公开(公告)号：DE10144894A1

公开(公告)日：2002-05-23

申请号：DE10144894

申请日：2001-09-12

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  MITSUI MASARU ,  MITSUI HIDEAKI

IPC: B32B17/06 ,  C03C17/22 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027 ,  G03F1/14

Abstract: A thermal treatment of a translucent film is carried out at a 15 deg C after forming the translucent film on a transparent substrate. The translucent film has a thin film of nitrogen, metal and silicon as main components. Independent claims are included for the following: (1) Photo mask manufacturing method; (2) Pattern transcription method; (3) Mask blank; (4) Photo mask; (5) Method of manufacturing half tone type phase shaft mask; and (6) Half tone type shift mask.

公开(公告)号：JP2010038930A

公开(公告)日：2010-02-18

申请号：JP2008197960

申请日：2008-07-31

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI ,  MITSUI MASARU

IPC: G02F1/1368 ,  G03F1/50 ,  G03F1/58 ,  G03F1/68 ,  G03F1/80

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask, capable of avoiding the problems that may occur when a light-shielding film and a light semi-translucent film located close to each other are exposed to an etching liquid.
SOLUTION: Provided is a multi-level grayscale photomask, wherein a light semi-translucent film that partially transmits exposure light and a light-shielding film that blocks exposure light, are provided, in a random order, on a transparent substrate; and a light-transmitting part that transmits exposure light, a light semi-translucent part that partially transmits exposure light and a light-shielding part that blocks exposure light, are formed, by respectively patterning the light semi-translucent film and the light-shielding film through wet etching, wherein at least one of the light-shielding film and the light semi-translucent film is made of a non-conductive material, or a layer with a given thickness, including a surface where these films are in contact with each other, of at least one of the light-shielding film and the light semi-translucent film, is made of a non-conductive material.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种掩模坯料和光掩模，能够避免当彼此靠近的遮光膜和光半透明膜暴露于蚀刻液体时可能发生的问题。 解决方案：提供了一种多级灰度光掩模，其中，以随机顺序在透明基板上提供部分透射曝光光的光半透明膜和阻挡曝光光的遮光膜; 并且通过分别构图所述光半透明膜和所述遮光层来形成透射曝光光的透光部分，部分地曝光曝光的光半透明部分和阻挡曝光光的遮光部分 薄膜，其中所述遮光膜和所述光半透明膜中的至少一个由非导电材料制成，或者具有给定厚度的层，包括这些膜与每个膜接触的表面 遮光膜和光半透明膜中的至少一个的另一个由非导电材料制成。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007334316A

公开(公告)日：2007-12-27

申请号：JP2007124185

申请日：2007-05-09

Applicant: Hoya Corp ,  Hoya Electronics Malaysia Sdn Bhd ,  Hoya株式会社 ,  ホーヤ エレクトロニクス マレーシア センドリアン ベルハッドHoya Electronics Malaysia Sendirian Berhad

Inventor： MITSUI MASARU ,  SANO MICHIAKI

IPC: G03F1/50 ,  G03F1/54

Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask suitable for processes (such as a drawing method and a resist coating method) in a large mask for an FPD (flat panel display) and various conditions (kinds of resists or resist film thickness). SOLUTION: A mask blank for manufacturing the FPD device has at least a light shielding film on a light transmitting substrate, and is used to form a resist film for laser drawing on the light shielding film. The light shielding film is controlled to have the film surface reflectance of 15% or less to the wavelength of laser drawing. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供适用于FPD（平板显示器）的大掩模和各种条件（抗蚀剂种类）中的工艺（例如拉伸方法和抗蚀剂涂布法）的掩模毛坯和光掩模 或抗蚀剂膜厚度）。 解决方案：用于制造FPD器件的掩模板在透光衬底上至少具有遮光膜，并且用于形成用于在遮光膜上进行激光拉制的抗蚀剂膜。 控制光屏蔽膜使激光拉伸波长的膜表面反射率为15％以下。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007212705A

公开(公告)日：2007-08-23

申请号：JP2006031920

申请日：2006-02-09

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU

IPC: G03F1/46 ,  G03F1/48 ,  G03F1/50 ,  G03F1/60

Abstract: PROBLEM TO BE SOLVED: To solve problems caused by a substrate being large in size upon using a large alkali metal-containing glass substrate for a large mask blank for a FPD (flat panel display). SOLUTION: The large alkali metal-containing glass substrate has at least a light shielding film applied on an alkali metal-containing glass substrate in which the alkali metal ion concentration on the substrate surface is lower than the alkali metal ion concentration in the inside part of the substrate. The large mask blank is used for manufacturing an FPD device. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了解决在使用用于FPD的大型掩模板（平板显示器）中使用大的含碱金属的玻璃基板时，尺寸大的基板引起的问题。 解决方案：大的含碱金属的玻璃基板至少具有遮光膜，该屏蔽膜涂覆在含碱金属的玻璃基板上，其中基板表面上的碱金属离子浓度低于碱金属离子浓度 衬底内部。 大面罩坯料用于制造FPD装置。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007199700A

公开(公告)日：2007-08-09

申请号：JP2006348984

申请日：2006-12-26

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI MASARU ,  SANO MICHIAKI

IPC: G02F1/1368 ,  G03F1/50 ,  G03F1/54 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a large mask and a mask blank for FPD suitable for multicolor exposure. SOLUTION: The mask blank for the manufacture of an FPD device, having at least a semi-light transparent film for a gray tone mask having the function of regulating transmission amount provided on a light transparent substrate, is characterized in that the semi-light transparent film for the gray tone mask is a film regulated so that, in a wavelength range at least from (i) line to (g) line radiated from an ultrahigh pressure mercury lamp, the transmittance (that is, semitransmittance) range of the semi-light transparent film is within less than 5%. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供适用于多色曝光的FPD的大掩模和掩模毛坯。 解决方案：用于制造FPD装置的掩模板，其具有至少具有调节透光基板上的透射量的功能的灰色调掩模的半透明膜，其特征在于，半 用于灰度调色剂的光透明膜是调节膜，使得在至少从（i）线到（g）线的波长范围内，超高压汞灯辐射的透射率（即，半导体）的范围 半光透明膜在5％以内。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005316512A

公开(公告)日：2005-11-10

申请号：JP2005217408

申请日：2005-07-27

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： NOZAWA JUN ,  MITSUI MASARU ,  MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/70 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F1/32

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a phase shift mask blank having a light translucent film or a light translucent portion having a predetermined phase angle and transmittance and being superior in film characteristics such as chemical resistance, light resistance and internal stress.
SOLUTION: The method of manufacturing a halftone phase shift mask blank having a light translucent film on a transparent substrate is carried out by sputtering a target containing 70 to 95 mol% silicon and metal in an atmosphere containing nitrogen to form a light translucent film containing nitrogen, metal and silicon and having compressive stress on the transparent substrate, and heat treating the light translucent film at a temperature higher than the baking temperature of a resist film to be formed on the light translucent film, so as to reduce the internal stress of the light translucent film.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供一种制造具有光半透明膜或具有预定相位角和透射率的光半透明部分的相移掩模坯料的方法，并且具有优异的膜特性如耐化学性，耐光性和 内部压力。 解决方案：在透明基板上制造具有光半透明膜的半色调相移掩模坯料的方法通过在包含氮气的气氛中溅射含有70至95摩尔％的硅和金属的靶来进行，以形成光透明 含有氮，金属和硅的膜，并且在透明基板上具有压应力，并且在比半导体膜上形成的抗蚀剂膜的烘烤温度高的温度下对光半透明膜进行热处理，以便减少内部 光半透明膜的应力。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003195479A

公开(公告)日：2003-07-09

申请号：JP2001400378

申请日：2001-12-28

Applicant: HOYA CORP

Inventor： YAMADA TAKAYUKI ,  MITSUI MASARU ,  USHIDA MASAO

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To improve the dimensional accuracy of a halftone material film pattern of a halftone type phase shift mask manufactured by using a blank having a laminated structure of the halftone material film and a light shielding film. SOLUTION: The halftone type phase shift mask blank 1 having the halftone material film 3 on a transparent substrate 1 and the light shielding film consisting of a metallic film 4 and antireflection film 5 formed on the halftone material film 3 is formed by depositing the light shielding film in such a manner that the film thickness thereof attains a range from 50 to 77 nanometers. As a result, the difference in the film stress before and after the removal of the light shielding film is reduced in manufacturing the halftone type phase shift mask. COPYRIGHT: (C)2003,JPO

公开(公告)号：JPH11316454A

公开(公告)日：1999-11-16

申请号：JP6092599

申请日：1999-03-08

Applicant: HOYA CORP

Inventor： MITSUI MASARU ,  OKADA KIMIHIRO ,  SUDA HIDEKI

IPC: H01L21/027 ,  G03F1/32 ,  G03F1/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a producing method of a halftone phase shift mask, having a semitransparent part which is superior in film characteristics such as acid resistance, light resistance, conductivity, refractive index (film thickness), transmittance, phase shift amount and etching selectivity, and to provide a producing method of a phase shift mask blank. SOLUTION: By the producing method of a phase shift mask blank, a transparent substrate 1 is disposed in an atmosphere of gaseous mixture, containing nitrogen, and a semitransparent thin film 3a comprising nitrogen, metal and silicon as the main structural elements, is formed on the transparent substrate 1 by DC sputtering of a mixture target of metal and silicon. The amount of silicon in the mixture target is 70 to 95 mol.%.

公开(公告)号：JPH1115135A

公开(公告)日：1999-01-22

申请号：JP17132297

申请日：1997-06-27

Applicant: HOYA CORP

Inventor： MITSUI MASARU

IPC: G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask which allows patterning with high accuracy and has high acid resistance and reliability and a phase shift mask blank. SOLUTION: The metallic film 12 of the halftone type phase shift mask blank having a transparent substrate 10, a halftone material film 11 laminated on this transparent substrate 10 and the metallic film 12 laminated on this halftone material film 11 is formed of plural metallic films varying in etching rates. The etching grade of the metallic film 12 existing on the transparent substrate 10 side is set higher stepwise or continuously than the etching grade of the metallic film 13 existing on the front surface side.

公开(公告)号：JPH075676A

公开(公告)日：1995-01-10

申请号：JP14499494

申请日：1994-06-27

Applicant: HOYA CORP

Inventor： MITSUI MASARU ,  KOBAYASHI HIDEO

IPC: G03F1/32 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08

Abstract: PURPOSE:To provide a phase shift mask which can be produced while suppressing the generation of microdefects by relatively simple stages and makes possible pattern transfer with high resolution and the phase shift mask blank which is the blank material thereof. CONSTITUTION:Mask patterns formed on a transparent substrate 1 is constituted of light transparent parts 4 which allow the transmission of light of the intensity substantially contributing to exposing and light translucent parts 2 which allow the transmission of light of the intensity not substantially contributing to exposing. The phase of the light passing the light translucent parts 2 and the phase of the light passing the passing the light transparent parts 4 are varied by shifting the phase of the light passing the light translucent parts 2, by which the light beams passing the parts near the boundary parts between the light transparent parts 4 and the light translucent parts 2 are negated with each other so that the contrast of the boundary parts is well maintained. The light translucent parts 2 are constituted of chromium films contg. oxygen and the content of the oxygen in the chromium films contg. the oxygen is specified to 30 to 60atm.%.