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公开(公告)号：AU2029176A
公开(公告)日：1978-06-15
申请号：AU2029176
申请日：1976-12-06
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , BROADIE ROBERT WALLACE , PLISKIN WILLIAM AARON
IPC: H01L21/76 , H01L21/3105 , H01L21/316 , H01L21/331 , H01L21/762 , H01L29/73 , H01L21/82 , H01L21/326 , H01L27/04 , H01L21/22 , H01L21/265 , H01L21/32 , H01L21/20 , H01L21/324 , H01L29/70
Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.
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公开(公告)号：DE2652294A1
公开(公告)日：1977-10-13
申请号：DE2652294
申请日：1976-11-17
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , BROADIE ROBERT WALLACE , PLISKIN WILLIAM AARON
IPC: H01L21/76 , H01L21/3105 , H01L21/316 , H01L21/331 , H01L21/762 , H01L29/73
Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.
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Patent Agency Ranking
公开(公告)号：DE69616645D1
公开(公告)日：2001-12-13
申请号：DE69616645
申请日：1996-04-22
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , DENISON EDWARD VIRGIL , FRIEDMAN JULES DAVID , KAHWATY VINCENT NOEL , KLUGE II
Abstract: A head (10) is provided for reading and writing to tape media (48) along a tape head face. The tape head comprises a plurality of modules, each module comprising a read element (54) and a write element (52) spaced apart and terminating at the tape head face and formed over a substrate (12). The read element comprises a soft film bias layer (24) and a hard film bias layer (25) butted against the SFB layer. The write element comprises two pole tips (14,16) spaced apart by a gap (22). The tape head further includes a plurality of activating conducting coil turns (20) operatively associated with the write element and covered by a cross-linked photoresist and positioned between the gap and one of the pole tips and set back from the tape head face. The tape head has at least one of the following elements: (a) a wear shield (34) between the read element and the write element for limiting wear of the gap between the two pole tips, the wear shield being grounded for decoupling read and write functions of the tape head, for allowing same module read/servo/write functions simultaneously, and for grounding static charge from the tape media; (b) a layer of electrically conductive and corrosion-resistant material (62), such as rhodium, under the hard film bias layer to reduce its resistance; and (c) a non-activating dummy coil turn (120,220) closer to the pole tips than the activating coil turns for defining a forward termination of the cross-linked photoresist (38a) between the activating coil turns and the tape head face to thereby provide improved ease of processability.
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公开(公告)号：DE69213558T2
公开(公告)日：1997-03-13
申请号：DE69213558
申请日：1992-04-30
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , DENISON EDWARD BIRGIL , KAHWATY VINCENT NOEL , STEVING GERALD
Abstract: An interleaved bi-directional magnetic tape head for contact recording has a stripe poletip 30 in the form of a thin film of a soft magnetic material deposited onto a magnetic ferrite substrate 22. A second thin film polepiece 40 is deposited over a gap region 26. A closure block 24 of a non-magnetic ceramic encloses the layers together with leveling insulation layers 32, 34 and deposited activating conductor turns 36. The stripe poletip extends for a distance just short of the first conductor turn and provides a balancing of the saturation moment of the pole pieces and provides for better recording capability, especially when operating in a trailing magnetic ferrite mode.
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公开(公告)号：DE69012479D1
公开(公告)日：1994-10-20
申请号：DE69012479
申请日：1990-05-21
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , KAHWATY VINCENT NOEL , NIX JAMES LAMAR , SHELLEDY FRANK BOYD
Abstract: A soft film biased magnetoresistive sensor (10) is fabricated to have reduced Barkhausen noise. The magnetic ratio of the film layers (14 and 18) is controlled to be in the range of 1.7 to 1.95 and the optimum bias point is controlled to be in the range of 35 and 41 degrees.
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公开(公告)号：DE3460764D1
公开(公告)日：1986-10-23
申请号：DE3460764
申请日：1984-06-22
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , KLOKHOLM ERIK , MC GUIRE THOMAS ROCHE
Abstract: A magnetic field sensing device employs a magnetoresistive element which exhibits a negative DELTA rho effect ( DELTA rho = rho ||- rho ORTHOGONAL ) when a magnetic field is applied to it to magnetise it to saturation at room temperature. The electrical resistivity rho ORTHOGONAL of the element in a direction perpendicular to the direction of current through the element is greater than the electrical resistivity rho || of the element in a direction parallel to the direction of the electrical current through the element. The magnetoresistive element is formed from a ferromagnetic material containing at least one of Ni; Fe and Co together with Ir in an amount sufficient to cause the element to exhibit negative anisotropic magnetoresistance at room temperature.
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公开(公告)号：DE3068380D1
公开(公告)日：1984-08-02
申请号：DE3068380
申请日：1980-11-20
Applicant: IBM
Inventor： ABOAF JOSEPH ADAM , KLOKHOLM ERIK
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