公开(公告)号：US10162272B2

公开(公告)日：2018-12-25

申请号：US15240781

申请日：2016-08-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Martin Jacobus Johan Jak ,  Hendrik Jan Hidde Smilde ,  Te-Chih Huang ,  Victor Emanuel Calado ,  Henricus Wilhelmus Maria Van Buel ,  Richard Johannes Franciscus Van Haren

IPC: G06F7/20 ,  G03F7/20

Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.

公开(公告)号：US20180129139A1

公开(公告)日：2018-05-10

申请号：US15808874

申请日：2017-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Aiqin JIANG ,  Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Hans Van Der Laan ,  Bart Visser ,  Martin Jacobus Johan Jak

IPC: G03F7/20 ,  G05B19/406

CPC classification number: G03F7/70516 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70633 ,  G03F7/70683 ,  G05B19/406 ,  G05B2219/45028 ,  H01L22/12 ,  H01L22/20

Abstract: A method including obtaining a fit of data for overlay of a metrology target for a patterning process as a function of a stack difference parameter of the metrology target; and using, by a hardware computer, a slope of the fit (i) to differentiate a metrology target measurement recipe from another metrology target measurement recipe, or (ii) calculate a corrected value of overlay, or (iii) to indicate that an overlay measurement value obtained using the metrology target should be used, or not be used, to configure or modify an aspect of the patterning process, or (iv) any combination selected from (i)-(iii).

公开(公告)号：US20160061589A1

公开(公告)日：2016-03-03

申请号：US14835504

申请日：2015-08-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

IPC: G01B11/14

CPC classification number: G01B11/14 ,  G03F7/70633 ,  G03F7/70683

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构 并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。

公开(公告)号：US11650047B2

公开(公告)日：2023-05-16

申请号：US17314469

申请日：2021-05-07

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Vasco Tomas Tenner ,  Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Patrick Warnaar ,  Grzegorz Grzela ,  Martin Jacobus Johan Jak

IPC: G01B11/25 ,  G03F7/20 ,  G02B27/42 ,  G03H1/00 ,  G03H1/04

CPC classification number: G01B11/2536 ,  G02B27/4233 ,  G02B27/4272 ,  G03F7/705 ,  G03F7/7065 ,  G03F7/7085 ,  G03F7/70508 ,  G03F7/70633 ,  G03H1/0005 ,  G03H1/0443 ,  G03H2001/0445

Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

公开(公告)号：US11300883B2

公开(公告)日：2022-04-12

申请号：US16135197

申请日：2018-09-19

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan Jak ,  Simon Gijsbert Josephus Mathijssen ,  Kaustuve Bhattacharyya ,  Won-Jae Jang ,  Jinmoo Byun

IPC: G03F7/20

Abstract: A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.

公开(公告)号：US10831109B2

公开(公告)日：2020-11-10

申请号：US15839285

申请日：2017-12-12

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan Jak ,  Kaustuve Bhattacharyya

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L23/544

Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

公开(公告)号：US10718604B2

公开(公告)日：2020-07-21

申请号：US16507297

申请日：2019-07-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

IPC: G01B11/26 ,  G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US20190064677A1

公开(公告)日：2019-02-28

申请号：US16174398

申请日：2018-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Martin Jacobus Johan Jak ,  Arie Jeffrey den Boef ,  Martin Ebert

IPC: G03F7/20 ,  G03F9/00 ,  G01B11/26 ,  G02B27/42 ,  G02B5/18 ,  G01N21/95 ,  G01N21/47 ,  G01N21/21

CPC classification number: G03F7/70191 ,  G01B11/26 ,  G01N21/21 ,  G01N21/4788 ,  G01N21/9501 ,  G02B5/1819 ,  G02B5/1823 ,  G02B27/4255 ,  G02B27/4272 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  G03F7/7085 ,  G03F9/7049 ,  G03F9/7076

Abstract: A method, involving illuminating at least a first periodic structure of a metrology target with a first radiation beam having a first polarization, illuminating at least a second periodic structure of the metrology target with a second radiation beam having a second different polarization, combining radiation diffracted from the first periodic structure with radiation diffracted from the second periodic structure to cause interference, detecting the combined radiation using a detector, and determining a parameter of interest from the detected combined radiation.

公开(公告)号：US09940703B2

公开(公告)日：2018-04-10

申请号：US15473879

申请日：2017-03-30

Applicant: ASML Netherlands B.V.

Inventor： Murat Bozkurt ,  Martin Jacobus Johan Jak ,  Patricius Aloysius Jacobus Tinnemans

IPC: G06K9/62 ,  G06T7/00 ,  G03F7/20 ,  G06T7/11

CPC classification number: G06T7/0004 ,  G03F7/705 ,  G03F7/70591 ,  G03F7/70633 ,  G06T7/11 ,  G06T2207/10061 ,  G06T2207/20224 ,  G06T2207/30148

Abstract: A property of a target structure is measured based on intensity of an image of the target. The method includes (a) obtaining an image of the target structure; (b) defining a plurality of candidate regions of interest, each candidate region of interest comprising a plurality of pixels in the image; (c) defining an optimization metric value for the candidate regions of interest based at least partly on signal values of pixels within the region of interest; (d) defining a target signal function which defines a contribution of each pixel in the image to a target signal value. The contribution of each pixel depends on (i) which candidate regions of interest contain that pixel and (ii) optimization metric values of those candidate regions of interest.

公开(公告)号：US08742381B2

公开(公告)日：2014-06-03

申请号：US13774612

申请日：2013-02-22

Applicant: ASML Netherlands B.V.

Inventor： Vadim Yevgenyevich Banine ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Wouter Anthon Soer ,  Martin Jacobus Johan Jak

IPC: G03F7/20 ,  B08B7/00 ,  G01J3/10

CPC classification number: G03F7/70925

Abstract: A radiation source includes an uncapped Mo/Si multilayer mirror, and a cleaning apparatus configured to remove a deposition comprising Sn on the uncapped Mo/Si multilayer mirror. The cleaning apparatus is configured to provide a gas comprising one or more of H2, D2 and HD and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the radiation source, to produce hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas, and to supply the hydrogen and/or deuterium radicals and radicals of the one or more additional compounds to the uncapped Mo/Si multilayer mirror to remove at least part of the deposition.

Abstract translation: 辐射源包括未加盖的Mo / Si多层反射镜，以及被配置为去除未开盖的Mo / Si多层反射镜上的包含Sn的沉积物的清洁装置。 清洁装置被配置为在至少部分辐射源中提供包含H2，D2和HD中的一种或多种的气体和一种或多种选自烃化合物和/或硅烷化合物的其它化合物，以产生氢和/或氘 来自气体的一种或多种另外的化合物的自由基和基团，并且将一种或多种另外的化合物的氢和/或氘自由基和自由基供应到未开孔的Mo / Si多层反射镜，以去除至少一部分沉积物 。