公开(公告)号：SG175246A1

公开(公告)日：2011-12-29

申请号：SG2011075637

申请日：2010-05-04

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE ,  CRAMER HUGO ,  HINNEN PAUL

Abstract: A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

公开(公告)号：SG176740A1

公开(公告)日：2012-01-30

申请号：SG2011090974

申请日：2010-07-02

Applicant: ASML NETHERLANDS BV

Inventor： IVANOV VITALII ,  DEN BOEF ARIE ,  BANINE VADIM ,  SCACCABAROZZI LUIGI ,  IOSAD NIKOLAY

IPC: G03F1/00

Abstract: Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.