POWER CIRCUIT PACKAGE AND FABRICATION METHOD

    公开(公告)号:CA2563480C

    公开(公告)日:2016-02-02

    申请号:CA2563480

    申请日:2006-10-12

    Applicant: GEN ELECTRIC

    Abstract: A power circuit package (10) includes a base (12) including a substrate (14), a plurality of interconnect circuit layers (16) over the substrate with each including a substrate insulating layer (18) patterned with substrate electrical interconnects (20), and via connections (22, 24) extending from a top surface of the substrate to at least one of the substrate electrical interconnects (20); and a power semiconductor module (26) including power semiconductor devices (28) each including device pads (30) on a top surface of the respective power semiconductor device and backside contacts (31) on a bottom surface of the respective power semiconductor device, the power semiconductor devices being coupled to a membrane structure (32), the membrane structure including a membrane insulating layer (34) and membrane electrical interconnects (36) over the membrane insulating layer and selectively extending to the device pads, wherein the backside contacts (31) are coupled to selected substrate electrical interconnects or via connections.

    POWER MODULE PACKAGE
    4.
    发明专利

    公开(公告)号:CA2836351A1

    公开(公告)日:2014-06-19

    申请号:CA2836351

    申请日:2013-12-12

    Applicant: GEN ELECTRIC

    Abstract: An integrated power module (10) includes a substantially planar insulated metal substrate (12) having at least one cut-out region (18); at least one substantially planar ceramic substrate (14) disposed within the cut-out region, wherein the ceramic substrate is framed on at least two sides by the insulated metal substrate, the ceramic substrate including a first metal layer (15) on a first side and a second metal layer (17) on a second side; at least one power semiconductor device (20) coupled to the first side of the ceramic substrate; at least one control device (22) coupled to a first surface of the insulated metal substrate; a power overlay (60) electrically connecting the at least one semiconductor power device and the at least one control device; and a cooling fluid reservoir (58) operatively connected to the second metal layer of the at least one ceramic substrate, wherein a plurality of cooling fluid passages (54) are provided in the cooling fluid reservoir.

    POWER MODULE ASSEMBLY WITH REDUCED INDUCTANCE

    公开(公告)号:CA2719179C

    公开(公告)日:2013-08-13

    申请号:CA2719179

    申请日:2010-10-28

    Applicant: GEN ELECTRIC

    Abstract: A device is provided that includes a first conductive substrate (102) and a second conductive substrate (104). A first power semiconductor component (118a) having a first thickness can be electrically coupled to the first conductive substrate. A second power semiconductor component (118b) having a second thickness can be electrically coupled to the second conductive substrate. A positive terminal (142) can also be electrically coupled to the first conductive substrate, while a negative terminal (144) can be electrically coupled to the second power semiconductor component, and an output terminal (146) may be electrically coupled to the first power semiconductor component and the second conductive substrate. The terminals, the power semiconductor components, and the conductive substrates may thereby be incorporated into a common circuit loop, and may together be configured such that a width of the circuit loop in at least one direction is defined by at least one of the first thickness or the second thickness.

    módulo de potência integrado e método de fabricação de um módulo de potência

    公开(公告)号:BR102013032665A2

    公开(公告)日:2016-03-15

    申请号:BR102013032665

    申请日:2013-12-18

    Applicant: GEN ELECTRIC

    Abstract: módulo de potência integrado e método de fabricação de um módulo de potência trata-se de um módulo de potência integrado (10) que inclui um substrato de metal isolado substancialmente plano (12) que tem pelo menos uma região recortada (18); pelo menos um substrato cerâmico substancialmente plano (14) disposto dentro da região de recorte, em que o substrato cerâmico é armado em pelo menos dois lados pelo substrato de metal isolado, sendo que o substrato cerâmico inclui uma primeira camada de metal (15) em um primeiro lado e uma segunda camada de metal (17) em um segundo lado pelo menos um dispositivo semicondutor de potência (20) acoplado ao primeiro lado do substrato cerâmico; pelo menos um dispositivo de controle (22) acoplado a uma primeira superfície do substrato de metal isolado; um revestimento de potência (60) que conecta eletricamente o pelo menos um dispositivo de potência de semicondutor e o pelo menos um dispositivo de controle; e um reservatório de fluido de resfriamento (58) conectado de modo operacional à segunda camada de metal do pelo menos um substrato cerâmico, em que uma pluralidade de passagens de fluido de resfriamento (54) é fornecida no reservatório de fluido de resfriamento.

    9.
    发明专利
    未知

    公开(公告)号:BRPI1004830A2

    公开(公告)日:2013-02-19

    申请号:BRPI1004830

    申请日:2010-10-19

    Applicant: GEN ELECTRIC

    Abstract: A device is provided that includes a first conductive substrate (102) and a second conductive substrate (104). A first power semiconductor component (118a) having a first thickness can be electrically coupled to the first conductive substrate. A second power semiconductor component (118b) having a second thickness can be electrically coupled to the second conductive substrate. A positive terminal (142) can also be electrically coupled to the first conductive substrate, while a negative terminal (144) can be electrically coupled to the second power semiconductor component, and an output terminal (146) may be electrically coupled to the first power semiconductor component and the second conductive substrate. The terminals, the power semiconductor components, and the conductive substrates may thereby be incorporated into a common circuit loop, and may together be configured such that a width of the circuit loop in at least one direction is defined by at least one of the first thickness or the second thickness.

    POWER MODULE ASSEMBLY WITH REDUCED INDUCTANCE

    公开(公告)号:CA2719179A1

    公开(公告)日:2011-04-30

    申请号:CA2719179

    申请日:2010-10-28

    Applicant: GEN ELECTRIC

    Abstract: A device is provided that includes a first conductive substrate (102) and a second conductive substrate (104). A first power semiconductor component (118a) having a first thickness can be electrically coupled to the first conductive substrate. A second power semiconductor component (118b) having a second thickness can be electrically coupled to the second conductive substrate. A positive terminal (142) can also be electrically coupled to the first conductive substrate, while a negative terminal (144) can be electrically coupled to the second power semiconductor component, and an output terminal (146) may be electrically coupled to the first power semiconductor component and the second conductive substrate. The terminals, the power semiconductor components, and the conductive substrates may thereby be incorporated into a common circuit loop, and may together be configured such that a width of the circuit loop in at least one direction is defined by at least one of the first thickness or the second thickness.

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