公开(公告)号：AT187016T

公开(公告)日：1999-12-15

申请号：AT88810313

申请日：1988-05-13

Applicant: IBM

Inventor： DAVIDSON ARTHUR ,  DINGER TIMOTHY REA ,  GALLAGHER WILLIAM JOSEPH ,  WORTHINGTON THOMAS KIMBER

IPC: H01F6/06 ,  H01L39/14 ,  H01L39/12

公开(公告)号：DE68908480D1

公开(公告)日：1993-09-23

申请号：DE68908480

申请日：1989-04-15

Applicant: IBM

Inventor： GALLAGHER WILLIAM JOSEPH ,  GIESS EDWARD AUGUST ,  GUPTA ARUNAVA ,  LAIBOWITZ ROBERT BENJAMIN ,  O'SULLIVAN EUGENE JOHN M ,  SANDSTROM ROBERT LEE

IPC: C01G3/00 ,  C01B13/14 ,  C01G1/00 ,  C04B41/89 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/14 ,  H01L39/22 ,  H01L39/24 ,  H01P3/08

公开(公告)号：DE69924655T2

公开(公告)日：2006-01-19

申请号：DE69924655

申请日：1999-02-04

Applicant: IBM

Inventor： ABRAHAM DAVID WILLIAM ,  GALLAGHER WILLIAM JOSEPH ,  TROUILLOUD PHILIP LOUIS

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.

公开(公告)号：DE69924655D1

公开(公告)日：2005-05-19

申请号：DE69924655

申请日：1999-02-04

Applicant: IBM

Inventor： ABRAHAM DAVID WILLIAM ,  GALLAGHER WILLIAM JOSEPH ,  TROUILLOUD PHILIP LOUIS

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.

公开(公告)号：DE3856380T2

公开(公告)日：2000-07-27

申请号：DE3856380

申请日：1988-05-13

Applicant: IBM

Inventor： DAVIDSON ARTHUR ,  DINGER TIMOTHY REA ,  GALLAGHER WILLIAM JOSEPH ,  WORTHINGTON THOMAS KIMBER

IPC: H01F6/06 ,  H01L39/14 ,  H01L39/12

公开(公告)号：ES2139563T3

公开(公告)日：2000-02-16

申请号：ES88810313

申请日：1988-05-13

Applicant: IBM

Inventor： DAVIDSON ARTHUR ,  DINGER TIMOTHY REA ,  GALLAGHER WILLIAM JOSEPH ,  WORTHINGTON THOMAS KIMBER

IPC: H01F6/06 ,  H01L39/14 ,  H01L39/12

公开(公告)号：DE3856380D1

公开(公告)日：1999-12-30

申请号：DE3856380

申请日：1988-05-13

Applicant: IBM

Inventor： DAVIDSON ARTHUR ,  DINGER TIMOTHY REA ,  GALLAGHER WILLIAM JOSEPH ,  WORTHINGTON THOMAS KIMBER

IPC: H01F6/06 ,  H01L39/14 ,  H01L39/12

公开(公告)号：MX169596B

公开(公告)日：1993-07-14

申请号：MX1153688

申请日：1988-05-18

Applicant: IBM

Inventor： WORTHINGTON THOMAS KIMBER ,  DAVIDSON ARTHUR ,  DINGER TIMOTHY REA ,  GALLAGHER WILLIAM JOSEPH

IPC: H01F6/06 ,  H01L39/14 ,  H01F7/22 ,  H01L39/12