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    11.
    发明专利
    未知

    公开(公告)号：FR2737928A1

    公开(公告)日：1997-02-21

    申请号：FR9509878

    申请日：1995-08-17

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： IDA MICHEL ,  BAPTIST ROBERT

    IPC: G03B7/20 ,  G03F7/20 ,  H01J9/02 ,  H01L21/027 ,  G03F1/16 ,  H01J1/30 ,  H01J31/12 ,  B05D3/06

    Abstract: The method involves exposing the photosensitive layer (120) to an atmosphere containing a transparent liquid which does not wet it. A monolayer of microdroplets (121) is formed through which the surface is irradiated with parallel rays (123). On development, a hole (122) is made at the site of each microdroplet. The remainder of the photosensitive layer, insufficiently irradiated to form any impression, serves as a mask for etching of cavities in the underlayers (108,110) by known methods.

    13.
    发明专利
    未知

    公开(公告)号：FR2506019A1

    公开(公告)日：1982-11-19

    申请号：FR8109613

    申请日：1981-05-14

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： BAPTIST ROBERT ,  CHAUVET GERARD

    IPC: G01N23/225 ,  G01N23/22 ,  H01J37/252

    Abstract: The invention relates to an apparatus for determining the electron states of a material. This apparatus comprises an enclosure containing a material, means for producing electrons of energy Ei such, that on then penetrating the material, they acquire an energy Ef below Ei, accompanied by an emission of photons having different wavelengths. The apparatus also comprises another enclosure equipped with a tube entering the vacuum enclosure and provided with an entrance slit and another tube provided with a regulatable exit slit. The apparatus also comprises a grating located in the other enclosure and etched with lines, whilst being able to rotate about an axis parallel to these lines in order to select photons of the same wavelength. The apparatus finally has means for detecting the selected photons. Application to the determination of the forbidden band of a semiconductor.

    14.
    发明专利
    未知

    公开(公告)号：FR2777113A1

    公开(公告)日：1999-10-08

    申请号：FR9804177

    申请日：1998-04-03

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： BAPTIST ROBERT ,  BRUEL MICHEL

    IPC: H01J33/02 ,  H01J33/00 ,  H01J33/04 ,  H01J29/48 ,  H01J1/30

    Abstract: The invention concerns an electron-emitting device comprising: a chamber (8) closed on one side by a membrane (6) capable of being traversed by an electron beam (4); a cathode with at least one microtip (2), for emitting an electron beam (4), characterised in that the cathode microtips are distributed by zones, according to a certain patterns, each zone comprising at least one microtip, the membrane having planar zones (26-1, 26-3) and one or several thicker reinforcing zones (26-2, 26-4, 26-6) separating the planar zones, each microtip zone being opposite a planar zone.

    15.
    发明专利
    未知

    公开(公告)号：FR2775797A1

    公开(公告)日：1999-09-10

    申请号：FR9802622

    申请日：1998-03-04

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： BRUEL MICHEL ,  BAPTIST ROBERT

    IPC: G03F7/20 ,  H01J37/317 ,  G01B9/02 ,  G02B5/28

    Abstract: The invention concerns a method for forming lithographic patterns in a sensitive material layer (14) by subjecting said layer to at least an exposure beam (12). The invention is characterised in that it consists in passing the exposure beam through an interferometer (18) equipped with at least two superposed periodic networks to expose the sensitive material layer according to an interference pattern called "moiré" pattern. The invention is useful, for example, for making electrical or optical components with nanostructures or microstructures.

    16.
    发明专利
    未知

    公开(公告)号：FR2762713A1

    公开(公告)日：1998-10-30

    申请号：FR9705153

    申请日：1997-04-25

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： BAPTIST ROBERT

    IPC: H01J49/42 ,  H01J49/22

    Abstract: The invention concerns a miniature device for generating a transverse multipolar field, or a miniature device for filtering or deviating or focusing charged particles, comprising n longitudinal miniature conducting bars (32, 34, 36, 38), with polygonal cross section, and arranged about a longitudinal axis (AA').

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