公开(公告)号：PL203317B1

公开(公告)日：2009-09-30

申请号：PL36271001

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

公开(公告)号：AT360890T

公开(公告)日：2007-05-15

申请号：AT01000026

申请日：2001-02-22

Applicant: IBM

Inventor： COOLBAUGH DOUGLAS D ,  DUNN JAMES STUART ,  ST ONGE STEPHEN ARTHUR

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/94 ,  H01L29/92

Abstract: A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first conductivity-type; a first polysilicon layer formed on at least said gate oxide layer, said first polysilicon layer being doped with an N or P-type dopant; a dielectric layer formed on said first polysilicon layer; and a second polysilicon layer formed on said dielectric layer, said second polysilicon layer being doped with the same or different dopant as the first polysilicon layer.

公开(公告)号：DE60120897T2

公开(公告)日：2006-12-21

申请号：DE60120897

申请日：2001-09-24

Applicant: IBM

Inventor： COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  ST ONGE STEPHEN ARTHUR

IPC: H01L21/8249 ,  H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8222 ,  H01L21/8248 ,  H01L27/06

Abstract: A method is provided for fabricating a poly-poly capacitor integrated with a BiCMOS process. This includes forming a lower plate electrode of a poly-poly capacitor during deposition of a gate electrode of a CMOS transistor. An upper SiGe plate electrode is then formed during growth of a SiGe base region of a heterojunction bipolar transistor.

公开(公告)号：HU0302872A2

公开(公告)日：2003-12-29

申请号：HU0302872

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LAUZEROTTI LUOIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.