公开(公告)号：DE3779253D1

公开(公告)日：1992-06-25

申请号：DE3779253

申请日：1987-08-18

Applicant: IBM

Inventor： AMENDOLA ALBERT ,  KUMAR ANANDA HOSAKERE ,  VANCE THOMAS RAY

IPC: H01L21/3205 ,  H05K3/04 ,  H05K3/20 ,  H05K3/22 ,  H05K3/32 ,  H05K3/40 ,  H01L23/52 ,  H01L21/48 ,  H01L21/90 ,  H03K3/22

Abstract: Disclosed is a method for repairing opens (12) in thin film conductor lines (11) on a substrate (10), preferably a multilayered ceramic substrate. An unpatterned repair metal film (20) is placed over a general area of open defects (12) in conductive lines (11) on a substrate (10). Preferably, this metal is placed over the conductive lines and opens therein by decal transfer. The assembly is then heated to cause diffusion bonding between the repair metal (20) and conductive lines (11), but not between the repair metal (20) and substrate (10). After diffusion bonding, the structure has metal bridges formed across any open defects covered by the repair film and also between adjacent conductive lines. The area of repair is then subjected to ultrasonic energy in a liquid ambient for a time at least long enough to remove metal bridges between adjacent conductive lines, but less than that required to remove repair metal bridges over the opens in the conductive lines. The resultant structure has metal bridges spanning opens in the conductive lines, and no metal bridges between adjacent conductive lines.

公开(公告)号：DE3576098D1

公开(公告)日：1990-03-29

申请号：DE3576098

申请日：1985-10-15

Applicant: IBM

Inventor： HERRON LESTER WYNN ,  KUMAR ANANDA HOSAKERE

IPC: H01L23/12 ,  C23C10/04 ,  H01L21/388 ,  H01L21/48 ,  H05K1/03 ,  H05K1/09 ,  H05K3/24

Abstract: In a maskless metal cladding process for plating an existing metallurgical pattern (13), a protective layer (16) is utilized to isolate those areas of underlying metallurgy on which additional metal plating is not desired. The layer acts as an isolation barrier to protect the underlying metallurgy from deposition and subsequent diffusion of the heavy metal overlay (17). The composition of the protective layer is selected as one having sufficient mechanical integrity to withstand process handling and support the gold overlay and having the thermal integrity to withstand the high temperatures reached during metal sputtering and diffusion processes. The isolation barrier layer has an organic component as a binder which thermally decomposes, either in a heating step before metal deposition or during the diffusion cycle, leaving no carbonaceous residue but leaving an inert, inorganic standoff to support the metal. After diffusion of the metal, the remaining inorganic standoff layer, overlying metal and any undiffused metal remaining on the non-patterned substrate is easily removed by a standard technique, such as ultrasonics.

公开(公告)号：DE3378288D1

公开(公告)日：1988-11-24

申请号：DE3378288

申请日：1983-03-10

Applicant: IBM

Inventor： KUMAR ANANDA HOSAKERE

IPC: H01L23/12 ,  H01L21/48 ,  H01L23/498 ,  H05K1/09 ,  H05K3/04 ,  H05K3/14 ,  H05K3/24

Abstract: The method comprises a maskless technique for plating a protective metal layer (5) on an existing metallurgical pattern (2, 4) supported on a dielectric substrate (1) by blanket coating said metal layer (5) over said substrate (1) and said pattern (2, 4), heating to diffuse the metal of said layer (5) into said pattern (2, 4) and cooling to spall the metal layer (5) on the non-patterned portion of the substrate surface, and mechanically removing the metal layer (5) from the non-patterned substrate surfaces. Optionally, the metal layer (5) can also be blanket coated with a passivating metal film (10) with interdiffusion therebetween at the interface during the noted heating step. … The method is useful for forming protected metal coatings on refractive metal conductive patterns on ceramic substrate carriers employed for mounting semiconductor devices thereon.

公开(公告)号：DE2901172A1

公开(公告)日：1979-08-16

申请号：DE2901172

申请日：1979-01-13

Applicant: IBM

Inventor： KUMAR ANANDA HOSAKERE ,  MCMILLAN PETER ,  TUMMALA RAO RAMAMOHANA

IPC: H01L21/70 ,  C03C3/083 ,  C03C3/085 ,  C03C3/091 ,  C03C10/00 ,  C03C10/06 ,  C03C10/12 ,  H01B3/02 ,  H01L21/48 ,  H01L23/08 ,  H01L23/15 ,  H01L23/52 ,  H05K1/03 ,  H05K3/46 ,  C03C3/22 ,  C03B32/00

Abstract: Sintered glass-ceramic substrates containing multi-level, interconnected thick-film circuit patterns of highly conductive metals such as gold, silver or copper are provided which can be fired in air (for gold and silver) or in neutral atmospheres (for copper) at temperatures below the melting points of these metals. This has been made possible by the discovery that finely divided powders of certain glasses described herein sinter to essentially zero porosity at temperatures below 1000 DEG C. while simultaneously maturing to glass-ceramics of low dielectric constant, high flexural strength and low thermal expansivity.

公开(公告)号：DE3363943D1

公开(公告)日：1986-07-10

申请号：DE3363943

申请日：1983-09-23

Applicant: IBM

Inventor： ADWALPALKER AVINASH SRIDAD ,  KUMAR ANANDA HOSAKERE ,  WEISMANN RENEE LYNN

IPC: H05K3/46 ,  B08B3/12 ,  C04B41/53 ,  C25D5/48 ,  H01L21/48 ,  H01L23/12 ,  H05K1/09 ,  H05K3/04 ,  H05K3/22 ,  H05K3/24 ,  C04B41/91

公开(公告)号：DK495885D0

公开(公告)日：1985-10-29

申请号：DK495885

申请日：1985-10-29

Applicant: IBM

Inventor： HERRON LESTER WYNN ,  KUMAR ANANDA HOSAKERE

IPC: H01L23/12 ,  C23C10/04 ,  H01L21/388 ,  H01L21/48 ,  H05K1/03 ,  H05K1/09 ,  H05K3/24 ,  C23C

Abstract: In a maskless metal cladding process for plating an existing metallurgical pattern (13), a protective layer (16) is utilized to isolate those areas of underlying metallurgy on which additional metal plating is not desired. The layer acts as an isolation barrier to protect the underlying metallurgy from deposition and subsequent diffusion of the heavy metal overlay (17). The composition of the protective layer is selected as one having sufficient mechanical integrity to withstand process handling and support the gold overlay and having the thermal integrity to withstand the high temperatures reached during metal sputtering and diffusion processes. The isolation barrier layer has an organic component as a binder which thermally decomposes, either in a heating step before metal deposition or during the diffusion cycle, leaving no carbonaceous residue but leaving an inert, inorganic standoff to support the metal. After diffusion of the metal, the remaining inorganic standoff layer, overlying metal and any undiffused metal remaining on the non-patterned substrate is easily removed by a standard technique, such as ultrasonics.

公开(公告)号：DE3261159D1

公开(公告)日：1984-12-13

申请号：DE3261159

申请日：1982-02-25

Applicant: IBM

Inventor： FURY MICHAEL ANDREW ,  KUMAR ANANDA HOSAKERE

IPC: H05K1/09 ,  B22F7/04 ,  C04B41/52 ,  C04B41/89 ,  H05K3/24 ,  H05K3/46 ,  C04B41/14

Abstract: A process for forming a substantially glass free surface on screened refractory metallurgy areas on a ceramic substrate wherein a thin layer of Pd is deposited over the metallurgy areas and the metallurgy areas subsequently sintered causing the surface refractory metal particles to be fused into a substantially solid metallurgy layer under the catalyzing influence of the Pd.