Abstract:
A device for imaging and processing a workpiece having nanometric features through the use of at least one charged particle beam, by both fully automated procedures and manual assistance procedures. The device includes a user interface, including a schedule input entry device and a human operator ready input that can be placed in a first state or a second state and a procedure scheduler, accepting a schedule of procedures, including fully automated procedures and manual assistance procedures, from the schedule input entry device. Additionally, a procedure sequencer that, when the human operator ready input is in the second state, sequences through fully automated procedures until the human operator ready input is placed into the first state, at which time the sequencer begins sequencing the manual assistance procedures, after reaching a safe termination point for the fully automated procedures being performed.
Abstract:
A method and apparatus for altering the orientation of a charged particle beam sample is presented. Embodiments of the method includes providing a first work piece on a sample stage having a sample stage plane, the first work piece including a lamella plane in a first orientation. A sample is milled from the first work piece using an ion beam so that the sample is substantially free from the first work piece. A probe is attached to the sample, the probe including a shaft having a shaft axis, the shaft axis oriented at a shaft angle in relation to the sample stage plane, the shaft angle being non-normal to the sample stage plane. The probe is rotated about the shaft axis through a rotational angle so that the lamella plane is in a second orientation. The sample is attached to or placed on the sample on either the first work piece, the first work piece being the work piece from which the sample was milled, or on a second work piece, the second work piece being a work piece from which the sample was not milled. The sample is thinned using the ion beam to form a lamella, the lamella being oriented in the lamella plane.
Abstract:
An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing is described. Preferred embodiments of the present invention can be used to rapidly navigate to one single bit cell in a memory array or similar structure, for example to characterize or correct a defect in that individual bit cell. High-resolution scanning is used to scan a "strip" of cells on the one edge of the array (along either the X axis and the Y axis) to locate a row containing the desired cell followed by a similar high-speed scan along the located row (in the remaining direction) until the desired cell location is reached. This allows pattern-recognition tools to be used to automatically "count" the cells necessary to navigate to the desired cell, without the large expenditure of time required to image the entire array.
Abstract:
A particle-optical apparatus comprising: - A first source, for generating a first irradiating beam along a first axis; - A second source, for generating a second irradiating beam along a second axis that intersects the first axis at a beam intersection point, the first and second axes defining a beam plane, - A stage assembly (3) for positioning a sample in the vicinity of the beam intersection point, provided with: - A sample table (21) to which the sample can be mounted; - A set of actuators, arranged so as to effect translation of the sample table along directions substantially parallel to an X-axis perpendicular to the beam plane, a Y-axis parallel to the beam plane, and a Z-axis parallel to the beam plane, said X-axis, Y-axis and Z-axis being mutually orthogonal and passing through the beam intersection point, wherein the set of actuators is further arranged to effect: - rotation of the sample table about a rotation axis substantially parallel to the Z-axis, and; - rotation of the sample table about a flip axis substantially perpendicular to the Z-axis, whereby the flip axis can itself be rotated about the rotation axis.
Abstract:
Electron-beam-induced chemical reactions with precursor gases are controlled by adsorbate depletion control. Adsorbate depletion can be controlled by controlling the beam current, preferably by rapidly blanking the beam, and by cooling the substrate (54). The beam (12,13) preferably has a low energy to reduce the interaction volume. By controlling the depletion and the interaction volume, a user has the ability to produce precise shapes.
Abstract:
A particle-optical apparatus comprising: - A first source, for generating a first irradiating beam along a first axis; - A second source, for generating a second irradiating beam along a second axis that intersects the first axis at a beam intersection point, the first and second axes defining a beam plane, - A stage assembly (3) for positioning a sample in the vicinity of the beam intersection point, provided with:
- A sample table to which the sample can be mounted; - A set of actuators, arranged so as to effect translation of the sample table along directions substantially parallel to an X-axis perpendicular to the beam plane, a Y-axis parallel to the beam plane, and a Z-axis parallel to the beam plane, said X-axis, Y-axis and Z-axis being mutually orthogonal and passing through the beam intersection point,
wherein the set of actuators is further arranged to effect: - rotation of the sample table about a rotation axis substantially parallel to the Z-axis, and; - rotation of the sample table about a flip axis substantially perpendicular to the Z-axis,
whereby the flip axis can itself be rotated about the rotation axis.