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公开(公告)号：KR1020120126568A
公开(公告)日：2012-11-21
申请号：KR1020110044454
申请日：2011-05-12
Applicant: 서강대학교산학협력단
IPC: G01S5/02
Abstract: PURPOSE: A system and method for recognizing the position of a plurality of target objects are provided to relatively monitor the position of the plurality of target objects with current position of a moving body as the center. CONSTITUTION: A plurality of target objects is comprised of a main target(2) and a plurality of surrounding targets(3). A USN(Ubiquitous Sensor network) tag is attached to the main part target. A moving body(1) comprises an antenna. The antenna receives a wireless signal from a plurality of target objects by being rotated. A position determining part recognizes the position of the plurality of target objects based on wireless communications.
Abstract translation: 目的：提供一种用于识别多个目标物体的位置的系统和方法，用于以移动体的当前位置为中心来相对监视多个目标对象的位置。 构成：多个目标对象由主目标（2）和多个周围目标（3）组成。 USN（无处不在的传感器网络）标签连接到主要部件目标。 移动体（1）包括天线。 天线通过旋转从多个目标对象接收无线信号。 位置确定部分基于无线通信来识别多个目标对象的位置。
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公开(公告)号：KR101049944B1
公开(公告)日：2011-07-15
申请号：KR1020100045339
申请日：2010-05-14
Applicant: 서강대학교산학협력단
CPC classification number: G06K19/07758 , G06K7/10297 , G06K2017/0087
Abstract: PURPOSE: A radiopharmaceutical manufacturing system and method for controlling the same are provided to exactly control synchronizing step of a radiopharmaceutical and effectively prevent manufacturing failure. CONSTITUTION: An RFID(Radio Frequency ID) tag(300) is combined to a cassette(100). An RFID reader/writer(400) reads information from the RFID tag and writes the information to the RFID tag. A control unit writes information about a process state of a synchronizing step to the RFID tag. The control unit controls synchronizing device according to the information read from the RFID reader/writer. The RFID tag has a memory recording whether to use the cassette or not and whether to succeed the synchronizing step.
Abstract translation: 目的：提供放射性药物制造系统及其控制方法，以精确控制放射性药物的同步步骤，有效防止制造失败。 构成：将RFID（射频识别码）标签（300）组合到盒（100）。 RFID读取器/写入器（400）从RFID标签读取信息并将信息写入RFID标签。 控制单元将关于同步步骤的处理状态的信息写入RFID标签。 控制单元根据从RFID读写器读取的信息来控制同步装置。 RFID标签具有记录是否使用盒式磁带以及是否成功进行同步步骤。
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公开(公告)号：KR1020170075289A
公开(公告)日：2017-07-03
申请号：KR1020150184746
申请日：2015-12-23
Applicant: 서강대학교산학협력단
IPC: H01L29/872 , H01L29/40 , H01L29/66 , H01L29/06 , H01L21/768
Abstract: 본발명은트랜치모스배리어쇼트키(Trench MOS Barrier Schottky) 구조에관한것으로서, 드리프트영역, 드리프트영역상단에위치하여드리프트영역과쇼트키장벽을형성하는금속층및 드리프트영역과금속층이형성하는쇼트키장벽에서드리트프영역방향으로삽입되어형성되는필라(pillar)를포함함으로써높은항복전압과낮은온저항을가진다.
Abstract translation: 本发明是一个沟槽MOS势垒肖特基涉及（沟槽MOS势垒肖特基）结构，所述漂移区，位于距由所述金属层和所述漂移区域和所述金属层的肖特基势垒的漂移区的顶部以形成所述漂移区域和所述肖特基势垒 通过包括支柱（支柱）形成被插入到衣物teupeu区域方向，并且具有高击穿电压和低的导通电阻。
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公开(公告)号：KR101590603B1
公开(公告)日：2016-02-01
申请号：KR1020130121029
申请日：2013-10-11
Applicant: 서강대학교산학협력단
IPC: C12N5/074 , C12N5/02 , C07D311/00
CPC classification number: C12N5/0696 , C07D311/22 , C07D311/30 , C07D403/06 , C12N2500/76 , C12N2502/1347 , C12N2506/45
Abstract: 본발명은 (a) 유도만능줄기세포를분화시켜미분화유도만능줄기세포및 분화세포(differentiated cells)를포함하는세포시료를준비(preparation)하는단계; 및 (b) 상기단계 (a)의결과물에다음화학식 1의쿠어세틴(Quercetin) 또는다음화학식 2의 YM-155을처리하여미분화유도만능줄기세포를선택적으로사멸시키는단계를포함하며, 미분화유도만능줄기세포(induced pluripotent stem cell: iPS)가제거된, 유도만능줄기세포유래분화세포의제조방법에관한것이다. 본발명에따르면, 본발명은유도만능줄기세포로부터특정분화세포로분화시킨후, 쿠어세틴또는 YM-155을포함하는분화용배지에서배양함으로써, 미분화된유도만능줄기세포만을효과적으로선택적사멸시킬수 있으며, 본발명에따른유도만능줄기세포분화방법은테라토마형성의원인이되는미분화된유도만능줄기세포만을선택적사멸하여분화된분화세포에는전혀영향을미치지않는다. 즉, 분화세포의생존능및 기능은그대로유지시키므로, 임상에있어세포치료제로의적용시 종양형성가능성을배제함으로써안전성확보가기대된다.
Abstract translation: 本发明涉及一种用于制备衍生自诱导多能干细胞的分化细胞的方法，其中去除未分化的诱导多能干细胞（iPS），所述方法包括以下步骤：（a）制备包含未分化的诱导多能干细胞的细胞样品， 通过分化诱导的多能干细胞分化细胞; 和（b）通过用下述式1的槲皮素或下面的式2的YM-155处理步骤（a）中的所得物，引起未分化的诱导多能干细胞的选择性细胞凋亡。 根据本发明，通过使诱导多能干细胞分化为特异性分化细胞，然后在包含槲皮素或YM的分化培养基中进行培养，本发明使得可以有效地选择性地诱导未分化的诱导多能干细胞的凋亡 -155，并且在根据本发明的诱导多能干细胞分化方法中，仅选择性地引起成为畸胎瘤形成的原因的未分化的诱导多能干细胞死亡，因此分化的分化细胞完全不受影响。 换句话说，由于分化细胞的存活和功能保持不变，所以预期本发明可以确保作为细胞治疗剂在临床使用期间肿瘤形成的可能性的安全性。
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公开(公告)号：KR101590477B1
公开(公告)日：2016-02-01
申请号：KR1020140049999
申请日：2014-04-25
Applicant: 서강대학교산학협력단
IPC: H01L29/872 , H01L21/265
Abstract: 본발명은실리콘카바이드쇼트키다이오드및 그의제조방법에관한것으로, 실리콘카바이드쇼트키다이오드의제조방법은, N형 SiC 기판위에 N형에피층(epilayer)을성장시킨후 식각(etching)함으로써트렌치(trench) 구조를형성하고, 트렌치구조의일측벽면에 N+ 도핑층을형성하고트렌치구조내의나머지부분을부도체로절연하며, N형에피층및 트렌치구조를통해노출된부도체의상단영역에금속박막을이용한전계판(field plate)을증착한다.
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Patent Agency Ranking
公开(公告)号：KR101581690B1
公开(公告)日：2015-12-31
申请号：KR1020130167249
申请日：2013-12-30
Applicant: 서강대학교산학협력단
IPC: H01L21/336
Abstract: 측면확산 MOS 소자및 그의제조방법이개시된다. 측면확산 MOS 소자의제조방법은, 제 1 도전형반도체기판에이온주입(ion implantation)을수행하여제 1 도전형반도체기판의상단에제 2 도전형소스(source) 영역과제 2 도전형드레인(drain) 영역을각각형성하고, 제 1 도전형반도체기판에이온주입을수행하여제 2 도전형드레인영역의일측에제 2 도전형드리프트영역을형성하고, 제 2 도전형소스영역과제 2 도전형드리프트(drift) 영역간에위치한제 1 도전형반도체기판의상부에제 1 도전형도핑(doping)을수행하고, 제 2 도전형소스영역과제 2 도전형드리프트영역간에위치한제 1 도전형반도체기판의상부에산화막을형성하고, 제 1 도전형반도체기판과산화막간의계면에어닐링(annealing)을수행하며, 산화막상단에금속의게이트를형성한다.
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公开(公告)号：KR1020150123526A
公开(公告)日：2015-11-04
申请号：KR1020140049999
申请日：2014-04-25
Applicant: 서강대학교산학협력단
IPC: H01L29/872 , H01L21/265
CPC classification number: H01L29/872 , H01L21/265 , H01L29/78
Abstract: 본발명은실리콘카바이드쇼트키다이오드및 그의제조방법에관한것으로, 실리콘카바이드쇼트키다이오드의제조방법은, N형 SiC 기판위에 N형에피층(epilayer)을성장시킨후 식각(etching)함으로써트렌치(trench) 구조를형성하고, 트렌치구조의일측벽면에 N+ 도핑층을형성하고트렌치구조내의나머지부분을부도체로절연하며, N형에피층및 트렌치구조를통해노출된부도체의상단영역에금속박막을이용한전계판(field plate)을증착한다.
Abstract translation: 本发明涉及使用倾斜离子注入的碳化硅肖特基势垒二极管及其制造方法。 制造碳化硅肖特基势垒二极管的方法包括以下步骤：在N型外延层在N型SiC衬底上生长之后，通过蚀刻N型外延层来形成沟槽结构; 在沟槽结构一侧的壁上形成N +掺杂层; 用非导体绝缘沟槽结构的剩余部分; 以及在通过沟槽结构和N型外延层暴露的非导体的上部区域上使用金属薄膜沉积场板。
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公开(公告)号：KR1020140056971A
公开(公告)日：2014-05-12
申请号：KR1020120123502
申请日：2012-11-02
Applicant: 서강대학교산학협력단
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/7813 , H01L29/4236 , H01L29/66734
Abstract: The present invention relates to a power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), and more particularly, to a power MOSFET of which a switching performance of a trench power MOSFET is improved. The improvement in the switching performance of the disclosed power MOSFET is achieved by depositing a material to be used as an electrode only in a portion of a region of a trench in which a gate electrode of a trench power MOSFET is formed. The switching performance of the trench power MOSFET according to the present invention can be improved by only allowing a thickness (sectional area) of the material used as the gate electrode to be thin (small) to reduce mirror current. In addition, since the remaining region of the trench, on which any electrode materials are not deposited, does not at all exert an influence on an operation of a device, an additional application can be utilized so that utility of the device can be increased. Further, unlike trench gate MOSFETs of the related art intended to improve the switching properties, additional complex and difficult processes are not required, so that the time and costs consumed for a fabricating process can be reduced as compared with those of the trench gate MOSFETs of the related art intended to improve the switching properties.
Abstract translation: 功率MOSFET（金属氧化物半导体场效应晶体管）技术领域本发明涉及功率MOSFET（金属氧化物半导体场效应晶体管），更具体地说，涉及提高沟槽功率MOSFET的开关性能的功率MOSFET。 所公开的功率MOSFET的开关性能的改善通过在仅形成沟槽功率MOSFET的栅电极的沟槽的一部分中沉积用作电极的材料来实现。 根据本发明的沟槽功率MOSFET的开关性能可以通过仅使用作为栅电极的材料的厚度（截面面积）变薄（小）来改善，以减少镜电流。 此外，由于在其上没有沉积任何电极材料的沟槽的剩余区域对设备的操作并不起到影响，因此可以利用附加应用，从而可以提高设备的使用性。 此外，与用于提高开关特性的现有技术的沟槽栅极MOSFET不同，不需要额外的复杂和困难的工艺，因此与制造工艺相比，沟槽栅极MOSFET的时间和成本可以降低 相关技术旨在提高开关特性。
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公开(公告)号：KR101352766B1
公开(公告)日：2014-01-15
申请号：KR1020110131223
申请日：2011-12-08
Applicant: 서강대학교산학협력단
IPC: H01L29/78 , H01L21/336
Abstract: 본 발명은 수평 게이트 IGBT 소자에 관한 것으로서, P+ 콜렉터 영역에 접하는 콜렉터 전극, P+ 에미터 영역과 N+ 에미터 영역에 접하는 제 1 에미터 전극, 및 N 드리프트 층에 접하는 수평 게이트 전극을 포함하고, 상기 수평 게이트 전극은 2개의 수평 게이트 서브 전극들로 나뉘고, 상기 수평 게이트 서브 전극들에 nMOS가 연결되어 있으며, 상기 콜렉터 전극에 접하는 P+ 콜렉터 영역은 적어도 하나 이상의 산화막으로 분리되는 것을 특징으로 하며 순방향 특성, 턴-오프 특성, 및 래치업 특성이 좋다.
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公开(公告)号：KR1020120126567A
公开(公告)日：2012-11-21
申请号：KR1020110044453
申请日：2011-05-12
Applicant: 서강대학교산학협력단
Abstract: PURPOSE: A microwave heating device is provided to separate an oscillator and a reactor and to transmit microwaves through a flexible cable, thereby minimizing limitations on an installation space. CONSTITUTION: A microwave heating device comprises an oscillator(1), a reactor, a cable(3), and a controlling module(4). The oscillator outputs microwaves. The reactor comprises a cavity resonator and a temperature sensor. The cavity resonator generates resonance in the microwaves. The cable connects the oscillator and the resonator so that the microwaves are transmitted. The controlling module controls the output of the microwaves of the oscillator according to a set condition, thereby controlling a heating of a specimen being accommodated in the reactor.
Abstract translation: 目的：提供微波加热装置来分离振荡器和电抗器，并通过柔性电缆传输微波，从而最大限度地减少对安装空间的限制。 构成：微波加热装置包括振荡器（1），反应器，电缆（3）和控制模块（4）。 振荡器输出微波。 电抗器包括空腔谐振器和温度传感器。 空腔谐振器在微波中产生谐振。 电缆连接振荡器和谐振器，以便传输微波。 控制模块根据设定条件控制振荡器的微波输出，从而控制容纳在反应器中的试样的加热。
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