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公开(公告)号：KR1020120126339A
公开(公告)日：2012-11-21
申请号：KR1020110044051
申请日：2011-05-11
Applicant: 한국과학기술연구원
IPC: B01J37/34 , B01J37/02 , B01J23/755 , B01J19/08
CPC classification number: B01J37/349 , B01J21/04 , B01J23/40 , B01J23/42 , B01J23/70 , B01J35/006 , C01B3/326 , C01B2203/0261 , C01B2203/107 , C01B2203/1082 , C01B2203/1211 , C23C14/48 , Y02P20/52
Abstract: PURPOSE: A manufacturing method of nanoparticle complex catalyst by plasma ion implantation and a manufacturing method of the same are provided to increase the surface area of an catalyst due to the small size of catalytic components. CONSTITUTION: A manufacturing method of nanoparticle complex catalyst by plasma ion implantation includes the following steps: plasma ions of solid elements functioning as catalytic components are generated in a vacuum bath; and ionized catalytic components are injected into the surface of a porous carrier. When pulse is applied to a deposition source under low average power, pulse direct current power is applied to the deposition source to generate the plasma ions of the solid elements.
Abstract translation: 目的：提供通过等离子体离子注入的纳米颗粒复合催化剂的制造方法及其制造方法，以增加由于催化组分的小尺寸而导致的催化剂的表面积。 构成：通过等离子体离子注入制造纳米颗粒复合催化剂的方法包括以下步骤：在真空浴中产生用作催化组分的固体元素的等离子体离子; 并将离子化的催化组分注入多孔载体的表面。 当在低平均功率下将脉冲施加到沉积源时，将脉冲直流电力施加到沉积源以产生固体元素的等离子体离子。
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公开(公告)号：KR101164092B1
公开(公告)日：2012-07-12
申请号：KR1020100038634
申请日：2010-04-26
Applicant: 한국과학기술연구원
Abstract: 본 발명은 Fe
2 O
3 , Rh 및 담체를 포함하는, 탄화수소의 부분 산화 개질 촉매, 상기 촉매를 탄화수소계 연료와 접촉시켜 상기 탄화수소를 부분 산화 개질하는 것을 포함하는 수소의 제조 방법 및 상기 촉매를 이용한 탄화수소의 부분 산화 개질 방법에 관한 것이다.-
公开(公告)号：KR1020010091517A
公开(公告)日：2001-10-23
申请号：KR1020000013317
申请日：2000-03-16
Applicant: 한국과학기술연구원
IPC: C25C1/12
CPC classification number: Y02P10/236
Abstract: PURPOSE: An apparatus for electrolyzing high purity electrolytic copper cathode is provided to manufacture a commercially mass produced electrolytic copper cathode having a purity of 99.99% into the high purity electrolytic copper cathode having a purity of 99.9999% through the electrolytic refining process for only one time. CONSTITUTION: The apparatus for electrolyzing high purity electrolytic copper cathode comprises a cartridge(3) having a porous wall surface mounted between the anode(2) and the cathode(6) of a commercial electrolytic copper cathode; and a copper material having a large specific surface area which is filled into the cartridge, wherein the electrolyte eluted from the anode is advanced to the cathode(6) by passing through the cartridge filled with the copper material and a diaphragm(5), wherein the copper material is one or more materials selected from the group consisting of copper fine wire and copper powder, wherein the apparatus further comprises an infusion hole for infusing an inert gas into the cartridge, and wherein a pH of an electrolytic solution during electrolysis is constantly maintained so that it is the same as the initial pH.
Abstract translation: 目的：提供一种用于电解高纯度电解铜阴极的设备，通过电解精炼工艺仅将一次纯度为99.9999％的纯度为99.9999％的纯度为99.99％的纯度为99.99％的商业批量生产的纯度为99.99％的电解铜阴极 。 构成：用于电解高纯度电解铜阴极的装置包括：具有安装在商业电解铜阴极的阳极（2）和阴极（6）之间的多孔壁表面的盒（3） 以及填充到盒中的具有大的比表面积的铜材料，其中从阳极洗脱的电解液通过穿过填充有铜材料的盒和隔膜（5）而前进到阴极（6），其中 所述铜材料是选自铜细线和铜粉末的一种或多种材料，其中所述装置还包括用于将惰性气体注入所述盒中的浸渍孔，并且其中电解期间电解液的pH恒定 保持其与初始pH相同。
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Patent Agency Ranking
公开(公告)号：KR102093819B1
公开(公告)日：2020-03-26
申请号：KR1020180107886
申请日：2018-09-10
Applicant: 한국과학기술연구원
IPC: G10L21/0272 , G10L25/30 , G10L19/025
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公开(公告)号：KR1020140016404A
公开(公告)日：2014-02-07
申请号：KR1020140000779
申请日：2014-01-03
Applicant: 한국과학기술연구원
Abstract: The present invention relates to a method for manufacturing a porous thin film structure by selectively removing a specific element using a dry etching method after a thin film is formed using two or more elements and a porous thin film structure manufactured by the method. By composing the entire process for manufacturing a porous thin film structure of the dry process, the present invention can manage a process more convenient than a wet process, such as an electrodepositing method or a selective melting method, can reduce environmental pollution, and enables mass production. Also, the present invention easily controls porosity and maintains the constant porosity. Thus, the present invention can manufacture the mesoporous thin film structure having excellent reproducibility as a sensor.
Abstract translation: 本发明涉及一种多孔薄膜结构的制造方法，其特征在于，在使用2种以上的元素形成薄膜后，通过使用干蚀刻法选择性地去除特定的元素，以及通过该方法制造的多孔薄膜结构体。 通过构成干法制造多孔薄膜结构的整个方法，本发明可以处理比诸如电沉积方法或选择性熔融方法的湿法更方便的方法可以减少环境污染，并且使质量 生产。 此外，本发明容易控制孔隙率并保持恒定的孔隙率。 因此，本发明可以制造作为传感器具有优异的再现性的介孔薄膜结构。
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公开(公告)号：KR1020140015890A
公开(公告)日：2014-02-07
申请号：KR1020120081953
申请日：2012-07-26
Applicant: 한국과학기술연구원
CPC classification number: C23C18/44 , C23C18/1608 , C23C18/165 , C23C18/32 , C23C18/34 , C23C18/36 , C23C18/38 , Y10T428/31678
Abstract: The present invention relates to an eleectroless deposition (ELD) for forming a metal conductive layer on insulator substrates including glass and polymers. The present invention uses a dry evaporation like arc plasma deposition (APD) or sputtering, for forming adhesive layer and catalyst layer on the substrate and for forming a metal thin film by the ELD. According to the specification of the present invention, complicated preprocesses which are performed in the ELD process, can be remarkably reduced, and the adhesiveness of the plated metal thin film can be increased. [Reference numerals] (AA) Forming adhesive layer on substrate (dry evaporation); (BB) Forming catalyst layer (Dry evaporation); (CC) Electroless plating; (DD) Metal thin film
Abstract translation: 本发明涉及一种用于在包括玻璃和聚合物的绝缘体基底上形成金属导电层的无电解沉积（ELD）。 本发明使用诸如电弧等离子体沉积（APD）或溅射的干蒸发，用于在基板上形成粘合剂层和催化剂层，并通过ELD形成金属薄膜。 根据本发明的说明书，可以显着地减少在ELD工艺中执行的复杂的预处理，并且可以提高电镀金属薄膜的粘附性。 （标号）（AA）在基材上形成粘合剂层（干蒸发）; （BB）成型催化剂层（干蒸发）; （CC）无电镀; （DD）金属薄膜
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