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    11.
    发明专利
    未知

    公开(公告)号：DE2364241A1

    公开(公告)日：1974-07-11

    申请号：DE2364241

    申请日：1973-12-22

    Applicant: IBM

    Inventor： CHAUDHARI PRAVEEN ,  CUOMO JEROME JOHN ,  MATTHEWS JOHN WAUCHOPE

    IPC: C30B13/06 ,  C30B1/02 ,  C30B1/08 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/208 ,  B01J17/12

    Abstract: 1393337 Mono-crystalline films INTERNATIONAL BUSINESS MACHINES CORP 15 Nov 1973 [29 Dec 1972] 52952/73 Heading B1S Single crystal films are grown on a substrate by depositing an amorphous film of a crystallizable material on the substrate at a temperature below the crystallization temperature of the material forming the film and heating the film to propagate from a seed crystal a mono-crystalline phase throughout the material of the film. Two or more films of monocrystalline materials may be formed on the substrate. The film may in certain cases be stripped from the substrate. The seed crystal may be a substrate which promotes epitaxial deposition or a portion of such a substrate, or the seed crystal may be formed in situ from a portion of the amorphous film and propogated throughout the remainder of the film by passing a hot zone across the film from the seed crystal. The film may be applied as a pattern to the substrate which may be inert and the seed formed at a peripheral part of the pattern e.g. where it comes to a point The substrate may be a single crystal of Gd 3 Ga 5 O 12 or Sm 3 Ga 5 O 12 with an amorphous portion of SiO 2 , a quartz substrate or a plastic support from which the monocrystalline film can be stripped. The material applied to the substrate may be an amorphous layer of Y 3 Ga 1À1 Fe 3À9 O 12 by sputtering, Y 3 Fe 5 O 12 , Y 3 (GaFe) 5 O 12 , (GdY) 3 (GaFe) 5 O 12 , or amorphous SiO 2 containing boron or phosphorus as a dopant. The heating may be effected by an electron beam. As shown in the Figure a single crystal film is formed on a completely inert substrate 18, by depositing an amorphous film 20 on the substrate in such a pattern that a peripheral portion is pointed and by heating this point a seed crystal 22, is formed which is propagated across and throughout the film by passing a hot zone across the pattern from the seed crystal.

    14.
    发明专利
    未知

    公开(公告)号：AT486368T

    公开(公告)日：2010-11-15

    申请号：AT02787050

    申请日：2002-12-18

    Applicant: IBM

    Inventor： CHAUDHARI PRAVEEN

    IPC: H01L23/12 ,  H01L21/98 ,  H01L23/48 ,  H01L51/00

    Abstract: A method of assembling a circuit includes providing a template, enabling a semiconductor material to self assemble on the template, and enabling self-assembly of a connection between the semiconductor material and the template to form the circuit and a circuit created by self-assembly.

    Aromic beam alignment of liquid crystals
    16.
    发明专利
    Aromic beam alignment of liquid crystals 未知

    公开(公告)号：SG55290A1

    公开(公告)日：1998-12-21

    申请号：SG1997000896

    申请日：1997-03-22

    Applicant: IBM

    Inventor： CHAUDHARI PRAVEEN ,  LACEY JAMES ANDREW ,  LIEN SHUI-CHIN ALAN

    IPC: C08G73/10 ,  G02F1/1337

    Abstract: Liquid crystals on a polymer (eg polyimide) surface are aligned by exposure to a low energy and neutral Argon ion beam. The energy of the incident ions were varied between 75 and 500 eV, the integrated current density from 100 mu A/cm to 500mA/cm , and the angle of incidence over which alignment was measured was between 10 and 80 degrees. The pretilt angle of the liquid crystals could be varied between 0 and 8 degrees, by controlling the processing conditions. Degradation of the polyimide, which leads to charge migration, can be avoided by operating at low accelerating voltages.

    17.
    发明专利
    未知

    公开(公告)号：BR8804157A

    公开(公告)日：1989-03-14

    申请号：BR8804157

    申请日：1988-08-17

    Applicant: IBM

    Inventor： CHAUDHARI PRAVEEN

    IPC: H01B12/00

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