公开(公告)号：KR1019960042827A

公开(公告)日：1996-12-21

申请号：KR1019950012958

申请日：1995-05-24

Applicant: 오리온전기 주식회사 ,  한국과학기술연구원

Inventor： 신동기 ,  이복수 ,  윤상열 ,  최돈빈 ,  이민수 ,  손호석 ,  오명환 ,  김창홍 ,  변종홍 ,  안광덕 ,  박태석 ,  한택상 ,  손용배 ,  유병용 ,  박영호

IPC: H01J9/233

Abstract: 형광막을 균일하게 형성하기 위해 광전도막에 균일하게 대전하여 스크린을 제조하는 방법이 제공된다. (1) 상기 판넬내면에 휘발성전도막을 형성시키는 1차코팅 단계; (2)그 전도막위에 전기적 절연을 위한 절연막을 형성시키는 2차코팅 단계;(3) 그 절연막위에 제1파장역의 광선에 감응하는 물질을 함유하는 휘발성의 제1광전도막을 형성시키는 3차코팅단계; (4)그 제1광전도막위에 제2파장역의 광선에 감응하는 물질을 함유하는 휘발성의 제2광전도막을 형성시키는 4차코팅 단계;(5) 그 제2광전도막에 -직류전극을 인가하고 상기 전도막에 +직류전극을 인가하면서 그 제2광전도막에 제2파장역의 광선을 전면에 걸쳐 노광하므로서 균일한 정전하를 그 제2광전도막에 대전시키는 대전단계; (6) 그 제2광전도막의 정전하를선택적으로 제1광전도막에 이동시키도록 제1파장역의 광선으로 새도우마스크를 통과시켜 노광하는 노광단계; 그리고 (7)상기 노광단계(6)에서 정전하가 선택적으로 이동된 제1광전도막의 노광부분과 그 나머지 비노광부분중 어느 하나의 영역에 대전된 미세분말을 부착시키는 현상단계를 포함한다. 이에 따라, 코로나방전장치와 같은 방전장치가 필요없을 뿐만 아니라 복잡한 방전조건을 조절할 필요없이 대전을 균일하게 할 수 있고, 공정도 단순화되며, 형광체 도포두께 및 크기, 형상등을 균일하게 할 수 있는 효과가 있다.

公开(公告)号：KR100081645B1

公开(公告)日：1995-01-20

申请号：KR1019910020835

申请日：1991-11-21

Applicant: 한국과학기술연구원

Inventor： 주병권 ,  오명환

IPC: H01L21/30

公开(公告)号：KR1019940010493B1

公开(公告)日：1994-10-24

申请号：KR1019910020836

申请日：1991-11-21

Applicant: 한국과학기술연구원

Inventor： 주병권 ,  오명환 ,  강광남

IPC: H01L21/30

CPC classification number: H01L21/67121 ,  H01L21/187

Abstract: To increase the bonding strength and to remove the micro-gaps incured at bonding two sillicon wafers, the silicon fusion bonding method and equipment were developed. The equipment is composed of a wet oxidation equipment and a quartz spacer separating two wafers (w1,w2). The wafers are bonded by filling the micro-gaps located at junction interface with the wet oxide through the high temperature thermal annealing, which is followed by the stabilization process absorbing a great deal of oxidant. This method can be applied to growing a silicon on an insulation film and forming the micromachine structure for silicon sensors

Abstract translation: 为了增加接合强度并去除粘合两个硅衬底晶片时产生的微缝隙，开发了硅熔接法和设备。 该设备由湿氧化设备和分离两个晶片（w1，w2）的石英间隔件组成。 通过高温热退火填充位于与湿氧化物接合界面处的微缝隙，其后是稳定化过程吸收大量的氧化剂，从而结合晶片。 该方法可用于在绝缘膜上生长硅并形成用于硅传感器的微机械结构

公开(公告)号：KR1019930011105A

公开(公告)日：1993-06-23

申请号：KR1019910020835

申请日：1991-11-21

Applicant: 한국과학기술연구원

Inventor： 주병권 ,  오명환

IPC: H01L21/30

公开(公告)号：KR200065598Y1

公开(公告)日：1992-06-24

申请号：KR2019890018924

申请日：1989-12-14

Applicant: 한국과학기술연구원

Inventor： 정기호 ,  오명환 ,  이경재 ,  이남양 ,  김명식

IPC: H02H9/02

公开(公告)号：KR1019920002204B1

公开(公告)日：1992-03-19

申请号：KR1019890010534

申请日：1989-07-25

Applicant: 한국과학기술연구원

Inventor： 이경재 ,  오명환 ,  정기호

IPC: H04M3/22 ,  H04M1/00

CPC classification number: H04M3/18 ,  H01H71/145

Abstract: The apparatus protects a communication system from an overvoltage due to lightening and other voltage surges. The apparatus includes: lines (L1,L2) (T1,T2) and a ground line (G) formed on a printed circuit board (10); varistors (11,12) connected to a gas glow discharge tube (2) and connected between the lines (L1,L2) and the ground line (G); coil resistors (13,23), with one end of them being connected to the lines (L1,L2), and with the other end of them being wound around variable connection bars (12, 22) of an anisotropic shape memorizing alloy; and the variable connection bars (12,22) and ariable terminals (12a,22a) being connected through the lines (T1,T2) to the ground (G).

Abstract translation: 该装置由于发光和其它电压浪涌而保护通信系统免受过电压。 该装置包括：形成在印刷电路板（10）上的线（L1，L2）（T1，T2）和接地线（G）; 连接到气体辉光放电管（2）并连接在线路（L1，L2）和地线（G）之间的压敏电阻器（11,12） 线圈电阻器（13,23），其一端连接到线路（L1，L2），并且其另一端缠绕在各向异性形状记忆合金的可变连接杆（12,22）上; 并且可变连接杆（12,22）和有利的端子（12a，22a）通过线（T1，T2）连接到地（G）。

公开(公告)号：KR200006507Y1

公开(公告)日：1970-02-26

申请号：KR2019690003335

申请日：1969-08-02

Applicant: 한국과학기술연구원

Inventor： 현경호 ,  오명환 ,  이광원

IPC: H04M1/58 ,  H04B1/00

公开(公告)号：KR100397864B1

公开(公告)日：2003-09-19

申请号：KR1020000053217

申请日：2000-09-07

Applicant: 한국과학기술연구원

Inventor： 문성욱 ,  심태석 ,  오명환

IPC: B81C1/00

CPC classification number: B81C3/002 ,  B81C2203/058

Abstract: A method of aligning microstructures using guides, which enables an align bonding technique, which is a technique in the Micro Electro Mechanical System (MEMS) field, with a cheap microscope of low power. In a system including upper and lower structures having different patterns, array guides combined to four sides of the upper structure, and align guides positioned at four sides of the lower structure to form walls, which are regularly spaced apart, the method is to align the upper and lower structures with lowering the array guide into an align portion formed between the array guide and the align guide. Though a 3D (3-dimensional) pattern such as a membrane structure or a trench structure made by a minute surface micro machining is formed at the structure, this method facilitates alignment without damage of the 3D pattern and without an expensive align device.

Abstract translation: 一种使用导向装置对准微结构的方法，其使得对准结合技术成为微电子机械系统（MEMS）领域中的技术，其具有低功耗的便宜显微镜。 在包括具有不同图案的上部和下部结构的系统中，阵列导向器结合到上部结构的四侧，并且定位在下部结构的四侧的导向器以形成规则地间隔开的壁，方法是对准 上部结构和下部结构，其中阵列引导件降低到在阵列引导件和对齐引导件之间形成的对齐部分中。 尽管通过微小表面微加工制成的诸如膜结构或沟槽结构的3D（三维）图案形成在该结构处，但是该方法便于对准而不损坏3D图案并且没有昂贵的对准装置。

公开(公告)号：KR100292682B1

公开(公告)日：2001-07-12

申请号：KR1019970045605

申请日：1997-09-03

Applicant: 한국과학기술연구원

Inventor： 최우범 ,  오명환 ,  주병권

IPC: H01L29/02

Abstract: PURPOSE: An electrostatic heat junction method of a semiconductor substrate is provided to adhere one silicon substrate to the other silicon substrate or one silicon substrate to a glass substrate under a low temperature and a low voltage by using an electron beam deposition device having a high depositing speed. CONSTITUTION: A power supply portion(2) is used for applying a supply voltage to an N type silicon substrate(1) and a silicon substrate(2) including a glass film. A heating portion(4) is used for heating the silicon substrate(2) including the glass film according to a control operation of a thermal control portion(5). The N type silicon substrate(1) and the silicon substrate(2) including the glass film are adhered to each other by applying the voltage and the heat the N type silicon substrate(1) and the silicon substrate(2) including the glass film.

公开(公告)号：KR1020000051878A

公开(公告)日：2000-08-16

申请号：KR1019990002580

申请日：1999-01-27

Applicant: 한국과학기술연구원

Inventor： 이윤희 ,  주병권 ,  오명환

IPC: H05B33/10

CPC classification number: H05B33/22 ,  H05B33/10

Abstract: PURPOSE: A device using a tip-shaped reflector and its manufacturing method are provided to reflect the edge emission in an electroluminescent display device. CONSTITUTION: An electroluminescent display device comprises a tip-shaped reflector(10), a lower insulating layer(20), a luminescence layer(30), an upper insulator layer(40), and a rear electrode layer(50). The tip-shaped reflector is selected from the group consisting of Si, poly-Si, Mo, Cr, Ta W and Ti. The luminescence layer is selected from a group consisting of ZnS, SrS, CaS, CaGa2S4, SrGaS4 and BaGa2S4. The upper and lower insulator layers are selected from the group consisting of SiOxNy, SiO2, Si3N4, TiO2, BaTa2O6, Al2O3, BaTiO3 and SrTiO3. The method of forming the device comprises the steps of: growing an oxide film on the base substrate; patterning by using the oxide film; etching the silicon substrate to make the tip-shaped reflector; stacking a lower insulating layer, a luminescence layer, an upper insulator layer, a rear electrode layer in sequence on the reflector layer; and removing the layers stacked on the reflector layer by the lift off technology.

Abstract translation: 目的：提供一种使用尖端反射器的装置及其制造方法，以反映电致发光显示装置中的边缘发射。 构成：电致发光显示装置包括尖端反射器（10），下绝缘层（20），发光层（30），上绝缘体层（40）和后电极层（50）。 尖状反射体选自Si，Poly-Si，Mo，Cr，TaW和Ti。 发光层选自ZnS，SrS，CaS，CaGa2S4，SrGaS4和BaGa2S4。 上，下绝缘体层选自SiO x N y，SiO 2，Si 3 N 4，TiO 2，BaTa 2 O 6，Al 2 O 3，BaTiO 3和SrTiO 3。 形成器件的方法包括以下步骤：在基底衬底上生长氧化物膜; 通过使用氧化膜图案化; 蚀刻硅衬底以制造尖端形反射器; 在反射层上依次堆叠下绝缘层，发光层，上绝缘体层，后电极层; 并通过剥离技术去除堆叠在反射器层上的层。