中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.022 seconds)

    INSPECTION METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD
    1.
    发明申请
    INSPECTION METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD 审中-公开
    检查方法和设备，光刻设备，光刻处理单元和设备制造方法

    公开(公告)号：WO2010076232A3

    公开(公告)日：2010-09-10

    申请号：PCT/EP2009067403

    申请日：2009-12-17

    Applicant: ASML NETHERLANDS BV ,  CRAMER HUGO ,  HINNEN PAUL

    Inventor： CRAMER HUGO ,  HINNEN PAUL

    IPC: G03F7/20

    CPC classification number: G03F7/70683 ,  G03F1/14 ,  G03F1/44 ,  G03F7/70625 ,  G03F7/70641 ,  Y10T428/24802

    Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.

    Abstract translation: 为了确定曝光设备是否输出正确剂量的辐射并且曝光设备的投影系统正确地聚焦辐射，在掩模上使用测试图案以将特定标记印刷到基板上。 该标记可以通过检查装置（例如散射仪）来测量，以确定是否存在焦点，剂量和其他相关特性中的误差。 测试图案被布置为使得通过测量使用掩模曝光的图案的性质可以容易地确定焦点和剂量的变化。 掩模的测试图案被布置为使得其在衬底表面上产生标记图案。 标记图案包含具有至少两个可测量的侧壁角度的结构。 结构的侧壁角度之间的不对称性与曝光设备的曝光辐射的焦点（或散焦）有关。 因此可以通过测量印刷标记图案结构的侧壁角度的不对称来确定散焦程度。

    INSPECTION METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD
    3.
    发明专利
    INSPECTION METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC PROCESSING CELL AND DEVICE MANUFACTURING METHOD 未知

    公开(公告)号：SG172294A1

    公开(公告)日：2011-07-28

    申请号：SG2011045341

    申请日：2009-12-17

    Applicant: ASML NETHERLANDS BV

    Inventor： CRAMER HUGO ,  HINNEN PAUL

    Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.

    INSPECTION METHOD FOR LITHOGRAPHY
    5.
    发明专利
    INSPECTION METHOD FOR LITHOGRAPHY 未知

    公开(公告)号：SG175246A1

    公开(公告)日：2011-12-29

    申请号：SG2011075637

    申请日：2010-05-04

    Applicant: ASML NETHERLANDS BV

    Inventor： DEN BOEF ARIE ,  CRAMER HUGO ,  HINNEN PAUL

    Abstract: A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

    INSPECTION APPARATUS AND ASSOCIATED METHOD AND MONITORING AND CONTROL SYSTEM.
    6.
    发明专利
    INSPECTION APPARATUS AND ASSOCIATED METHOD AND MONITORING AND CONTROL SYSTEM. 未知

    公开(公告)号：NL2006322A

    公开(公告)日：2011-09-20

    申请号：NL2006322

    申请日：2011-03-01

    Applicant: ASML NETHERLANDS BV

    Inventor： CRAMER HUGO ,  TINNEMANS PATRICIUS

    IPC: G03F7/20 ,  G01N21/47

    Abstract: A method, a lithographic apparatus, and a computer-readable medium provide a model of a metrology tool to determine a measurement error and/or covariance of particular parameters, such as the critical dimension and the sidewall angle, of a number of targets, such as gratings. The model can include at least one measurement error source. The method can include using a metrology tool to measure each target and using the model to determine the measurement error of the measured parameters of the particular target when measured by said metrology tool. The value of the measured parameter along with the corresponding measurement error is then determined in the metrology tool output for each particular target, and can be used in exposure focus and dose control in a lithographic process.

Patent Agency Ranking