公开(公告)号：FR2866954A1

公开(公告)日：2005-09-02

申请号：FR0450354

申请日：2004-02-26

Applicant: CIT ALCATEL

Inventor： SOGAN GLORIA ,  BOUNOUAR JULIEN ,  DESBIOLLES JEAN PIERRE ,  GAURAND ISABELLE

IPC: G01J3/443 ,  G01N21/68 ,  G01N21/71

公开(公告)号：FR2840232A1

公开(公告)日：2003-12-05

申请号：FR0206642

申请日：2002-05-30

Applicant: CIT ALCATEL

Inventor： DESBIOLLES JEAN PIERRE ,  SOGAN GLORIA ,  MUNARI SEBASTIEN ,  VERAN EMMANUELLE

IPC: B01D8/00 ,  F04B37/08

Abstract: The cryogenic trap of the invention comprises, in a hollow body ( 3 ) having an access valve ( 2 ) and an outlet valve ( 6 ), a cold core ( 11 ) associated with a plate ( 13 ) having low thermal inertia and movable between a trapping position in contact with the cold core ( 11 ), and a regeneration position spaced apart from the cold core ( 11 ) and in contact with a heater ring ( 14 ). The plate ( 13 ) is in contact with gases to be trapped, and prevents them from passing to the cold core ( 11 ). Regeneration requires heating only of the plate ( 13 ) carrying the condensed and solidified gases, and it is therefore more rapid.

公开(公告)号：FR2854667B1

公开(公告)日：2006-07-28

申请号：FR0305615

申请日：2003-05-09

Applicant: CIT ALCATEL

Inventor： BERNARD ROLAND ,  DESBIOLLES JEAN PIERRE ,  MUNARI SEBASTIEN ,  ROUSSEAU CLAUDE

IPC: F04B37/14 ,  F04B37/16 ,  F04B49/00 ,  F04B41/06 ,  F04B49/08 ,  F04B49/20 ,  F04C23/00 ,  F04C25/02 ,  F04D19/04 ,  F04D25/16 ,  F04D27/00 ,  G05D16/20

Abstract: The device has two pumps (2,8) coupled to respective control units (3,11) for controlling the speed of the pump. A control valve (4) is coupled to an input of the pump (2) and to a third control unit (5) that controls the control valve. An inert gas injector (6) injects inert gas into the control valve through an injection pipe equipped with an injection valve. The injection valve is controlled by a fourth control unit. The control valve is controlled by the third control unit to compensate the rapid variations of weak amplitudes of pressure and flow of gas in processing chamber. The flow of the inert gas in the inert gas injector is controlled by the fourth control unit to compensate the variation of strong amplitude of the pressure and flow of gas in the processing chamber. The speeds of the two pumps are controlled by the respective control units to compensate the high variations of the amplitude of the conditions of pressure in the processing chamber. Independent claims are also included for the following: (a) a semiconductor fabrication installation or microelectronic mechanical system (b) a process of fabrication of semiconductors or the microelectronic mechanical system.

公开(公告)号：FR2866954B1

公开(公告)日：2006-07-14

申请号：FR0450354

申请日：2004-02-26

Applicant: CIT ALCATEL

Inventor： SOGAN GLORIA ,  BOUNOUAR JULIEN ,  DESBIOLLES JEAN PIERRE ,  GAURAND ISABELLE

IPC: G01J3/443 ,  G01N21/71 ,  G01N21/68

公开(公告)号：FR2878913A1

公开(公告)日：2006-06-09

申请号：FR0452853

申请日：2004-12-03

Applicant: CIT ALCATEL

Inventor： DESBIOLLES JEAN PIERRE ,  PUECH MICHEL

IPC: F04D27/00 ,  F04B37/14 ,  F04D19/04 ,  F04D25/16 ,  H01L21/00 ,  H01L21/205

Abstract: Un dispositif pour établir et contrôler un mélange gazeux à faible pression dans une enceinte à vide (8) comprend au moins une pompe secondaire (9) de type moléculaire, turbomoléculaire ou hybride, suivie d'au moins une pompe primaire (10), avec des premiers moyens de contrôle et d'ajustement (22) tels qu'une vanne de régulation (24) pour contrôler et ajuster la pression gazeuse totale du mélange gazeux dans l'enceinte à vide (8) en fonction d'une consigne de pression totale (27). Le dispositif comprend en outre des seconds moyens de contrôle et d'ajustement (28) tels qu'une seconde vanne de régulation (29a) en aval de la pompe secondaire (9). La seconde vanne de régulation (29a) est pilotée en fonction d'une consigne de pression de refoulement (32) pour modifier la pression de refoulement de la pompe secondaire (9) et adapter ainsi sa capacité de pompage sélectif. Cela permet d'ajuster les proportions des gaz du mélange gazeux dans l'enceinte à vide, indépendamment de la pression totale commandée par la première vanne de régulation (24).

公开(公告)号：FR2863404A1

公开(公告)日：2005-06-10

申请号：FR0314378

申请日：2003-12-09

Applicant: CIT ALCATEL

Inventor： DESBIOLLES JEAN PIERRE ,  PARROCHON JOHANN

IPC: B01D53/00 ,  B08B7/00 ,  C01B23/00 ,  C23C16/44 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/306 ,  B81C1/00 ,  B08B5/00

Abstract: A device for the generation and control of the flow of cleaning agents, adaptable on a process chamber (1) to assure its cleaning by a gaseous cleaning agent, incorporates a recirculation device (9) adapted to set aside the gas leaving the process chamber, filter it and reintroduce it to the process chamber. The recirculation device is structured in a manner that, in all portions of its trajectory in the recirculation device, the recycled gas remains essentially at the low pressure reigning in the process chamber. An independent claim is also included for the cleaning of a process chamber with a gaseous cleaning agent.