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公开(公告)号：KR100170182B1
公开(公告)日：1999-03-20
申请号：KR1019940031733
申请日：1994-11-29
Applicant: 한국전자통신연구원
CPC classification number: G02F1/1362 , G02F1/13336
Abstract: 본 발명은 대형 평판 디스플레이 제조방법에 관한 것으로, 특히 측면 접합방법을 이용하여 대면적화를 구현한 측면접합을 이용한 대면적 평판 디스플레이 제조방법에 관한 것이다. 이러한 본 발명은 현재의 확보된 박막트랜지스터 기술을 이용하여 대화면을 구현할 수 있는 제품기술을 측면접합이라는 전혀 새로운 방법으로 실현한 것으로, 박막트랜지스터 단위패널(2)을 접착제를 이용하여 지지용 유리기판(4) 위에 접합하고, 그 단위 패널의 측면끼리 상기 접착제에 의해 측면접합공정을 수행하여 대면적 박막트랜지스터 패널을 제작한다. 그 후, 상기 제작된 대면적 박막트랜지스터 패널을 공통전극 패널과 결합시켜 대면적 평판 디스플레이를 제조한다.
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公开(公告)号：KR1019920010696B1
公开(公告)日：1992-12-12
申请号：KR1019890011950
申请日：1989-08-22
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: The device is used for cooling hot exhaust gas in low- pressure CVD coating device, which is necessary for depositing silicon insulating film in manufacturing semiconductor elements. The device comprises main body (1) having inlet/outlet flanges (1a)(1b) for absorbing or discharging exhaust gas; sealed liquid nitrogen container (3) having inlet (3a) and outlet (3b) and fixed at upper panel (2) on the main body; copper-made spiral coil tube (4) for flowing cooling water; o-ring (6) inserted between the upper panel (2) and lower panel (5).
Abstract translation: 该装置用于冷却在制造半导体元件中沉积硅绝缘膜所需的低压CVD涂覆装置中的热废气。 该装置包括具有用于吸收或排出废气的入口/出口凸缘（1a）（1b）的主体（1） 密封的液氮容器（3），其具有入口（3a）和出口（3b）并固定在主体上的上板（2） 用于流动冷却水的铜制螺旋盘管（4） O形环（6）插入在上面板（2）和下面板（5）之间。
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公开(公告)号：KR1019910000274B1
公开(公告)日：1991-01-23
申请号：KR1019870014927
申请日：1987-12-24
Applicant: 한국전자통신연구원
IPC: H01L21/223
Abstract: The system is for depositing the polysilicon thin film safety and making the system maintenance easy. The silan(SiH4) and nitrogen gases are provided through two main pipes (1,2) so that the system is applicable to any type of the gas injectors adapted to the horizontal tube type reactor depositing the uniform polysicon. An air valve (4) for sequence control is positioned in front of a mass flow regulator (3) so that the mass flow is controlled fast in precision. A nitrogen, a bypass, and an exhaust lines are connected to the lines (1,2) to improve the safety and maintenance of the mass flow regulator. Also, a normal open air valve (14) and a manual valve (25) are installed to clean the reactor automatically in case of the power off.
Abstract translation: 该系统用于沉积多晶硅薄膜的安全性，使系统维护变得容易。 硅烷（SiH4）和氮气通过两个主管（1,2）提供，使得该系统适用于适用于沉积均匀多晶硅的水平管式反应器的任何类型的气体注入器。 用于顺序控制的空气阀（4）位于质量流量调节器（3）的前面，使得质量流量被精确地控制。 氮气，旁路和排气管线连接到管线（1,2），以改善质量流量调节器的安全和维护。 而且，在断电的情况下，安装有普通的露天阀（14）和手动阀（25）以自动清洁电抗器。
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Patent Agency Ranking
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公开(公告)号：KR1019920004962B1
公开(公告)日：1992-06-22
申请号：KR1019880017968
申请日：1988-12-30
IPC: H01L21/20
Abstract: The evacuation system for vapor deposition of the metallic thin film i.e. tungsten or tengsten silicide, safely evacuates the posionous gas generated from the vapor deposition. The system comprises a heating tape tube (6), connected to a shock absorbing tube (1) of a reaction vessel (A), U-shaped tube (2) and a valve (3), for eliminating non-reactive/explosive SiH4 gas; a gas deoxidation trap (4) filled with stainless steel pieces for eliminating non-reactive/corrosive WF6 gas; a gas absorption trap (5) filled with zeolite for absorbing moisture or H2 gas molecules.
Abstract translation: 用于气相沉积金属薄膜（即钨或矽化钨）的抽空系统安全地排出由气相沉积产生的气泡。 该系统包括与反应容器（A）的减震管（1），U形管（2）和阀（3）连接的加热带管（6），用于消除无反应/爆炸的SiH 4 加油站; 气体脱氧阱（4）填充不锈钢件，用于消除无反应/腐蚀性WF6气体; 填充有用于吸收水分或H2气体分子的沸石的气体吸收阱（5）。
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公开(公告)号：KR100041668B1
公开(公告)日：1991-05-09
申请号：KR1019870014927
申请日：1987-12-24
Applicant: 한국전자통신연구원
IPC: H01L21/223
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