公开(公告)号：KR1020120125895A

公开(公告)日：2012-11-19

申请号：KR1020110043627

申请日：2011-05-09

Applicant: 한국과학기술연구원

Inventor： 전영민 ,  장지웅 ,  변영태 ,  우덕하 ,  이석 ,  김선호 ,  김신근 ,  김재헌 ,  이택진 ,  박민철

IPC: G01N27/414 ,  G01N27/416

Abstract: PURPOSE: An automatic measuring system of a multi-sensor is provided to automatically process a probe pin inspection, an individual sensor inspection and electrical property measurement of a multi-sensor. CONSTITUTION: An automatic measuring system(100) of a multi-sensor comprises a voltage supply unit(110), a current and resistance measurement unit(120), a relay unit(130), a multiplexer unit(140), and a controller(150). The voltage supply unit supplies voltage for detection through a probe(52). The current and resistance measurement unit measures the current or resistance of individual sensors or individual probes. The relay unit switches on/off terminals of the individual sensors and individual probes when supplying voltage to a multi-sensor or receiving measurement signals from the multi-sensor. The multiplexer unit selects one among a plurality of the sensors in order to measure the current of the individual sensor while in the state that a voltage supply to the individual sensors is not cut off. The controller receives an input of a user, thereby controlling the voltage supply unit, the current and resistance measurement unit, the relay unit, and the multiplexer unit, or a controlling device of a probe station. [Reference numerals] (110) Voltage supply unit; (120) Current and resistance measuring unit; (130) Relay unit; (140) Multi-flexible unit; (150) Controller; (160) Semiconductor variable analyzer; (83) Probe chuck fixing arm controlling device; (85) Sensor transferring arm controlling device; (87) Cleaning pad transferring arm controlling device; (AA) PCB circuit

Abstract translation: 目的：提供多传感器的自动测量系统，以自动处理多针传感器的探针检测，单个传感器检测和电气性能测量。 构成：多传感器的自动测量系统（100）包括电压供应单元（110），电流和电阻测量单元（120），中继单元（130），多路复用器单元（140）和控制器 （150）。 电压供应单元通过探头（52）提供用于检测的电压。 电流和电阻测量单元测量各个传感器或单个探头的电流或电阻。 当向多传感器提供电压或从多传感器接收测量信号时，继电器单元接通各个传感器和各个探头的接通/断开端子。 多路复用器单元选择多个传感器中的一个，以便在对各个传感器的电压供应不被切断的状态下测量各个传感器的电流。 控制器接收用户的输入，从而控制电压供应单元，电流和电阻测量单元，中继单元和多路复用器单元或探测台的控制设备。 （附图标记）（110）供电单元; （120）电流和电阻测量单元; （130）继电器单元; （140）多功能单元; （150）控制器; （160）半导体可变分析仪; （83）探头卡盘固定臂控制装置; （85）传感器臂控制装置; （87）清洁垫传送臂控制装置; （AA）PCB电路

公开(公告)号：KR1020120122179A

公开(公告)日：2012-11-07

申请号：KR1020110040199

申请日：2011-04-28

Applicant: 한국과학기술연구원

Inventor： 전영민 ,  장지웅 ,  변영태 ,  우덕하 ,  이석 ,  김재헌 ,  이택진 ,  김신근 ,  김선호

IPC: G01D11/24 ,  G01N27/00 ,  G01N33/00

CPC classification number: G01D11/30 ,  G01N33/0004

Abstract: PURPOSE: A probe station for a multi-sensor is provided to replace a probe chuck of an assembly form including a probe socket when the replacement of the probe chuck is necessary, thereby easily replace the probe chuck. CONSTITUTION: A probe station for a multi-sensor comprises a lower body(20), an upper body(10), a probe chuck(50), a probe elevating unit(30), and a sensor support plate(60). The upper body is closed and opened by being connected to the lower body with a hinge. The probe chuck is fixed so that a probe(52) is extended downwardly. The probe chuck is joined to the upper body so that the probe is exposed to the lower part of the upper body. The probe elevating unit elevates the probe chuck and is installed in the upper body. A sensor seating groove is formed in the lower part of the probe chuck in the lower body when the upper body is closed with respect to the lower body. The sensor supporting plate forms the bottom surface of the sensor seating groove and is installed to be touch to the probe.

Abstract translation: 目的：当需要更换探头卡盘时，提供用于多传感器的探测台来替换包括探针插座的组件形式的探头卡盘，从而可以方便地更换探头卡盘。 构成：用于多传感器的探测台包括下体（20），上体（10），探头卡盘（50），探头升降单元（30）和传感器支撑板（60）。 通过用铰链连接到下身，上身被封闭并打开。 探针卡盘被固定，使得探针（52）向下延伸。 探头卡盘与上体接合，使得探头暴露于上身的下部。 探头升降单元升高探头卡盘，并安装在上身上。 当上身相对于下身体关闭时，传感器安置槽形成在下体中的探头卡盘的下部。 传感器支撑板形成传感器安置槽的底面，并安装成与探头接触。

公开(公告)号：KR1020110135138A

公开(公告)日：2011-12-16

申请号：KR1020100054881

申请日：2010-06-10

Applicant: 한국과학기술연구원

Inventor： 우덕하 ,  김선호 ,  이석 ,  변영태 ,  전영민 ,  김재헌 ,  박민철 ,  김신근 ,  정용우

IPC: C23C14/24 ,  C23C14/04

CPC classification number: C23C14/243 ,  C23C14/12 ,  C23C14/14 ,  C23C14/26

Abstract: PURPOSE: A side emitting type linear evaporation source, a manufacturing method thereof, and a linear evaporator are provided to uniformly evaporate materials on a large-size substrate. CONSTITUTION: A side emitting type linear evaporation source comprises a Pyrolytic Boron Nitride crucible(10). A first heating unit(20), multiple side discharging units, a first protection film, and an insulation unit. The top of the PBN crucible is opened to accept materials. The first heating unit is evaporated on the outer surface of the PBN crucible. Patterns suitable for heating are formed on the first heating unit. The side discharging units are formed by passing through the side surface of the PBN crucible and the first heating unit. The first protection film is formed on the inner surface of the PBN crucible and the surface of the side discharging units. The insulating unit electrically insulates the first heating unit from the first protection film.

Abstract translation: 目的：提供侧面发射型线性蒸发源，其制造方法和线性蒸发器以均匀蒸发大尺寸基板上的材料。 构成：侧面发射型线性蒸发源包括热解氮化硼坩埚（10）。 第一加热单元（20），多个侧排出单元，第一保护膜和绝缘单元。 打开PBN坩埚的顶部接受材料。 第一加热单元在PBN坩埚的外表面上蒸发。 适于加热的图案形成在第一加热单元上。 侧排出单元通过穿过PBN坩埚和第一加热单元的侧表面而形成。 第一保护膜形成在PBN坩埚的内表面和侧排出单元的表面上。 绝缘单元将第一加热单元与第一保护膜电绝缘。

公开(公告)号：KR101085953B1

公开(公告)日：2011-11-22

申请号：KR1020100040571

申请日：2010-04-30

Applicant: 한국과학기술연구원

Inventor： 우덕하 ,  김선호 ,  이석 ,  변영태 ,  전영민 ,  김재헌 ,  박민철 ,  김신근 ,  정용우

IPC: H01L31/04

CPC classification number: Y02E10/542 ,  Y02P70/521

Abstract: 유리기판 위에 전도성막을 형성하고 그 위에 염료 분자가 흡착된 나노 반도체 산화물 입자를 전극 소재로 사용하는 염료감응형 태양전지 및 그의 제조 방법이 개시된다. 본 발명의 염료감응형 태양전지는 홈(구멍)이 형성된 전도성막의 표면에 부착되는 반도체 입자들 및 이들 상에 적층되는 반도체 입자들을 상기 홈 내 또는 홈 상부에 구비하는 나노 산화물 전극층을 포함한다. 이때 홈의 반경은 20 마이크로미터 이하일 수 있고, 홈의 깊이는 20 마이크로미터 이상일 수 있다. 홈은, 벽 구조, 격벽 구조, 기둥 구조 중 어느 하나이다.
이러한 염료감응형 태양전지는, 유리기판 위에 전도성막을 입히고, 전도성막에 적어도 하나의 홈(구멍)을 형성한 후, 홈 내 또는 홈의 상부까지 나노 산화물 전극층을 형성함으로써, 제조 가능하다. 또는, 유리기판 위에 적어도 하나의 홈(구멍)을 형성하고, 홈의 측면 및 홈의 하부에 전도성막을 입힌 후(홈의 기둥 상부에 전도성막을 추가적으로 입힐 수도 있음), 홈 내 또는 홈의 상부까지 나노 산화물 전극층을 형성함으로써, 제조 가능하다.

公开(公告)号：KR1020110057604A

公开(公告)日：2011-06-01

申请号：KR1020090114068

申请日：2009-11-24

Applicant: 한국과학기술연구원

Inventor： 우덕하 ,  김선호 ,  이석 ,  변영태 ,  전영민 ,  김재헌 ,  김신근

IPC: C23C14/24

Abstract: PURPOSE: A heater-integrated molecular beam evaporation source for vacuum deposition, a manufacturing method thereof, and an evaporator using the same are provided to minimize the thermal load of a vacuum system by controlling the temperature of a heater to be similar to the temperature of a crucible. CONSTITUTION: A heater-integrated molecular beam evaporation source for vacuum deposition comprises a PBN(Pyrolytic Boron Nitride) crucible(10), a first heater(20), and a first protective film. The PBN crucible accepts materials. The first heater is deposited on the outer surface of the PBN crucible and forms a pattern proper for heating without influence of magnetic field on a specimen. The first protective film is deposited on the inner surface of the PBN crucible to protect the crucible from the specimen easy to adhere to PBN and partially removed for insulation from the first heater.

Abstract translation: 目的：提供一种用于真空沉积的加热器集成分子束蒸发源，其制造方法和使用其的蒸发器，以通过将加热器的温度控制为与加热器的温度相似来最小化真空系统的热负荷 一个坩埚 构成：用于真空沉积的加热器集成分子束蒸发源包括PBN（热解氮化硼）坩埚（10），第一加热器（20）和第一保护膜。 PBN坩埚接受材料。 第一个加热器沉积在PBN坩埚的外表面上，并形成适合加热的图案，而不影响样品上的磁场。 第一保护膜沉积在PBN坩埚的内表面上，以保护坩埚容易粘附到PBN上，并部分地从第一加热器去除绝缘。

公开(公告)号：KR1020110044360A

公开(公告)日：2011-04-29

申请号：KR1020090100982

申请日：2009-10-23

Applicant: 한국과학기술연구원

Inventor： 변영태 ,  김선호 ,  이석 ,  우덕하 ,  김신근 ,  김경헌 ,  김수현

IPC: B82B3/00 ,  H01L21/027 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L29/66477 ,  B82B3/0004 ,  B82B3/0038 ,  G01N27/3272 ,  G01N27/4145 ,  H01L29/78

Abstract: PURPOSE: The selective assembling method of a single-walled carbon nanotube and a method for manufacturing a field effect transistor with a single-walled carbon nanotube multichannel using the same are provided to prevent the dropping phenomenon of the carbon nanotube from the multichannel. CONSTITUTION: The surface of a substrate is processed into the hydrophilic property. One of natural oxide film, a thermal oxide film, a spin-on-glass-based oxide film, a PECVD-based oxide film, or LPCVD-based oxide film is deposited on the substrate. Single-walled carbon nanotube is selectively assembled with the surface of the oxide film, on the surface of which is processed. The selective arranged pattern of the single-walled carbon nanotube is formed using a photo-resist pattern.

Abstract translation: 目的：提供单壁碳纳米管的选择性组装方法和使用其的具有单壁碳纳米管多通道的场效应晶体管的制造方法，以防止来自多通道的碳纳米管的滴落现象。 构成：将基材的表面加工成亲水性。 天然氧化物膜，热氧化膜，旋涂玻璃基氧化物膜，PECVD基氧化物膜或LPCVD基氧化物膜之一沉积在衬底上。 单壁碳纳米管与氧化膜的表面选择性地组装，其表面被加工。 单壁碳纳米管的选择排列图案使用光刻胶图案形成。

公开(公告)号：KR1020110032466A

公开(公告)日：2011-03-30

申请号：KR1020090089968

申请日：2009-09-23

Applicant: 한국과학기술연구원

Inventor： 변영태 ,  김선호 ,  이석 ,  전영민 ,  김신근 ,  김경헌 ,  김수현

IPC: H01L21/027 ,  H01L21/336

CPC classification number: H01L29/66477 ,  G03F7/162 ,  G03F7/422 ,  H01L21/0274

Abstract: PURPOSE: A selective assembled method of nano-materials by using only photolithography and a fabrication method of a nano-structure multichannel FET devices using thereof are provided to reduce a process step by enabling nano particles to be attached to a substrate through a photolithography and a solution process. CONSTITUTION: In a selective assembled method of nano-materials by using only photolithography and a fabrication method of a nano-structure multichannel FET devices using thereof, an oxide film(SiO2) is formed on a silicon substrate. A random PR pattern is formed on the oxide film through the photo lithography process(S110). A nano-material is absorbed to the surface of a sample through a solution process(S120). A photoresist pattern on the surface of the sample having the nano particles is removed(S130). A multichannel FET device is manufactured by using selectively patterned nano-material.

Abstract translation: 目的：提供通过仅使用光刻法的纳米材料的选择性组装方法和使用其的纳米结构多通道FET器件的制造方法，以通过使纳米颗粒通过光刻和 解决过程。 构成：在仅使用光刻法的纳米材料的选择性组装方法和使用其的纳米结构多通道FET器件的制造方法中，在硅衬底上形成氧化膜（SiO 2）。 通过光刻工艺在氧化膜上形成随机的PR图案（S110）。 通过溶液法将纳米材料吸收到样品的表面（S120）。 除去具有纳米颗粒的样品表面上的光刻胶图案（S130）。 通过使用选择性图案化的纳米材料制造多通道FET器件。

公开(公告)号：KR1020100081643A

公开(公告)日：2010-07-15

申请号：KR1020090000960

申请日：2009-01-06

Applicant: 한국과학기술연구원

Inventor： 이석 ,  변영태 ,  김선호 ,  우덕하 ,  전영민 ,  김신근 ,  김형석

IPC: H04W4/02 ,  H04W84/18 ,  H04W64/00 ,  H04W88/02

CPC classification number: H04W64/00 ,  H04W84/18 ,  H04W88/02

Abstract: PURPOSE: A system for measuring a position of a mobile device using a wireless short range communication is provided to measure the position of a mobile device by calculating the distance between devices based on the returning time of a wireless communication frame. CONSTITUTION: A position measurement sensor network includes a position detection unit and a position information server. The position detection unit detects a position of a wireless communication unit(10) located in a certain area by using short range wireless communication. The location information management server processes the position information data to create location information contents, and an output device outputs the location information contents.

Abstract translation: 目的：提供一种使用无线短距离通信来测量移动设备的位置的系统，用于通过基于无线通信帧的返回时间计算设备之间的距离来测量移动设备的位置。 构成：位置测量传感器网络包括位置检测单元和位置信息服务器。 位置检测单元通过使用短距离无线通信来检测位于特定区域中的无线通信单元（10）的位置。 位置信息管理服务器处理位置信息数据以创建位置信息内容，输出设备输出位置信息内容。

公开(公告)号：KR100307885B1

公开(公告)日：2001-10-29

申请号：KR1019990020357

申请日：1999-06-03

Applicant: 한국과학기술연구원

Inventor： 조재철 ,  최상삼 ,  김선호 ,  김상혁 ,  김동환 ,  김신근 ,  이재하

IPC: H03L7/00

Abstract: 본발명은광시분할방식의광통신에활용될수 있는광 위상동기루프회로에관한것으로, 입사하는광펄스신호와위상과주파수가동일한펄스열을재생시키는것을목적으로한다. 이러한광 위상동기루프회로는미리설정된제1 고주파신호를생성하는고주파발생기, 이고주파발생기에의해구동되어클럭광펄스를출사하는광원, 제2 고주파신호를생성하는전압제어발진기(voltage-controlled oscillator), 입사하는광펄스신호와클럭광펄스를혼합함으로써생성된광파만을필터링및 증폭하여제1 신호로변환하는제1 제어부, 고주파발생기와전압제어발진기로부터각기생성된제1 및제2 고주파신호를혼합하여저주파신호로하향변환하는다운-컨버터믹서(down-converter mixer), 제1 신호와저주파신호를각기전기적펄스신호로변환하는펄스변환기, 및펄스변환기로부터출력되는각각의전기적펄스신호의위상차를측정하여이 위상차에비례하는제어전압을출력하는제2 제어부를포함하여, 제어전압으로전압제어발진기를제어하여입사하는광펄스신호와제2 고주파신호를동기시키는것과광 클럭을안정되게구동시키는것을특징으로한다.

公开(公告)号：KR1020160080674A

公开(公告)日：2016-07-08

申请号：KR1020140193372

申请日：2014-12-30

Applicant: 한국과학기술연구원

Inventor： 변영태 ,  김선호 ,  김재성 ,  이제행 ,  김신근

IPC: H01L29/06 ,  H01L21/027

CPC classification number: H01L29/0669 ,  H01L21/0273 ,  H01L2924/13061

Abstract: 본발명은, a) 기판상에절연막을형성하는단계; (b) 상기절연막상의탄소나노튜브흡착영역에격자또는스트라이프형태의포토레지스트패턴을형성하는단계; (c) 상기포토레지스트패턴을따라상기절연막을식각(etching)하는단계; (d) 상기절연막이식각된기판에탄소나노튜브입자를흡착하는단계; (e) 상기탄소나노튜브가흡착된기판표면의포토레지스트패턴을제거하는단계; 및 (f) 상기포토레지스트패턴이제거된상기절연막상에전극을형성하는단계를포함하는탄소나노튜브센서의제조방법및 이에의하여제조된탄소나노튜브센서에관한것이다.

Abstract translation: 碳纳米管传感器的制造方法技术领域本发明涉及一种碳纳米管传感器的制造方法以及由此制造的碳纳米管传感器。碳纳米管传感器的制造方法包括以下步骤：（a）在基板上形成绝缘膜; （b）在绝缘膜的碳纳米管吸附区域中形成格子状或条状的光致抗蚀剂图案; （c）根据光致抗蚀剂图案蚀刻绝缘膜; （d）在蚀刻绝缘膜的基板上吸附碳纳米管粒子; （e）除去吸附有碳纳米管的基板表面的光致抗蚀剂图案; 和（f）在除去光致抗蚀剂图案的绝缘膜上形成电极。 本发明的目的是提供一种制造碳纳米管传感器和碳纳米管传感器的方法，该碳纳米管传感器能够沿固定方向排列碳纳米管。