公开(公告)号：AU4992472A

公开(公告)日：1974-06-13

申请号：AU4992472

申请日：1972-12-11

Applicant: IBM

Inventor： BAITINGER UTZ ,  NAJMANN KNUT ,  REMSHARDT ROLF ,  WIEDMANN SIEGFRIED ,  BERGER HORST ,  PIETRASS HANSJORG

IPC: G11C7/20 ,  G11C11/411 ,  G11C17/08 ,  H01L27/102 ,  H03K3/286 ,  H03K3/356 ,  G11C11/40 ,  H01L19/00

公开(公告)号：FR2304991A1

公开(公告)日：1976-10-15

申请号：FR7602996

申请日：1976-01-29

Applicant: IBM

Inventor： BERGER HORST ,  HEUBER KLAUS ,  KLEIN WILFRIED ,  NAJMANN KNUT

IPC: G11C11/414 ,  G11C11/411 ,  G11C11/416 ,  G11C11/40

Abstract: The invention relates to a circuit arrangement for operating the read/write cycles of an integrated semiconductor memory storage system whose storage cells consist of flip flops with bipolar switching transistors, Schottky diodes as read/write elements coupling the cell to the bit lines, and high-resistivity resistors, or transistors controlled as current sources, as load elements, in several phases.

公开(公告)号：FR2295527A1

公开(公告)日：1976-07-16

申请号：FR7533269

申请日：1975-10-20

Applicant: IBM

Inventor： BAITINGER UTZ DR ,  NAJMANN KNUT ,  HAUG WERNER

IPC: G11C11/411 ,  H01L21/8229 ,  H01L27/07 ,  H01L27/102 ,  G11C11/40

Abstract: A semiconductor storage circuit for use in monolithic memories. The circuit is comprised of a storage cell coupled to input-output bit lines through active devices having symmetrical conduction properties. The storage cell can be comprised of a pair of cross coupled bipolar transistors having resistors as collector load devices. Schottky field effect transistors (MESFET's) are active devices having symmetrical conduction properties.

公开(公告)号：FR2293766A1

公开(公告)日：1976-07-02

申请号：FR7532210

申请日：1975-10-13

Applicant: IBM

Inventor： HEUBER KLAUS ,  KLEIN WILFRIED ,  NAJMANN KNUT ,  WIEDMANN SIEGFRIED

IPC: G11C11/414 ,  G11C11/411 ,  G11C11/415 ,  G11C7/00 ,  G11C11/40