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    Lithography apparatus and device manufacturing method
    1.
    发明专利
    Lithography apparatus and device manufacturing method 审中-公开
    LITHOGRAPHY设备和设备制造方法

    公开(公告)号：JP2011129908A

    公开(公告)日：2011-06-30

    申请号：JP2010274157

    申请日：2010-12-09

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： SCACCABAROZZI LUIGI ,  BANINE VADIM YEVGENYEVICH ,  IVANOV VLADIMIR VITALEVITCH ,  YAKUNIN ANDREY MIKHAILOVICH

    IPC: H01L21/027 ,  G03F1/08

    CPC classification number: G03F1/84 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

    Abstract: PROBLEM TO BE SOLVED: To provide a high-speed method of detecting a particle on an arbitrary pattern.
    SOLUTION: A thermal radiation from a mask MA is detected using a system and a method. A debris particle D on the mask MA is heated, but not cooled rapidly like a peripheral mask. Radiations emitted from the particle D and mask MA are different in wavelength because of the resulting temperature difference. Therefore, the thermal radiation is detected to detect presence of the particle D deposited on the mask. When the particle D is detected, the mask MA can be cleaned.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供在任意图案上检测颗粒的高速方法。 解决方案：使用系统和方法检测来自掩模MA的热辐射。 掩模MA上的碎屑颗粒D被加热，但不像外围掩模那样快速冷却。 由于产生的温度差，从粒子D和掩模MA发射的辐射的波长是不同的。 因此，检测热辐射以检测沉积在掩模上的颗粒D的存在。 当检测到颗粒D时，可以清洁掩模MA。 版权所有（C）2011，JPO＆INPIT

    Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing device
    2.
    发明专利
    Radiation source apparatus, lithographic apparatus, method of generating and delivering radiation and method for manufacturing device 有权
    辐射源设备，光刻设备，产生和传送辐射的方法和制造设备的方法

    公开(公告)号：JP2011192989A

    公开(公告)日：2011-09-29

    申请号：JP2011047531

    申请日：2011-03-04

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： STEINHOFF JENS ARNO ,  BANINE VADIM YEVGENYEVICH ,  BRULS RICHARD JOSEPH ,  LOOPSTRA ERIK ROELOF ,  HENDRIK ANTONY JOHANNES NEERHOF ,  VAN DIJK ADRIANUS JOHANNES MARIA ,  YAKUNIN ANDREY MIKHAILOVICH ,  SCACCABAROZZI LUIGI

    IPC: H01L21/027 ,  G03F7/20 ,  H05G2/00

    CPC classification number: G03F7/70916 ,  H05G2/003

    Abstract: PROBLEM TO BE SOLVED: To provide an alternative contaminant trap suitable for an EUV apparatus with a hydrogen or similar atmosphere.
    SOLUTION: A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供适用于具有氢气或类似气氛的EUV设备的替代污染物阱。 解决方案：在EUV辐射源设备中使用污染物阱。 产生EUV辐射束并通过低压气体气氛聚焦成虚拟源点。 EUV辐射在其通过的低压氢气氛中产生等离子体。 当辐射束接近虚拟源点时，包括电极的污染物陷阱位于辐射束内或周围。 DC偏置源连接到电极以产生电场，该电场被定向以偏离由等离子体带负电的光束路径污染物颗粒。 附加的RF电极和/或电离器增强等离子体以增加颗粒的充电。 偏转电极可以用RF偏压短时间操作，以确保增强等离子体的耗散。 版权所有（C）2011，JPO＆INPIT

    Method of detecting particle, and lithography apparatus
    3.
    发明专利
    Method of detecting particle, and lithography apparatus 审中-公开
    检测颗粒的方法和光刻设备

    公开(公告)号：JP2011129911A

    公开(公告)日：2011-06-30

    申请号：JP2010275178

    申请日：2010-12-10

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： SCACCABAROZZI LUIGI ,  BANINE VADIM YEVGENYEVICH ,  WAGNER CHRISTIAN

    IPC: H01L21/027 ,  G03F1/08

    CPC classification number: G01N21/94 ,  G01N2021/95676 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

    Abstract: PROBLEM TO BE SOLVED: To provide a high-speed method of detecting a particle on an arbitrary pattern.
    SOLUTION: A camera 30 detects a radiation from a mask MA to form an image, but a focal plane FP of the image is in front of the mask MA. An arbitrary particle D on the mask MA is put in focus. A pattern on the mask MA, however, is out of focus. Consequently, the presence and position of the particle D on the mask MA having the arbitrary pattern can be detected. The depth of focus of the camera 30 is small and the focal plane FP is not twice as far away from a surface of the patterning device as the depth of focus.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供在任意图案上检测颗粒的高速方法。 解决方案：相机30检测来自掩模MA的辐射以形成图像，但是图像的焦平面FP在掩模MA的前面。 掩模MA上的任意粒子D被聚焦。 然而，掩模MA上的图案不重要。 因此，可以检测出具有任意图案的掩模MA上的颗粒D的存在和位置。 摄像机30的焦点深度小，并且焦平面FP不是与图案形成装置的表面远离焦点深度的两倍。 版权所有（C）2011，JPO＆INPIT

    Inspection method and apparatus
    4.
    发明专利
    Inspection method and apparatus 有权
    检验方法和装置

    公开(公告)号：JP2011043810A

    公开(公告)日：2011-03-03

    申请号：JP2010181487

    申请日：2010-08-16

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： DEN BOEF ARIE JEFFREY ,  BANINE VADIM YEVGENYEVICH ,  WUISTER SANDER FREDERIK ,  SCACCABAROZZI LUIGI

    IPC: G03F1/08 ,  G01N21/956 ,  H01L21/027

    CPC classification number: G01N21/95623

    Abstract: PROBLEM TO BE SOLVED: To provide an inspection method and apparatus capable of eliminating problems of an existing inspection method and apparatus. SOLUTION: In an aspect, an inspection method is disclosed for detecting the presence or absence of a defect on an object comprising a recess having a physical depth. The method includes: a step of directing radiation at the object, the radiation having a wavelength that is substantially equal to twice the optical depth of the recess; a step of detecting radiation that is re-directed by the object or by a defect on the object; and a step of determining the presence or absence of a defect from the re-directed radiation. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供能够消除现有检查方法和装置的问题的检查方法和装置。 解决方案：在一方面，公开了一种用于检测包括具有物理深度的凹部的物体上是否存在缺陷的检查方法。 该方法包括：在物体处引导辐射的步骤，该辐射具有基本上等于凹部的光学深度的两倍的波长; 检测由对象重新引导的辐射或物体上的缺陷的步骤; 以及从重新定向的辐射确定缺陷的存在或不存在的步骤。 版权所有（C）2011，JPO＆INPIT

    GAS-LIQUID PHASE TRANSITION METHOD AND APPARATUS FOR CLEANING OF SURFACES IN SEMICONDUCTOR MANUFACTURING
    5.
    发明申请
    GAS-LIQUID PHASE TRANSITION METHOD AND APPARATUS FOR CLEANING OF SURFACES IN SEMICONDUCTOR MANUFACTURING 审中-公开
    气相液相转移方法及其在半导体制造过程中清洗表面的方法

    公开(公告)号：WO2012024131A2

    公开(公告)日：2012-02-23

    申请号：PCT/US2011047299

    申请日：2011-08-10

    Applicant: RASIRC INC ,  ASML NETHERLANDS BV ,  SPIEGELMAN JEFFREY J ,  HOLMES RUSSELL J ,  ALVAREZ DANIEL ,  SCACCABAROZZI LUIGI ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  CASTELIJNS HENRICUS JOZEF

    Inventor： SPIEGELMAN JEFFREY J ,  HOLMES RUSSELL J ,  ALVAREZ DANIEL ,  SCACCABAROZZI LUIGI ,  DONDERS SJOERD NICOLAAS LAMBERTUS ,  CASTELIJNS HENRICUS JOZEF

    IPC: B08B3/04

    CPC classification number: B08B7/0014 ,  B08B3/00 ,  B08B3/04 ,  B08B3/10 ,  B08B2230/01 ,  G03F1/24 ,  G03F1/82 ,  G03F7/16 ,  G03F7/427 ,  G03F7/70925 ,  H01L21/02052 ,  H01L21/67028

    Abstract: A method (500) for cleaning an article such as a EUV (extreme ultraviolet) lithography reticle is provided. The method includes evacuating a cleaning chamber and loading the article to be cleaned into the cleaning chamber (510); preparing the environment of the chamber (520) by connecting the cleaning chamber to a vapor source while controlling pressure in the cleaning chamber to a predetermined pressure; controlling a temperature of the article relative to a temperature of the vapor source so as to form a liquid film (530) over the article and over particles present on the article; isolating the cleaning chamber from the vapor source; evaporating the liquid film (540) by exposing the cleaning chamber to one or more condensing surfaces whose temperature is lower than that of the article, the evaporating liquid transporting at least a portion of the particles away from the article, which is then unloaded from the chamber (560). The cleaning steps (520) to (540) can be repeated (550) as desired. An electrostatic trap may be provided to capture particles released by the evaporation. The cleaning technique can be used in a lithographic apparatus and in manufacturing a device having critical surfaces, such as a wafer, a semiconductor film, or surface of an apparatus employed in the manufacture of a semiconductor device.

    Abstract translation: 提供了用于清洁诸如EUV（极紫外）光刻掩模版的物品的方法（500）。 该方法包括抽空清洁室并将待清洁的物品装载到清洁室（510）中; 通过在将清洁室中的压力控制到预定压力的同时将清洁室连接到蒸气源来准备室（520）的环境; 控制所述物品相对于所述蒸气源的温度的温度，以便在所述物品上形成液体膜（530）并且在所述物品上存在上述颗粒; 将清洁室与蒸气源隔离; 通过将清洁室暴露于温度低于物品的一个或多个冷凝表面来蒸发液体膜（540），蒸发液体将至少一部分颗粒运送到物品上，然后将其从 室（560）。 清洗步骤（520）至（540）可根据需要重复（550）。 可以提供静电捕获器来捕获通过蒸发释放的颗粒。 清洁技术可以用于光刻设备中，并且可用于制造具有临界表面的器件，例如晶片，半导体膜或用于制造半导体器件的器件的表面。

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