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    12.
    发明专利
    未知

    公开(公告)号：DE69722462T2

    公开(公告)日：2004-02-19

    申请号：DE69722462

    申请日：1997-08-04

    Applicant: IBM

    Inventor： BONA GIAN-LUCA ,  GERMANN ROLAND ,  OFFREIN BERT JAN ,  SALEMINK HUUB W

    IPC: G02B6/122 ,  G02B6/12 ,  G02B6/26

    Abstract: A singlemode lightwaveguide-coupling element is positioned between an initial waveguide section which there has a basic final width (W0f) and a final waveguide section which there has a basic initial width (Wn+1i) which is bigger than the basic final width (W0f). The lightwave directions of both waveguide sections are inclined at a predetermined total angle (DELTAalpha) towards each other. Starting from the initial waveguide section, the lightwaveguide element comprises intermediate waveguide sections each of which at its end has a lightwave direction which is inclined towards the lightwave direction at its opposite end at an inclination angle (DELTAalphav), such that the sum of all inclination angles equals the predetermined total angle (DELTAalpha).

    BROADENING OF ARRAYED WAVEGUIDE GRATING PASSBAND RESPONSE
    14.
    发明专利
    BROADENING OF ARRAYED WAVEGUIDE GRATING PASSBAND RESPONSE 未知

    公开(公告)号：CA2339777A1

    公开(公告)日：2002-09-02

    申请号：CA2339777

    申请日：2001-03-02

    Applicant: IBM

    Inventor： BONA GIAN-LUCA ,  HORST FOLKERT ,  OFFREIN BERT JAN

    IPC: A61L9/12 ,  H04B10/20 ,  H04J14/02 ,  H04Q3/52

    Abstract: The essential feature is the step of generating a controllable 'dynamic' intensity field profile with a controllable beating pattern in a multimode superposition of different modes, as e.g., a fundamental mode and a higher order mode as e,g., the TEO mode and T E1 mode of an input wavelength entering the input site of an AWG apparatus, whereby said beating pattern is controlled in a fixed, or in variable, predetermined way, as e.g., with a fixed or a wavelength dependent power ratio and beating pattern, for improving the mode overlap in a receiver waveguide associated with an output site of said apparatus. With variable conditions, a lower number of converter units is required. In a 8:1 multiplexer, for example, there is needed just one converter unit at its output. A 1:8 demultiplexer can be obtained by solely reversing the AWG apparatus.

    16.
    发明专利
    未知

    公开(公告)号：DE69418906T2

    公开(公告)日：2000-01-27

    申请号：DE69418906

    申请日：1994-09-15

    Applicant: IBM

    Inventor： BONA GIAN-LUCA ,  GERMANN ROLAND ,  SALEMINK HUUB

    IPC: G02F1/313 ,  C07C233/47 ,  C07C235/12 ,  C07C237/12 ,  C07C323/59 ,  C07D233/88 ,  G02F1/35 ,  G11C21/00 ,  H01S3/10

    Abstract: PCT No. PCT/EP94/03095 Sec. 371 Date Feb. 27, 1997 Sec. 102(e) Date Feb. 27, 1997 PCT Filed Sep. 15, 1994 PCT Pub. No. WO96/08826 PCT Pub. Date Mar. 21, 1996The present invention concerns optical memories. Such an optical memory (30) comprises a data line (31) which is optically coupled via a directional waveguide coupler (33) to a circular memory loop (32). In addition, it comprises a pump line (35), which is employed in order to couple a refresh signal into the loop (32). As in case of the data line, the pump line is coupled via a directional waveguide coupler (34) to the loop (32). The counter propagating refresh light pulse provides for an amplification of the light pulse circulating in the memory loop being doped with Erbium ions. The length L of the memory loop (32) is chosen such that the circulation frequency of the light pulse in said loop (32) is equal to the clock frequency of the optical memory (30). The memory provides for individual manipulation of each stored optical bit.

    17.
    发明专利
    未知

    公开(公告)号：DE69418906D1

    公开(公告)日：1999-07-08

    申请号：DE69418906

    申请日：1994-09-15

    Applicant: IBM

    Inventor： BONA GIAN-LUCA ,  GERMANN ROLAND ,  SALEMINK HUUB

    IPC: G02F1/313 ,  C07C233/47 ,  C07C235/12 ,  C07C237/12 ,  C07C323/59 ,  C07D233/88 ,  G02F1/35 ,  G11C21/00 ,  H01S3/10

    Abstract: PCT No. PCT/EP94/03095 Sec. 371 Date Feb. 27, 1997 Sec. 102(e) Date Feb. 27, 1997 PCT Filed Sep. 15, 1994 PCT Pub. No. WO96/08826 PCT Pub. Date Mar. 21, 1996The present invention concerns optical memories. Such an optical memory (30) comprises a data line (31) which is optically coupled via a directional waveguide coupler (33) to a circular memory loop (32). In addition, it comprises a pump line (35), which is employed in order to couple a refresh signal into the loop (32). As in case of the data line, the pump line is coupled via a directional waveguide coupler (34) to the loop (32). The counter propagating refresh light pulse provides for an amplification of the light pulse circulating in the memory loop being doped with Erbium ions. The length L of the memory loop (32) is chosen such that the circulation frequency of the light pulse in said loop (32) is equal to the clock frequency of the optical memory (30). The memory provides for individual manipulation of each stored optical bit.

    18.
    发明专利
    未知

    公开(公告)号：DE69102263T2

    公开(公告)日：1994-12-08

    申请号：DE69102263

    申请日：1991-03-11

    Applicant: IBM

    Inventor： ROENTGEN PETER DR ,  HEUBERGER WILHELM ,  UNGER PETER DR ,  BONA GIAN-LUCA

    IPC: H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01S5/00 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19 ,  H01L29/73

    Abstract: Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces : the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.

    19.
    发明专利
    未知

    公开(公告)号：DE69102263D1

    公开(公告)日：1994-07-07

    申请号：DE69102263

    申请日：1991-03-11

    Applicant: IBM

    Inventor： ROENTGEN PETER DR ,  HEUBERGER WILHELM ,  UNGER PETER DR ,  BONA GIAN-LUCA

    IPC: H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01S5/00 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19 ,  H01L29/73

    Abstract: Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces : the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.

    SEMICONDUCTOR DEVICE COMPRISING A LAYERED STRUCTURE GROWN ON A STRUCTURED SUBSTRATE
    20.
    发明专利
    SEMICONDUCTOR DEVICE COMPRISING A LAYERED STRUCTURE GROWN ON A STRUCTURED SUBSTRATE 未知

    公开(公告)号：CA2062153A1

    公开(公告)日：1992-09-12

    申请号：CA2062153

    申请日：1992-03-02

    Applicant: IBM

    Inventor： BONA GIAN-LUCA ,  HEUBERGER WILHELM ,  ROENTGEN PETER ,  UNGER PETER

    IPC: H01S5/00 ,  H01L21/20 ,  H01L29/737 ,  H01L33/00 ,  H01L33/16 ,  H01L33/24 ,  H01L33/30 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/025 ,  H01S3/08 ,  H01L21/203

    Abstract: SZ 9-91-002 Semiconductor device (30) such as a laser diode grown on a structured substrate surface having horizontal regions with adjacent inclined sidewall surfaces: the horizontal regions (32o) of standard orientation like (100) or slightly off, the inclined surfaces (32m) misoriented. The layers (33 to 36) forming the device are grown over the structured surface, at least the active layer (34) being of a semiconductor material that assumes ordered or disordered states depending on the orientation or misorientation of the substrate surface. The center section (34a) of the active layer is deposited over a horizontal substrate region (32o), this section thus being in the ordered state and having a lower bandgap energy than terminating sections (34b) grown on inclined substrate regions (32m), therefore having a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap material whereby devices of a buried structure, with strong carrier confinement, and/or with non-absorbing mirrors, allowing high optical power operation, can be realized.

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