公开(公告)号：GB2584548B

公开(公告)日：2021-03-31

申请号：GB202005406

申请日：2018-09-11

Applicant: IBM

Inventor： YUN SEOG LEE ,  STEPHEN W BEDELL ,  JOEL PEREIRA DE SOUZA ,  DEVENDRA SADANA

IPC: H01M10/04 ,  H01M4/131 ,  H01M4/136 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  H01M4/66 ,  H01M4/78 ,  H01M10/0525 ,  H01M10/058

Abstract: High-capacity (i.e., a capacity of 50 mAh/gm or greater) and high-performance rechargeable batteries are provided that contain a rechargeable battery stack that includes a spalled material structure that includes a cathode material layer that is attached to a stressor material. The cathode material may include a single crystalline that is devoid of polymeric binders. The stressor material serves as a cathode current collector of the rechargeable battery stack.

公开(公告)号：GB2585295A

公开(公告)日：2021-01-06

申请号：GB202013202

申请日：2019-01-15

Applicant: IBM

Inventor： HARIKLIA DELIGIANNI ,  KO-TAO LEE ,  NING LI ,  DEVENDRA SADANA

IPC: A61N5/06

Abstract: Probes include a probe body configured to penetrate biological tissue. High-efficiency light sources are positioned within the probe body. Each high-efficiency light source has a sufficiently intense light output to trigger a light- sensitive reaction in neighboring tissues and has a sufficiently low power output such that a combined heat output of multiple light sources does cause a disruptive temperature increase in the neighboring tissues.

公开(公告)号：GB2580827A

公开(公告)日：2020-07-29

申请号：GB202004615

申请日：2018-09-21

Applicant: IBM

Inventor： JOEL PEREIRA DE SOUZA ,  NING LI ,  YAO YAO ,  DEVENDRA SADANA ,  YUN SEOG LEE

IPC: H01L33/00

Abstract: A semiconductor device is formed using an n-type layer of Zinc Oxide, a p-type layer formed of a narrow bandgap material. The narrow bandgap material uses a group 3A element and a group 5A element. A junction is formed between the n-type layer and the p-type layer, the junction being operable as a heterojunction diode having a rectifying property at a temperature range, the temperature range having a high limit at room temperature.

公开(公告)号：GB2608320A

公开(公告)日：2022-12-28

申请号：GB202213458

申请日：2021-02-17

Applicant: IBM

Inventor： NING LI ,  WANKI KIM ,  STEPHEN BEDELL ,  DEVENDRA SADANA

IPC: G11C11/00 ,  G11C7/00

Abstract: An apparatus includes an analog phase change memory array, including an array of cells addressable and accessible through first lines and second lines. The apparatus includes device(s) coupled to one or more of the first lines. The device(s) is/are able to be coupled to or decoupled from the one or more first lines to compensate for phase change memory resistance drift in resistance of at least one of the cells in the one or more first lines. The apparatus may also include control circuitry configured to send, using the first lines and second lines, a same set pulse through the device(s) to multiple individual phase change memory resistors in the phase change memory array sequentially once every period.

公开(公告)号：GB2581902B

公开(公告)日：2022-04-20

申请号：GB202006963

申请日：2018-11-16

Applicant: IBM

Inventor： NING LI ,  YUN SEOG LEE ,  JOEL PEREIRA DE SOUZA ,  DEVENDRA SADANA

IPC: H01L29/78 ,  G11C11/54 ,  H01M10/0585

Abstract: A semiconductor structure is provided that contains a non-volatile battery which controls gate bias and has increased output voltage retention and voltage resolution. The semiconductor structure may include a semiconductor substrate including at least one channel region that is positioned between source/drain regions. A gate dielectric material is located on the channel region of the semiconductor substrate. A battery stack is located on the gate dielectric material. The battery stack includes, a cathode current collector located on the gate dielectric material, a cathode material located on the cathode current collector, a first ion diffusion barrier material located on the cathode material, an electrolyte located on the first ion diffusion barrier material, a second ion diffusion barrier material located on the electrolyte, an anode region located on the second ion diffusion barrier material, and an anode current collector located on the anode region.

公开(公告)号：GB2587585B

公开(公告)日：2021-08-25

申请号：GB202100140

申请日：2019-06-18

Applicant: IBM

Inventor： JOEL PEREIRA DE SOUZA ,  JOHN COLLINS ,  DEVENDRA SADANA ,  STEPHEN W BEDELL ,  JOHN OTT ,  MARINUS JOHANNES PETRUS HOPSTAKEN

IPC: H01M4/1395 ,  H01M4/38 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/0585

Abstract: Rechargeable lithium-ion batteries that have a high-capacity are provided. The lithium-ion batteries contain an anode structure that is of unitary construction and includes a non-porous region and a porous region including a top porous layer (Porous Region 1) having a first thickness and a first porosity, and a bottom porous layer (Porous Region 2) located beneath the top porous layer and forming an interface with the non-porous region. At least an upper portion of the non-porous region and the entirety of the porous region are composed of silicon, and the bottom porous layer has a second thickness that is greater than the first thickness, and a second porosity that is greater than the first porosity.

公开(公告)号：GB2587585A

公开(公告)日：2021-03-31

申请号：GB202100140

申请日：2019-06-18

Applicant: IBM

Inventor： JOEL PEREIRA DE SOUZA ,  JOHN COLLINS ,  DEVENDRA SADANA ,  STEPHEN W BEDELL ,  JOHN OTT ,  MARINUS JOHANNES PETRUS HOPSTAKEN

IPC: H01M4/1395 ,  H01M4/38 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/0585

Abstract: Rechargeable lithium-ion batteries that have a high-capacity are provided. The lithium-ion batteries contain an anode structure that is of unitary construction and includes a non-porous region and a porous region including a top porous layer (Porous Region 1) having a first thickness and a first porosity, and a bottom porous layer (Porous Region 2) located beneath the top porous layer and forming an interface with the non-porous region. At least an upper portion of the non-porous region and the entirety of the porous region are composed of silicon, and the bottom porous layer has a second thickness that is greater than the first thickness, and a second porosity that is greater than the first porosity.

公开(公告)号：GB2584548A

公开(公告)日：2020-12-09

申请号：GB202005406

申请日：2018-09-11

Applicant: IBM

Inventor： YUN SEOG LEE ,  STEPHEN W BEDELL ,  JOEL PEREIRA DE SOUZA ,  DEVENDRA SADANA

IPC: H01M10/04 ,  H01M4/131 ,  H01M4/136 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  H01M4/66 ,  H01M4/78 ,  H01M10/0525 ,  H01M10/058

Abstract: High-capacity (i.e., a capacity of 50 mAh/gm or greater) and high-performance rechargeable batteries are provided that contain a rechargeable battery stack that includes a spalled material structure that includes a cathode material layer that is attached to a stressor material. The cathode material may include a single crystalline that is devoid of polymeric binders. The stressor material serves as a cathode current collector of the rechargeable battery stack.

公开(公告)号：GB2581902A

公开(公告)日：2020-09-02

申请号：GB202006963

申请日：2018-11-16

Applicant: IBM

Inventor： NING LI ,  YUN SEOG LEE ,  JOEL PEREIRA DE SOUZA ,  DEVENDRA SADANA

IPC: H01L21/822

Abstract: A semiconductor structure is provided that contains a non-volatile battery which controls gate bias and has increased output voltage retention and voltage resolution. The semiconductor structure may include a semiconductor substrate including at least one channel region that is positioned between source/drain regions. A gate dielectric material is located on the channel region of the semiconductor substrate. A battery stack is located on the gate dielectric material. The battery stack includes, a cathode current collector located on the gate dielectric material, a cathode material located on the cathode current collector, a first ion diffusion barrier material located on the cathode material, an electrolyte located on the first ion diffusion barrier material, a second ion diffusion barrier material located on the electrolyte, an anode region located on the second ion diffusion barrier material, and an anode current collector located on the anode region.

公开(公告)号：GB2581742A

公开(公告)日：2020-08-26

申请号：GB202007216

申请日：2018-11-02

Applicant: IBM

Inventor： HARIKLIA DELIGIANNI ,  NING LI ,  KO-TAO LEE ,  DEVENDRA SADANA ,  ROY YU

IPC: A61B5/00

Abstract: Technical solutions are described for implementing an optogenetics treatment using a probe and probe controller are described. A probe controller controls a probe to perform the method that includes emitting, by a light source of the probe, the probe is embeddable in a tissue, a light wave to interact with a corresponding chemical in one or more cells in the tissue. The method further includes capturing, by a sensor of the probe, a spectroscopy of the light wave interacting with the corresponding chemical. The method further includes sending, by the probe, the spectroscopy to an analysis system. The method further includes receiving, by the probe, from the analysis system, adjusted parameters for the light source, and adjusting, by a controller of the probe, settings of the light source according to the received adjusted parameters to emit a different light wave to interact with the corresponding chemical.