公开(公告)号：DE2314124A1

公开(公告)日：1973-10-04

申请号：DE2314124

申请日：1973-03-21

Applicant: IBM

Inventor： HEWETT WILLIAM AINSLIE ,  SARATOGA CALIF ,  LEVINE HAROLD A ,  GIPSTEIN EDWARD

IPC: C08F2/00 ,  C08F2/48 ,  C23F1/00 ,  G03F7/039 ,  H01L21/00 ,  H01L21/027 ,  H01L23/29 ,  H05K3/00 ,  B44C1/00

Abstract: Patterns, such as etch resistant resists, masks, are formed by degradation of a t-butyl methacrylate polymer coating, or film, under an electron beam in a predetermined pattern, followed by removal with a solvent, of the electron degraded product in the exposed areas.

公开(公告)号：CA1041347A

公开(公告)日：1978-10-31

申请号：CA224581

申请日：1975-04-11

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  HEWETT WILLIAM A

IPC: H01L21/027 ,  C08G75/00 ,  C08G75/22 ,  G03F7/039 ,  G03C1/495

Abstract: TERPOLYMERS FOR ELECTRON BEAM POSITIVE RESISTS Electron beam positive resists are formed from terpolymers of (a) an alpha olefin, (b) sulfur dioxide, and (c) a compound selected from the group consisting of cyclopentene, bicycloheptene and methyl methacrylate. The terpolymers have the particular unexpected advantage of being resistant to cracking of the films.

公开(公告)号：DE2641624A1

公开(公告)日：1977-03-24

申请号：DE2641624

申请日：1976-09-16

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：FR2299665A1

公开(公告)日：1976-08-27

申请号：FR7538564

申请日：1975-12-09

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  NEED OMAR U III ,  MOREAU WAYNE M

IPC: B41C1/00 ,  C08J3/28 ,  G03F7/039 ,  H01L21/027 ,  G03C1/495 ,  C08F220/10 ,  H01L21/312

Abstract: 1515330 Electron sensitive polymers INTERNATIONAL BUSINESS MACHINES CORP 5 Dec 1975 [29 Jan 1975] 49960/75 Heading G2C Positive resist masks are formed by exposing a supported film of a non-crosslinked polymeric material to electron beam radiation in a predetermined pattern so as to degrade the polymeric material in the exposed areas, and removing the degraded products in the exposed areas. The polymeric material used is selected from (1) polyalkyl methacrylates and copolymers of alkyl methacrylates with halogen - or cyano - containing monomers and (2) post halogenated derivatives of the polymers in (1). The coated polymers may be baked prior to exposure and also after development.

公开(公告)号：FR2295467A1

公开(公告)日：1976-07-16

申请号：FR7533875

申请日：1975-10-29

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE M ,  NEED OMAR U III

IPC: H05K3/00 ,  G03F7/039 ,  H01L21/027 ,  G03G17/00 ,  H01L21/312

Abstract: Very sensitive electron beam positive resists have been obtained using films of polymeric methyl methacrylate containing acetate polymers.

公开(公告)号：FR2286414A1

公开(公告)日：1976-04-23

申请号：FR7525147

申请日：1975-08-07

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED OMAR U III

IPC: H05K3/00 ,  G03F7/039 ,  H01L21/027 ,  G03C1/72 ,  G03F7/00

Abstract: Production of an image on a high-resolution radiation sensitive positive resist material, by comprises (1) applying a film of a poly-(alpha-lower-alkenyl ketone) on a substrate (2) irradiating in a pre-determined pattern, and (3) treating the film with a solvent for the breakdown product formed in the irradiated areas. Used in mfr. of integrated printed circuits, printing plates etc. Post hardening of the photo-resist image is not required. The image has a high resolution, below the film thickness e.g. 0.5 um lines with the same separation can be obtained in 1 um films.

公开(公告)号：CA966344A

公开(公告)日：1975-04-22

申请号：CA155732

申请日：1972-10-31

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  HEWETT WILLIAM A

公开(公告)号：CA879174A

公开(公告)日：1971-08-24

申请号：CA879174D

Applicant: IBM

Inventor： HEWETT WILLIAM A ,  GIPSTEIN EDWARD

公开(公告)号：CA1072243A

公开(公告)日：1980-02-19

申请号：CA261430

申请日：1976-09-17

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  C08F20/52 ,  G03C1/495 ,  B41M3/08

Abstract: POSITIVE RESISTS CONTAINING DIMETHYLGLUTARIMIDE UNITS A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：CH600393A5

公开(公告)日：1978-06-15

申请号：CH1174076

申请日：1976-09-16

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03F7/02

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.