公开(公告)号：WO2007025032A2

公开(公告)日：2007-03-01

申请号：PCT/US2006033058

申请日：2006-08-24

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  LENTH WILFRIED

IPC: H01L33/00 ,  G11B7/125

CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length l c and width b m . Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length l s and width b s of the chip can be selected as convenient values equal to or longer than the waveguide length l c and mesa width b m , respectively. The waveguide length and width are selected so that for a given defect density D, the yield Y D is larger than 50%.

Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构，例如光学存储所需要的，包括提供一种激光器，其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡，以防止有害的光束 扭曲。 半导体激光结构在至少具有下包层，有源层，上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干法蚀刻产生长度为1cm和宽度b m的激光台面。 使用光刻和蚀刻的另一序列来形成在台面顶部具有宽度w的脊结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 可以选择芯片的长度长度和宽度b 作为等于或长于波导长度l1c和台面的方便值 宽度b 。 选择波导长度和宽度，使得对于给定的缺陷密度D，产率Y D大于50％。

公开(公告)号：WO2005107026A3

公开(公告)日：2007-03-01

申请号：PCT/US2005012413

申请日：2005-04-14

Applicant: BINOPTICS CORP ,  BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01S5/00 ,  G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02F1/017 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/22 ,  H01S5/343

CPC classification number: B82Y20/00 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B2006/12104 ,  G02F1/01708 ,  G02F2202/102 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/22 ,  H01S5/34306

Abstract: A laser (40) and electroabsorption modulator (EAM) (44) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure (44). Strong optical coupling between the laser and the EAM (44) is realized by using two 45-degree turning mirrors (52 and 66) to route light vertically from the laser waveguide to the EAM waveguide (44). A directional angled etch process is used to form the two angled facets.

Abstract translation: 激光器（40）和电吸收调制器（EAM）（44）通过蚀刻小面工艺单片集成。 晶片上的外延层包括用于激光结构的第一层和用于EAM结构（44）的第二层。 通过使用两个45度旋转镜（52和66）将光从激光波导垂直地路由到EAM波导（44）来实现激光器和EAM（44）之间的强耦合。 使用定向角蚀刻工艺来形成两个成角度的小平面。

公开(公告)号：WO2008011043A3

公开(公告)日：2008-12-24

申请号：PCT/US2007016235

申请日：2007-07-18

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A

IPC: H01S3/04

CPC classification number: H01S5/0201 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0203 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/22 ,  H01S5/34333

Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500 °C and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.

Abstract translation: 一种用于制造能够发射蓝光的激光器的方法，其中在CAIBE中蚀刻GaN晶片以形成使用超过500℃的温度和超过500V的离子束的激光波导和反射镜，并且其中所述激光波导具有向内成角度的 侧壁。

公开(公告)号：WO2007081549A3

公开(公告)日：2008-04-10

申请号：PCT/US2006049181

申请日：2006-12-26

Applicant: BINOPTICS CORP ,  BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01S5/00 ,  H01L21/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/18 ,  H01S5/40

CPC classification number: H01S5/0262 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/107 ,  H01L31/153 ,  H01L31/1844 ,  H01S5/005 ,  H01S5/0078 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0267 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  Y02E10/544

Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

Abstract translation: 集成在单个芯片的相应外延层上的激光和检测器与片上和/或外部光学器件配合，将由激光器发射的第一波长的光耦合到单个外部设备（例如光纤），并同时耦合光 从外部设备接收到不同波长的检测器以提供双向光子操作。 多个激光器和检测器可以集成在芯片上以提供多个双向通道。 在邻近激光器一端的检测器外延中制造监测光电检测器。

公开(公告)号：WO2006089128A2

公开(公告)日：2006-08-24

申请号：PCT/US2006005668

申请日：2006-02-17

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A

IPC: H01S5/00 ,  H01S3/04

CPC classification number: H01S5/323 ,  G02F1/17 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2214

Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

Abstract translation: 半导体光子器件表面被电介质或金属保护层覆盖。 保护层覆盖整个设备，包括在有源区域附近的面的区域，以防止裸露或未受保护的半导体区域，从而形成非常高可靠性的蚀刻面光子器件。

公开(公告)号：WO2004019460A9

公开(公告)日：2005-01-13

申请号：PCT/US0316246

申请日：2003-06-30

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  SCHREMER JR ALFRED T ,  STAGARESCU CRISTIAN B

IPC: H01S3/083 ,  H01S3/23 ,  H01S5/026 ,  H01S5/10 ,  H01S5/40

CPC classification number: H01S5/1071 ,  H01S5/0265 ,  H01S5/062 ,  H01S5/065 ,  H01S5/1039 ,  H01S5/40 ,  H01S5/50

Abstract: An integrated semiconductor laser device capable of emitting light of selected wavelengths includes multiple ring lasers of different cavity lengths coupled in series or in parallel to a common output to produce an output beam having a wavelength corresponding to the selected ring lasers.

Abstract translation: 能够发射所选波长的光的集成半导体激光器件包括与公共输出串联或并联耦合的不同腔长度的多个环形激光器，以产生具有对应于所选环形激光器的波长的输出光束。

公开(公告)号：EP1735884A4

公开(公告)日：2008-05-14

申请号：EP05744345

申请日：2005-04-14

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC: H01S5/00 ,  G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02F1/017 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/22 ,  H01S5/343

CPC classification number: B82Y20/00 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B2006/12104 ,  G02F1/01708 ,  G02F2202/102 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/22 ,  H01S5/34306

Abstract: A laser (40) and electroabsorption modulator (EAM) (44) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure (44). Strong optical coupling between the laser and the EAM (44) is realized by using two 45-degree turning mirrors (52 and 66) to route light vertically from the laser waveguide to the EAM waveguide (44). A directional angled etch process is used to form the two angled facets.

公开(公告)号：EP1609221A4

公开(公告)日：2006-05-24

申请号：EP04757753

申请日：2004-03-18

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  SCHREMER ALFRED T JR ,  STAGARESCU CRISTIAN B

IPC: H01S3/083 ,  G02B6/12 ,  G02B6/125 ,  H01S3/00 ,  H01S3/08 ,  H01S5/00 ,  H01S5/10 ,  H01S5/125 ,  H01S5/14

CPC classification number: H01S5/0287 ,  G02B6/12004 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/0656 ,  H01S5/1021 ,  H01S5/1071 ,  H01S5/1082 ,  H01S5/125 ,  H01S5/14

Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

公开(公告)号：EP2789060A4

公开(公告)日：2015-11-11

申请号：EP12855851

申请日：2012-12-03

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  GREEN MALCOLM R ,  STAGARESCU CRISTIAN

IPC: H01S5/00 ,  G01R31/26 ,  H01S5/02 ,  H01S5/028 ,  H01S5/22

CPC classification number: H01S5/0014 ,  G01R31/26 ,  G01R31/2635 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34333

Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

公开(公告)号：EP1668749A4

公开(公告)日：2007-11-28

申请号：EP04780438

申请日：2004-08-31

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  MURO KIOFUMI ,  STAGARESCU CRISTIAN B ,  SCHREMER ALFRED T

IPC: H01S5/00 ,  G02B5/28 ,  H01S20060101 ,  H01S3/03 ,  H01S3/08 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/125 ,  H01S5/14 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/0625 ,  B82Y20/00 ,  H01S5/0264 ,  H01S5/06256 ,  H01S5/0655 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1039 ,  H01S5/125 ,  H01S5/141 ,  H01S5/22 ,  H01S5/343 ,  H01S5/34313

Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an A1GalnAs/InP laser cavity (70), a front mirror stack (32) with multiple Fabry-Perot elements (60, 62, 64, 66), a rear DBR reflector (68), and rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets (72, 76), and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer (30) by a two-step lithography and CAIBE process.