜的不均匀性的方法，以至少两个膜以第一入射角照射膜。 检测到从两个部分反射的第一个光。 膜的至少两个部分以第二入射角照射光。 检测到从两个部分反射的第二个光。 通过比较第一和第二反射光获得胶片的不均匀性。 因此，本发明可以比较通过在两个或更多个入射角度将光照射到膜的至少两个部分而将从膜反射的光中的膜中的异物全反射的光的反射率相比较 ; 从而准确地检测膜的不均匀性。 此外，本发明可以预防图案缺陷，因为它可以预先检测诸如异物的缺陷因素的膜。
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公开(公告)号：KR1020070058162A
公开(公告)日：2007-06-08
申请号：KR1020050116489
申请日：2005-12-01
Applicant: 삼성전자주식회사
Abstract: A method of monitoring the contamination level of metals in a chemical cleaning bath is provided to measure the contamination levels of aluminum and tungsten in a chemical cleaning solution in a chemical cleaning bath for a cleaning process of a semiconductor substrate. In a method of monitoring the contamination level of metals in a chemical cleaning bath, after making chelate compound into chelating aqueous solution, acid or base is added into the chelating aqueous solution to firstly adjust pH(S110). Most of metal ions can be contaminant in actual semiconductor process. As a result, property of semiconductors can be fatally affected by the contaminant. Chelate compound is further mixed with positive ion surfactant. The positive ion surfactant contains alkyl ammonium halide. The positive ion surfactant can be added to reduce low limit detection of ultraviolet ray-visible ray spectrophotometer. The chelate compound has a content of 0.0001 weight % to 1.5 weight % of the chelating aqueous solution. The chelating aqueous solution is mixed with chemical cleaning solution at a predetermined ratio to secondly adjust pH(S120).
Abstract translation: 提供了一种监测化学清洗液中金属污染程度的方法，以测量化学清洗液中化学清洗液中的铝和钨的污染水平，用于半导体衬底的清洗工艺。 在化学清洗液中监测金属污染程度的方法中，在将螯合化合物制成螯合水溶液后，将酸或碱加入到螯合水溶液中以首先调节pH（S110）。 大多数金属离子在实际的半导体工艺中可能是污染物。 因此，半导体的性质可能受到污染物的致命影响。 螯合物与正离子表面活性剂进一步混合。 正离子表面活性剂包含烷基卤化铵。 可以添加正离子表面活性剂以减少紫外线 - 可见光分光光度计的下限检测。 螯合化合物的螯合水溶液的含量为0.0001重量％至1.5重量％。 将螯合水溶液以预定比例与化学清洗溶液混合，以二次调节pH（S120）。
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公开(公告)号：KR1020120083170A
公开(公告)日：2012-07-25
申请号：KR1020110004678
申请日：2011-01-17
Applicant: 삼성전자주식회사
IPC: C25D5/02 , C25D21/12 , H01L21/288 , H01L21/312
CPC classification number: C25D21/12
Abstract: PURPOSE: A plating method using a photo-resist residue analysis method for a plating solution is provided to determine the use of plating solution by analyzing the content of photo-resist residue in a plating solution. CONSTITUTION: A plating method using a photo-resist residue analysis method for a plating solution is as follows. The plating solution(15) is provided to a plating bath(10). A first wafer(51) having lower metal wires and photo-resist pattern is dipped in the plating bath. The plating processes are composed of first and second steps. An analyzing step analyzing photo-resist residue is performed between the two steps.
Abstract translation: 目的：提供一种使用电镀液的光致抗蚀剂残留分析方法的电镀方法，以通过分析电镀液中的光致抗蚀剂残留物的含量来确定电镀液的用途。 构成：使用电镀液的光致抗蚀剂残留分析方法的电镀方法如下。 电镀液（15）设置在镀浴（10）中。 将具有下金属线和光致抗蚀剂图案的第一晶片（51）浸入镀浴中。 电镀工艺由第一步和第二步组成。 在两个步骤之间执行分析光刻胶残留物的分析步骤。
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10.发明公开반도체 습식 에천트 및 그를 이용한 배선 구조체의형성방법 无效SEMICONDUCTOR WET ETCHANT AND METHOD OF FORMING INTERCONNISSION STRUCTURE WITH THE SAME
公开(公告)号：KR1020090005489A
公开(公告)日：2009-01-14
申请号：KR1020070068569
申请日：2007-07-09
Applicant: 삼성전자주식회사
IPC: C09K13/08
CPC classification number: H01L21/02087 , C09K13/08 , H01L21/0209 , H01L21/31111 , H01L21/32134
Abstract: A semiconductor wet etchant is provided to remove an insulating layer and a metal layer positioned in the peripheral area of a semiconductor substrate while covering an insulating layer and a metal layer positioned in the central area of a semiconductor substrate with a protective film. A semiconductor wet etchant is manufactured by mixing ionized water, fluorine compound 0.25~10.0 wt%, oxidizer 0.45~3.6 wt% and inorganic salt 1.0~5.0 wt%. The inorganic salt comprises at least one of ammonium ion (NH4+) and chlorine ion (Cl-). The fluorine compound comprises at least one selected from hydrofluoric acid (HF), ammonium fluoride (NH4F), ammonium fluoride (NH4HF2), tetramethyl amonium (TMAF: (CH3)4NF) and tetrabutylammonium fluoride (TBMA: (CH3CH2CH2CH2)4NF). The oxidizer comprises at least one selected from hydrogen peroxide (H2O2), nitric acid (HNO3), sulfuric acid (H2SO4), ammonium nitrate (NH4NO3), ammonium iodate (NH4IO3) and ammonium die sulfite ((NH4) 2S2O5).
Abstract translation: 提供了一种半导体湿式蚀刻剂，用于除去位于半导体衬底的周边区域中的绝缘层和金属层，同时用保护膜覆盖位于半导体衬底的中心区域中的绝缘层和金属层。 通过混合电离水，0.25〜10.0重量％的氟化合物，0.45〜3.6重量％的氧化剂和1.0〜5.0重量％的无机盐，制造半导体湿蚀刻剂。 无机盐包括铵离子（NH 4 +）和氯离子（Cl - ）中的至少一种。 氟化合物包括选自氢氟酸（HF），氟化铵（NH 4 F），氟化铵（NH 4 HF 2），四甲基铵（TMAF：（CH 3）4 NF）和四丁基氟化铵（TBMA：（CH 3 CH 2 CH 2 CH 2）4 NF）中的至少一种。 氧化剂包括选自过氧化氢（H 2 O 2），硝酸（HNO 3），硫酸（H 2 SO 4），硝酸铵（NH 4 NO 3），碘酸铵（NH 4 O 3）和铵亚硫酸铵（（NH 4）2 SO 5）的至少一种。
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