公开(公告)号：KR20180019783A

公开(公告)日：2018-02-26

申请号：KR20187004695

申请日：2014-05-02

Applicant: ASML NETHERLANDS BV

Inventor： BOGAART ERIK ,  BIJNEN FRANCISCUS ,  DEN BOEF ARIE ,  MATHIJSSEN SIMON GIJSBERT JOSEPHUS

IPC: G03F7/20 ,  G01N21/65 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66

CPC classification number: G03F7/70483 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/656 ,  G03F7/70625

Abstract: 기판에는디바이스구조물및 계측구조물(800)이제공된다. 디바이스구조물은하나이상의파장의여기방사선의비탄성산란을나타내는재료를포함한다. 디바이스구조물은하나이상의치수에서충분히작아서비탄성산란의특성이양자구속에의하여크게영향받게하는구조를포함한다. 계측구조물(800)은조성및 치수에있어서디바이스피쳐와유사한디바이스-유사구조물(800b), 및교정구조물(800a)을포함한다. 교정구조물은조성에있어서디바이스피쳐와유사하지만적어도하나의치수에있어서상이하다. 라만분광을구현하는검사장치및 방법을사용하면, 디바이스-유사구조물의치수는디바이스-유사구조물및 교정구조물로부터비탄성적으로산란된방사선의스펙트럼피쳐를비교함으로써측정될수 있다.

Abstract translation: 衬底配备有器件结构和度量结构（800）。 器件结构包括显示一个或多个波长的激发辐射的非弹性散射的材料。 器件结构包括在一个或多个维度上足够小的结构，非弹性散射的特性受量子限制的显着影响。 度量结构（800）包括类似于器件特征和校准结构（800a）的组成和尺寸的器件状结构（800b）。 校准结构与组成装置中的装置特征类似，但在至少一个维度上不同。 使用实施拉曼光谱学的检查设备和方法，可以通过比较来自类似装置的结构和校准结构的非弹性散射辐射的光谱特征来测量装置状结构的尺寸。

公开(公告)号：WO2013124131A3

公开(公告)日：2014-06-26

申请号：PCT/EP2013051878

申请日：2013-01-31

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE

IPC: G03F9/00 ,  G01J3/44 ,  G01N21/55 ,  G03F7/20

CPC classification number: G01J3/4412 ,  G01J3/44 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G02B5/205 ,  G03F7/70591 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7026

Abstract: A spectroscopic scatterometer detects both zero order and higher order radiation diffracted from an illuminated spot on a target grating. The apparatus forms and detects a spectrum of zero order (reflected) radiation, and separately forms and detects a spectrum of the higher order diffracted radiation. Each spectrum is formed using a symmetrical phase grating, so as to form and detect a symmetrical pair of spectra. The pair of spectra can be averaged to obtain a single spectrum with reduced focus sensitivity. Comparing the two spectra can yield information for improving height measurements in a subsequent lithographic step. The target grating is oriented obliquely so that the zero order and higher order radiation emanate from the spot in different planes. Two scatterometers can operate simultaneously, illuminating the target from different oblique directions. A radial transmission filter reduces sidelobes in the spot and reduces product crosstalk.

Abstract translation: 光谱散射仪检测从目标光栅上的照明光点衍射的零级和高阶辐射。 该装置形成和检测零级（反射）辐射的光谱，并分别形成和检测高阶衍射辐射的光谱。 每个光谱使用对称相位光栅形成，以便形成和检测对称的光谱对。 这对光谱可以被平均以获得具有降低的聚焦灵敏度的单个光谱。 比较两个光谱可以产生用于在随后的光刻步骤中改善高度测量的信息。 目标光栅倾斜定向，使得零级和高阶辐射从不同平面中的光点发出。 两个散射仪可以同时操作，从不同的倾斜方向照射目标。 径向传输过滤器可减少现场的旁瓣并减少产品串扰。

公开(公告)号：WO2011107302A3

公开(公告)日：2011-12-15

申请号：PCT/EP2011050246

申请日：2011-01-11

Applicant: ASML NETHERLANDS BV ,  KRUIJT-STEGEMAN YVONNE ,  DEN BOEF ARIE ,  JEUNINK ANDRE ,  WUISTER SANDER

Inventor： KRUIJT-STEGEMAN YVONNE ,  DEN BOEF ARIE ,  JEUNINK ANDRE ,  WUISTER SANDER

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7042

Abstract: A method of determining a position of an imprint template in an imprint lithography apparatus is disclosed. In an embodiment, the method includes illuminating an area of the imprint template in which an alignment mark is expected to be found by scanning an alignment radiation beam over that area, detecting an intensity of radiation reflected or transmitted from the area, and identifying the alignment mark via analysis of the detected intensity.

Abstract translation: 公开了一种确定压印光刻设备中的压印模板的位置的方法。 在一个实施例中，该方法包括通过在该区域上扫描对准辐射束来照射其中预期将找到对准标记的压印模板的区域，检测从该区域反射或透射的辐射的强度，以及识别对准标记 通过分析检测到的强度来标记。

公开(公告)号：WO2013087431A2

公开(公告)日：2013-06-20

申请号：PCT/EP2012074163

申请日：2012-11-30

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE ,  BHATTACHARYYA KAUSTUVE ,  JAK MARTIN ,  KUBIS MICHAEL

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G01B11/24 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  G03F9/7092

Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.

Abstract translation: 公开了一种器件制造方法，以及伴随的检查和光刻设备。 该方法包括在衬底上测量诸如第一覆盖标记的不对称性和在衬底上测量诸如对准标记的不对称性的特性。 在这两种情况下，确定不对称性。 然后使用对准系统确定对准标记在衬底上的位置，并使用该测量位置对准对准标记和衬底的不对称信息。 然后将第二覆盖标记印刷在基底上; 以及使用所确定的所述第一覆盖标记的不对称信息相对于所述第一覆盖标记在所述第二覆盖标记的基板上测量的横向覆盖。

公开(公告)号：WO2013029893A2

公开(公告)日：2013-03-07

申请号：PCT/EP2012064755

申请日：2012-07-27

Applicant: ASML NETHERLANDS BV ,  DE JAGER PIETER ,  BLEEKER ARNO ,  DEN BOEF ARIE ,  LOOPSTRA ERIK ,  PANDEY NITESH

Inventor： DE JAGER PIETER ,  BLEEKER ARNO ,  DEN BOEF ARIE ,  LOOPSTRA ERIK ,  PANDEY NITESH

IPC: G03F7/20

CPC classification number: G03F7/70291 ,  G03F7/70391 ,  G03F7/704 ,  G03F7/70525 ,  G03F7/70675

Abstract: A lithographic system has a lithographic apparatus, an inspection system and a controller. The lithographic apparatus includes a projection system configured to project a radiation beam onto a layer of material on or above a substrate. The inspection system is configured to inspect a pattern formed on the substrate. The pattern is formed on the substrate by application of the radiation beam. The controller is configured to control the lithographic apparatus to form a pattern based on data from an inspection by the inspection system of a previously exposed pattern.

Abstract translation: 光刻系统具有光刻设备，检查系统和控制器。 光刻设备包括投影系统，该投影系统配置成将辐射束投影到基底上或上方的材料层上。 检查系统被配置为检查形成在基板上的图案。 通过施加辐射束在衬底上形成图案。 控制器被配置为基于来自检查系统对先前曝光的图案的检查的数据来控制光刻设备以形成图案。

公开(公告)号：WO2013152878A3

公开(公告)日：2014-02-27

申请号：PCT/EP2013052384

申请日：2013-02-07

Applicant: ASML HOLDING NV ,  ASML NETHERLANDS BV

Inventor： KREUZER JUSTIN ,  DEN BOEF ARIE ,  MATHIJSSEN SIMON

IPC: G03F9/00 ,  G02B19/00

CPC classification number: G01B11/14 ,  F25D3/06 ,  F25D11/003 ,  F25D23/006 ,  G01B9/0207 ,  G03F7/70108 ,  G03F9/7069 ,  G03F9/7084 ,  G03F9/7088

Abstract: An apparatus (AS) measures positions of marks (202) on a lithographic substrate (W). An illumination arrangement (940, 962, 964) provides off-axis radiation from at least first and second regions. The first and second source regions are diametrically opposite one another with respect to an optical axis (O) and are limited in angular extent. The regions may be small spots selected according to a direction of periodicity of a mark being measured, or larger segments. Radiation at a selected pair of source regions can be generated by supplying radiation at a single source feed position to a self-referencing interferometer. A modified half wave plate is positioned downstream of the interferometer, which can be used in the position measuring apparatus. The modified half wave plate has its fast axis in one part arranged at 45° to the fast axis in another part diametrically opposite.

Abstract translation: 设备（AS）测量光刻基板（W）上的标记（202）的位置。 照明装置（940，962,964）提供至少第一和第二区域的离轴辐射。 第一和第二源极区域相对于光轴线（O）彼此径向相对并且在角度范围内受到限制。 这些区域可以是根据正被测量的标记的周期方向或较大的段选择的小点。 可以通过将单个源馈送位置处的辐射提供给自参考干涉仪来产生所选择的一对源区域处的辐射。 修改后的半波片位于干涉仪的下游，可用于位置测量装置。 修改后的半波片的一个部分的快轴与另一部分直径相对的快轴成45度。

公开(公告)号：WO2010145951A2

公开(公告)日：2010-12-23

申请号：PCT/EP2010057799

申请日：2010-06-03

Applicant: ASML NETHERLANDS BV ,  DEN BOEF ARIE

Inventor： DEN BOEF ARIE

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F9/7046 ,  G03F9/7065 ,  G03F9/7088 ,  G03F9/7092

Abstract: In order to improve overlay measurement, product marker gratings on a substrate are measured in a lithographic apparatus by an alignment sensor using scatterometry. Then information relating to the transverse profile of the product marker grating, such as its asymmetry, is determined from the measurement. After printing an overlay marker grating on a resist film, the lateral overlay of the overlay marker grating with respect to the product marker grating is measured by scatterometry and using the determined asymmetry information in combination with a suitable process model. The alignment sensor data may be used to first reconstruct the product grating and this information is fed forward to the scatterometer that measures the stack of product and resist grating and light scattered by the stack is used for reconstruction of a model of the stack to calculate overlay. The overlay may then, optionally, be fed back to the lithographic apparatus for correction of overlay errors.

Abstract translation: 为了改善覆盖测量，通过使用散射测量的对准传感器在光刻设备中测量衬底上的产品标记光栅。 然后，从测量确定与产品标记光栅的横向轮廓相关的信息，例如其不对称性。 在抗蚀剂膜上印刷覆盖标记光栅之后，通过散射法测量覆盖标记光栅相对于产品标记光栅的横向覆盖，并且使用所确定的不对称信息与合适的工艺模型相结合。 对准传感器数据可以用于首先重建产品光栅，并且将该信息向前馈送到测量产品堆叠并抵抗光栅的散射仪，并且由堆叠散射的光用于重建堆叠的模型以计算叠加 。 然后，覆盖层可以可选地被反馈到光刻设备以校正重叠误差。

公开(公告)号：SG178368A1

公开(公告)日：2012-04-27

申请号：SG2012009551

申请日：2010-08-05

Applicant: ASML NETHERLANDS BV

Inventor： SMILDE HENDRIK ,  DEN BOEF ARIE ,  COENE WILLEM ,  BLEEKER ARNO ,  KOOLEN ARMAND ,  PELLEMANS HENRICUS ,  PLUG REINDER

Abstract: A metrology apparatus is arranged to illuminate a plurality of targets with an off-axis illumination mode. Images of the targets are obtained using only one first order diffracted beam. Where the target is a composite grating, overlay measurements can be obtained from the intensities of the images of the different gratings. Overlay measurements can be corrected for errors caused by variations in the position of the gratings in an image field.

公开(公告)号：SG11201804232QA

公开(公告)日：2018-06-28

申请号：SG11201804232Q

申请日：2016-12-06

Applicant: ASML NETHERLANDS BV

Inventor： HINNEN PAUL ,  MATHIJSSEN SIMON ,  GOOSEN MAIKEL ,  VAN DER SCHAAR MAURITS ,  DEN BOEF ARIE

IPC: G03F7/20

Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

公开(公告)号：SG195527A1

公开(公告)日：2013-12-30

申请号：SG2013074596

申请日：2009-05-14

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE

Abstract: An overlay measurement apparatus has a polarized light source for illuminating a sample with a polarized light beam and an optical system to capture light that is scattered by the sample. The optical system includes a polarizer for transmitting an orthogonal polarization component that is orthogonal to a polarization direction of the polarized light beam. A detector measures intensity of the orthogonal polarization component. A processing unitise connected to the detector, and is arranged to process the orthogonal polarization component for overlay metrology measurement using asymmetry data derived from the orthogonal polarization component.(Figure 2)