公开(公告)号：DE68915763D1

公开(公告)日：1994-07-07

申请号：DE68915763

申请日：1989-09-07

Applicant: IBM

Inventor： GASSER MARCEL ,  LATTA ERNST EBERHARD DR

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S3/025

Abstract: A method for mirror passivation in the fabrication of semiconductor laser diodes. Key of the method are two basic steps : (1) providing a contamination-free mirror facet, followed by (2) in-situ application of a continuous, insulating or low conductive passivation layer which consists of a material that acts as a diffusion barrier for species capable of reacting with the semiconductor and that does not itself react with the mirror surface. The contamination-free mirror surface is obtained by either cleaving in an environment where no initial contamination takes place, or by cleaving in air or mirror etching, with subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

公开(公告)号：CA2043173C

公开(公告)日：1993-09-21

申请号：CA2043173

申请日：1991-05-24

Applicant: IBM

Inventor： BROOM RONALD F ,  GASSER MARCEL ,  HARDER CHRISTOPH S ,  LATTA ERNST E ,  OOSENBRUG ALBERTUS ,  RICHARD HEINZ ,  VETTIGER PETER

IPC: B28D5/00 ,  H01L21/301 ,  H01S5/00 ,  H01S5/02 ,  H01L21/304

Abstract: A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer (11), provided with scribe lines (15) defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands (12, 13) and guiding it around a curved, large radius surface (21) therebyapplying a bending moment. With a moment of sufficient magnitude, individual bars (22) are broken off the wafer as this is advanced, the bars having frontand rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighbouring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

公开(公告)号：DE3267500D1

公开(公告)日：1986-01-02

申请号：DE3267500

申请日：1982-03-12

Applicant: IBM

Inventor： LATTA EBERHARD DR ,  GASSER MARCEL

IPC: H01L39/24 ,  H01L39/22

Abstract: A process for reducing the particle current in the sub-gap range of all-Nb Josephson junctions. The process results in junctions having substantially increased values of Vm. In order to reduce the single particle current, the reaction between the barrier layer oxide and the counter electrode is prevented by additional process steps. After forming the tunnel barrier (4) and before depositing the counter electrode (9), the tunnel barrier surface is covered with a thin, non-continuous layer (5) of a material such as gold which is not reacting with oxygen at process conditions. Subsequently, the non-covered barrier layer surface regions (7) are strongly oxidized thereby forming an oxide layer (8) of sufficient thickness to prevent electron tunneling in these regions.