公开(公告)号：GB2585319B

公开(公告)日：2021-06-30

申请号：GB202017218

申请日：2019-05-02

Applicant: IBM

Inventor： KATSUYUKI SAKUMA ,  JOHN KNICKERBOCKER ,  STEPHEN JOHN HEISIG ,  JOHN JEREMY RICE ,  GADDI BLUMROSEN

IPC: G06F3/01

Abstract: Writing recognition using a wearable pressure sensing device includes receiving pressure measurement data from a pressure sensor disposed upon a body part of a user. The pressure measurement data is indicative of a change in pressure of the body part due to an interaction of the body part with a medium indicative of a writing gesture by the user. A start boundary and end boundary for each of a plurality of writing symbols is detected based upon the pressure measurement data. At least one feature of the pressure measurement data associated with the plurality of writing symbols is extracted. A symbol pattern is detected based upon the extracted features, and at least one letter is detected based upon the symbol pattern. A word is detected based upon the detected at least one letter.

公开(公告)号：GB2562941A

公开(公告)日：2018-11-28

申请号：GB201812268

申请日：2016-12-02

Applicant: IBM

Inventor： JOHN KNICKERBOCKER ,  JEFFREY GELORME ,  LI-WEN HUNG ,  PAUL ANDRY ,  BING DANG ,  CORNELIA TSANG YANG

IPC: H01L21/673

Abstract: Various embodiments process semiconductor devices (202, 302). In one embodiment, a release layer (210) is applied to a handler (204). The release layer (210) comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer (210). The additive comprises, for example, a 355nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600nm to 740nm. The at least one singulated semiconductor device (202) is bonded to the handler (204). The at least one singulated semiconductor device (202) is packaged while it is bonded to the handler (204). The release layer (210) is ablated by irradiating the release layer (210) through the handler (204) with a laser (214). The the at least one singulated semiconductor device (202) is removed from the transparent handler (204) after the release layer (210) has been ablated.

公开(公告)号：GB2550791A

公开(公告)日：2017-11-29

申请号：GB201713533

申请日：2016-02-15

Applicant: IBM

Inventor： EVAN GEORGE COLGAN ,  MONTY MONTAGUE DENNEAU ,  JOHN KNICKERBOCKER

IPC: H01L23/367 ,  G06F1/20 ,  H01L23/473

Abstract: A semiconductor structure includes a substrate with cooling layers, cooling channels, coolant inlets and outlets in fluid communication with the cooling channels, and a device layer on the cooling layers with one or more connection points and a device layer area. The device layer thermal coefficient of expansion is substantially equal to that of the cooling layers. A plurality of laminate substrates are disposed on, and electrically attached to, the device layer. The laminate substrate thermal coefficient of expansion differs from that of the device layer, each laminate substrate is smaller than the device layer portion to which it is attached, and each laminate substrate includes gaps between sides of adjacent laminate substrates. The laminate substrates are not electrically or mechanically connected to each other across the gaps therebetween and the laminate substrates are small enough to prevent warping of the device, interconnection and cooling layers due to thermal expansion.