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    Extending range of lithographic simulation integral
    11.
    发明专利
    Extending range of lithographic simulation integral 有权
    扩展的平面模拟集成范围

    公开(公告)号：JP2005128557A

    公开(公告)日：2005-05-19

    申请号：JP2004310633

    申请日：2004-10-26

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： GALLATIN GREGG M ,  GOFMAN EMANUEL ,  LAI KAFAI ,  LAVIN MARK A ,  MUKHERJEE MAHARAJ ,  RAMM DOV ,  ROSENBLUTH ALAN E ,  SHLAFMAN SHLOMO

    IPC: G03F1/08 ,  G03F1/14 ,  H01L21/027

    CPC classification number: G03F1/36 ,  G03F1/70

    Abstract: PROBLEM TO BE SOLVED: To provide a method for calculating intermediate-range and long-range image contributions from mask polygons.
    SOLUTION: An algorithm is introduced having application to optical proximity correction in optical lithography. A finite integral for each sector of a polygon replaces an infinite integral. A finite integral is achieved by integrating over two triangles instead of integrating on full sectors. An analytical approach is presented for a power law kernel to reduce the numerical integration of a sector to an analytical expression evaluation. The mask polygon is divided into a plurality of regions to calculate effects of interaction such as intermediate-range and long-range effects, by truncating the mask instead of truncating the kernel function.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种用于从掩模多边形计算中间范围和远程图像贡献的方法。 解决方案：引入了一种应用于光学光刻中的光学邻近校正的算法。 多边形的每个扇区的有限积分代替无限积分。 通过对两个三角形进行积分而不是整个扇区进行积分来实现有限积分。 针对幂律内核提出了一种分析方法，以减少一个部门与分析表达式评估的数值整合。 掩模多边形被划分成多个区域，以通过截断掩码而不是截断核函数来计算诸如中间范围和长距离效应的交互的效果。 版权所有（C）2005，JPO＆NCIPI

    13.
    发明专利
    未知

    公开(公告)号：AT519169T

    公开(公告)日：2011-08-15

    申请号：AT07844831

    申请日：2007-11-02

    Applicant: IBM

    Inventor： LAI KAFAI ,  ROSENBLUTH ALAN E ,  GALLATIN GREGG M ,  MUKHERJEE MAHARAJ

    IPC: G06F17/50

    Abstract: A fast method of verifying a lithographic mask design is provided wherein catastrophic errors are identified by iteratively simulating and verifying images for the mask layout using progressively more accurate image models, including optical and resist models. Progressively accurate optical models include SOCS kernels that provide successively less influence. Corresponding resist models are constructed that may include only SOCS kernel terms corresponding to the optical model, or may include image trait terms of varying influence ranges. Errors associated with excessive light, such as bridging, side-lobe or SRAF printing errors, are preferably identified with bright field simulations, while errors associated with insufficient light, such as necking or line-end shortening overlay errors, are preferably identified with dark field simulations.

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