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公开(公告)号：DE69525048D1
公开(公告)日：2002-02-21
申请号：DE69525048
申请日：1995-07-27
Applicant: ST MICROELECTRONICS SRL , CONS RIC MICROELETTRONICA
Inventor： LEONARDI SALVATORE , LIZZIO PIETRO , PATTI DAVIDE GIUSEPPE , PALARA SERGIO
IPC: H01L21/331 , H01L29/10 , H01L29/732
Abstract: A vertical PNP transistor integrated in a semiconductor material wafer having an N type substrate (40) and an N type epitaxial layer (41) forming a surface (42). The transistor has a P type buried collector region (43) astride the substrate and the epitaxial layer; a collector sinker (44) insulating an epitaxial tub (45) from the rest of the wafer; a gain-modulating N type buried base region (46; 46'; 46'') astride the buried collector region and the epitaxial tub, and forming a base region with the epitaxial tub; and a P type emitter region in the epitaxial tub. An N type base sinker (47) extends from the surface, through the epitaxial tub to the buried base region. The gain of the transistor may be modulated by varying the extension and dope concentration of the buried base region (46), forming a constant or variable dope concentration profile of the buried base region (46), providing or not a base sinker (47), and varying the form and distance of the base sinker from the emitter region.
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公开(公告)号：DE69325027T2
公开(公告)日：1999-09-16
申请号：DE69325027
申请日：1993-12-02
Applicant: ST MICROELECTRONICS SRL , CONS RIC MICROELETTRONICA
Inventor： SCACCIANOCE SALVATORE , PALARA SERGIO , AIELLO NATALE
IPC: G05F3/30
Abstract: A bandgap voltage reference circuit employs a Vbe voltage multiplier network in a feedback line of an output amplifier of the bandgap reference circuit, thus permitting to independently fix the output voltage that is produced and the temperature coefficient thereof. A voltage reference having a linear negative temperature coefficient in an extended temperature variation range may be obtained, starting from a bandgap reference voltage with a positive temperature coefficient.
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公开(公告)号：DE69325027D1
公开(公告)日：1999-06-24
申请号：DE69325027
申请日：1993-12-02
Applicant: ST MICROELECTRONICS SRL , CONS RIC MICROELETTRONICA
Inventor： SCACCIANOCE SALVATORE , PALARA SERGIO , AIELLO NATALE
IPC: G05F3/30
Abstract: A bandgap voltage reference circuit employs a Vbe voltage multiplier network in a feedback line of an output amplifier of the bandgap reference circuit, thus permitting to independently fix the output voltage that is produced and the temperature coefficient thereof. A voltage reference having a linear negative temperature coefficient in an extended temperature variation range may be obtained, starting from a bandgap reference voltage with a positive temperature coefficient.
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公开(公告)号：DE69316627T2
公开(公告)日：1998-05-07
申请号：DE69316627
申请日：1993-11-29
Applicant: ST MICROELECTRONICS SRL , CONS RIC MICROELETTRONICA
Inventor： PALARA SERGIO , SUERI STEFANO
Abstract: A diagnostic signal, indicative of the reaching of a predefined level, lower than a fixed maximum limit value, by the current flowing through a power transistor, is generated while employing a single comparator of a reference voltage with the voltage present across a sensing resistance, thus preventing problems arising from different offset characteristics of distinct comparators. By the use of current mirrors, the generation of a diagnostic signal when the current reaches a level that can be fixed very close to the limiting value, may be reliably triggered, irrespectively of the offset characteristic of the single comparator employed.
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公开(公告)号：JPH05168146A
公开(公告)日：1993-07-02
申请号：JP11614492
申请日：1992-05-08
Applicant: CONS RIC MICROELETTRONICA
Inventor： PALARA SERGIO , SUERI STEFANO
IPC: H02H7/00 , F02P3/04 , H02H7/12 , H03K3/286 , H03K17/082
Abstract: PURPOSE: To protect a power transistor by providing a first circuit means for prohibiting the operation of a clamp circuit and a second circuit means for maintaining the clamp circuit in an operating state. CONSTITUTION: First circuit means R1, C1, 8, E1, and T1 prohibit the operation of a clamp circuit 1 for a set time interval, from the time when a power device 3 is switched on until a time when the initial underground of the supply voltage of a power supply device generated due to a resonance load L caused by the ignition of a power device 3 is completed. Second circuit means C2 and TP4 maintain the clamp circuit 1 in an operating state during a second underground of a supply voltage, that is generated due to the resonance load L after the ignition of the power device 3, thus protecting a power transistor.
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Patent Agency Ranking
公开(公告)号：JP2745433B2
公开(公告)日：1998-04-28
申请号：JP28455090
申请日：1990-10-24
Applicant: ST MICROELECTRONICS SRL
Inventor： PALARA SERGIO , PAPARO MARIO , PELLICANO' ROBERTO
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公开(公告)号：JP2746545B2
公开(公告)日：1998-05-06
申请号：JP8709695
申请日：1995-04-12
Applicant: ST MICROELECTRONICS SRL
Inventor： PALARA SERGIO
IPC: H05B41/24 , H02M1/08 , H02M7/537 , H03K17/30 , H03K17/567
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公开(公告)号：JPH08107340A
公开(公告)日：1996-04-23
申请号：JP8709695
申请日：1995-04-12
Applicant: ST MICROELECTRONICS SRL
Inventor： PALARA SERGIO
IPC: H05B41/24 , H02M1/08 , H02M7/537 , H03K17/30 , H03K17/567
Abstract: PURPOSE: To obtain three-terminal power electronic equipment whose power consumption does not increase in both small output current and large output current. CONSTITUTION: Three-terminal insulating gate type power electronic equipment which contains a 1st bipolar power transistor T2 and a 2nd insulated gate transistor T1 which form a Darlington pair contains a switching means T3 that is connected between a control electrode B2 of the transistor T2 and a 2nd electrode E2 and a control circuit means H which is connected to the other 2nd electrode S12 of the transistor T1, controls the means T3 and switches between a high conductive state to a low value of current I that flows through a 1st C and a 2nd external terminal E and non-conductive state to a high value of the current I that flows through the 1st C and the terminal E.
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19.发明专利
公开(公告)号：JPH03173169A
公开(公告)日：1991-07-26
申请号：JP30894190
申请日：1990-11-16
Applicant: ST MICROELECTRONICS SRL
Inventor： FERLA GIUSEPPE , PALARA SERGIO
IPC: H01L29/73 , H01L21/331 , H01L21/822 , H01L27/02 , H01L27/04 , H01L27/06 , H01L27/082 , H01L29/732
Abstract: PURPOSE: To stabilize the operational characteristics by entirely covering the projecting end of an insulating pocket with a first grounded metallization part. CONSTITUTION: In order to overcome voltage rise at an insulation pocket P caused by the presence of a parasitic transistor, projecting end of the insulating pocket is covered entirely with a metallization part 21, e.g. a metal polysilicide, preferably a platinum layer. It has a resistance of about 1Ω/square which is about 100 times as low as that of the insulation pocket P. Some region of the insulation pocket Preaches a grounded metal track of aluminum and comes into contact therewith. Since the leakage current of parasitic transistors T3, T4 is passed through a low resistance path and grounded, it causes no voltage rise at the insulation pocket P.
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公开(公告)号：JPH03150612A
公开(公告)日：1991-06-27
申请号：JP28455090
申请日：1990-10-24
Applicant: ST MICROELECTRONICS SRL
Inventor： PALARA SERGIO , PAPARO MARIO , PELLICANO' ROBERTO
Abstract: PURPOSE: To prevent a parasitic component from being triggered by supplying a current to the load so as to maintain the output voltage at a value almost equal to a reference voltage when the output voltage becomes lower than the reference voltage. CONSTITUTION: This circuit is provided with a comparator B for comparing the output voltage Vc with the predetermined reference voltage Vcif. Then, in the case that the output voltage Vc becomes lower than the reference voltage Vcif, the current is supplied to the load so as to maintain the output voltage at the value almost equal to the reference voltage Vcif. In such a manner, a negative voltage peak in the collector of a power unit is evaded and the operation of the control circuit is guaranteed. Thus, the parasitic component is prevented from being triggered.
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