公开(公告)号：KR101380897B1

公开(公告)日：2014-04-02

申请号：KR1020120136559

申请日：2012-11-28

Applicant: 한국화학연구원

Inventor： 박보근 ,  김창균 ,  정택모 ,  전동주 ,  김효숙 ,  송정인 ,  정석종

IPC: C07F9/90 ,  C23C16/30

CPC classification number: C07F9/908 ,  C23C16/305

Abstract: The present invention relates to an antimony precursor denoted by chemical formula 1. The antimony precursor is a precursor which includes sulfur and does not require the addition of separate sulfur for the production of a thin film, and enables users to produce a high quality antimony thin film by having improved thermal stability and volatility. In chemical formula 1: R1 and R2 are independently a C1-C10 linear or branched alkyl group; R3 and R4 are independently a C1-C10 linear or branched alkyl or fluoroalkyl group; and n is a number selected from 1-3.

Abstract translation: 本发明涉及由化学式1表示的锑前体。锑前体是包含硫的前体，并且不需要添加分开的硫用于生产薄膜，并且能够使用户生产高质量的锑薄 膜具有改善的热稳定性和挥发性。 在化学式1中：R1和R2独立地为C1-C10直链或支链烷基; R3和R4独立地为C1-C10直链或支链烷基或氟代烷基; 并且n是选自1-3的数字。