POWER MODULE ASSEMBLY WITH REDUCED INDUCTANCE

    公开(公告)号:CA2719179C

    公开(公告)日:2013-08-13

    申请号:CA2719179

    申请日:2010-10-28

    Applicant: GEN ELECTRIC

    Abstract: A device is provided that includes a first conductive substrate (102) and a second conductive substrate (104). A first power semiconductor component (118a) having a first thickness can be electrically coupled to the first conductive substrate. A second power semiconductor component (118b) having a second thickness can be electrically coupled to the second conductive substrate. A positive terminal (142) can also be electrically coupled to the first conductive substrate, while a negative terminal (144) can be electrically coupled to the second power semiconductor component, and an output terminal (146) may be electrically coupled to the first power semiconductor component and the second conductive substrate. The terminals, the power semiconductor components, and the conductive substrates may thereby be incorporated into a common circuit loop, and may together be configured such that a width of the circuit loop in at least one direction is defined by at least one of the first thickness or the second thickness.

    COOLING DEVICE FOR A POWER MODULE, AND A RELATED METHOD THEREOF

    公开(公告)号:CA2780658A1

    公开(公告)日:2012-12-24

    申请号:CA2780658

    申请日:2012-06-22

    Applicant: GEN ELECTRIC

    Abstract: A cooling device for a power module having an electronic module disposed on a base plate via a substrate is disclosed. The cooling device includes a heat sink plate having at least one cooling segment. The cooling segment includes an inlet plenum for entry of a cooling medium, a plurality of inlet manifold channels, a plurality of outlet manifold channels, and an outlet plenum. The plurality of inlet manifold channels are coupled orthogonally to the inlet plenum for receiving the cooling medium from the inlet plenum. The plurality of outlet manifold channels are disposed parallel to the inlet manifold channels. The outlet plenum is coupled orthogonally to the plurality of outlet manifold channels for exhaust of the cooling medium. A plurality of millichannels are disposed in the base plate orthogonally to the inlet and the outlet manifold channels. The plurality of milli channels direct the cooling medium from the plurality of inlet manifold channels to the plurality of outlet manifold channels.

    GATE DRIVE CIRCUITRY FOR NON-ISOLATED GATE SEMICONDUCTOR DEVICES

    公开(公告)号:CA2700013C

    公开(公告)日:2012-10-09

    申请号:CA2700013

    申请日:2010-04-15

    Applicant: GEN ELECTRIC

    Abstract: One embodiment is a gate drive circuitry (60) for switching a semiconductor device (62) having a non-isolated input, the gate drive circuitry (60) having a first circuitry (64) configured to turn-on the semiconductor device (62) by imposing a current on a gate of the semiconductor device (62) so as to forward bias an inherent parasitic diode of the semiconductor device (62). There is a second circuitry (66) configured to turn--off the semiconductor device (62) by imposing a current on the gate of the semiconductor device (62) so as to reverse bias the parasitic diode of the semiconductor device (62) wherein the first circuitry (64) and the second circuitry (66) are coupled to the semiconductor device (62) respectively through a first switch and a second switch.

    HEATSINK AND METHOD OF FABRICATING SAME

    公开(公告)号:CA2704870A1

    公开(公告)日:2010-11-29

    申请号:CA2704870

    申请日:2010-05-20

    Applicant: GEN ELECTRIC

    Abstract: A heatsink assembly (10) for cooling a heated device (50) includes a ceramic substrate (64) having a plurality of cooling fluid channels (26) integrated therein. The ceramic substrate (64) includes a topside surface (56) and a bottomside surface (68). A layer of electrically conducting material (62) is bonded or brazed to only one of the topside and bottomside surfaces (66), (68) of the ceramic substrate (64). The electrically conducting material (62) and the ceramic substrate (64) have substantially identical coefficients of thermal expansion.

    BUSBAR ELECTRICAL POWER CONNECTOR
    18.
    发明专利

    公开(公告)号:CA2740681C

    公开(公告)日:2013-10-15

    申请号:CA2740681

    申请日:2011-05-19

    Applicant: GEN ELECTRIC

    Abstract: A dual pole busbar power connector including opposing elements configured to form a slot configured to receive a dual-pole blade therebetween. The slot extends from busbars to opposing element distal ends. The opposing elements each includes: a first contact extending into the slot from the opposing element; and a second contact extending into the slot from the opposing element and disposed farther from a slot busbar end than the first contact. When the dual-pole blade is inserted in the slot the first contact contacts a respective blade element at a location in the slot more proximate the slot busbar end than a slot distal end.

    BUSBAR ELECTRICAL POWER CONNECTOR
    19.
    发明专利

    公开(公告)号:CA2740681A1

    公开(公告)日:2011-12-03

    申请号:CA2740681

    申请日:2011-05-19

    Applicant: GEN ELECTRIC

    Abstract: A dual pole busbar power connector including opposing elements configured to form a slot configured to receive a dual-pole blade therebetween. The slot extends from busbars to opposing element distal ends. The opposing elements each includes: a first contact extending into the slot from the opposing element; and a second contact extending into the slot from the opposing element and disposed farther from a slot busbar end than the first contact. When the dual-pole blade is inserted in the slot the first contact contacts a respective blade element at a location in the slot more proximate the slot busbar end than a slot distal end.

    Fluid cooled heatsink, consisting of an electrical conductor and a ceramic substrate, having near identical coefficients of thermal expansion.

    公开(公告)号:GB2470991A

    公开(公告)日:2010-12-15

    申请号:GB201008668

    申请日:2010-05-25

    Applicant: GEN ELECTRIC

    Abstract: A heatsink assembly 10 for cooling a heated device 50 includes an electrically isolating layer 64 such as a ceramic substrate having a plurality of cooling fluid channels 26 integrated therein. The electrically isolating layer 64 includes a topside surface 66 and a bottomside surface 68. A layer of electrically conducting material 62 is bonded or brazed either to the topside or the bottomside surfaces 66, 68 of the electrically isolating layer 64. The electrically conducting material 62 and the electrically isolating layer 64 have substantially identical coefficients of thermal expansion. Preferably the fluid cooling consists of inlet and outlet plena (20, fig 2), inlet and outlet manifolds (16,18, fig 2) connected to the plena, and cooling fluid channels 26, of micro-channel to milli-channel dimensions in the electrically isolating layer 64 . The electrically isolating layer 64 preferably consists of a ceramic such as AIN, BeO, Si3N4and A12O3. The cooling channels in the electrically isolating layer may be arranged to be continuous or in the form of discreet arrays as shown in fig 5.

Patent Agency Ranking