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    ORDERED TWO-PHASE DIELECTRIC FILM, AND SEMICONDUCTOR DEVICE CONTAINING THE SAME
    11.
    发明专利
    ORDERED TWO-PHASE DIELECTRIC FILM, AND SEMICONDUCTOR DEVICE CONTAINING THE SAME 未知

    公开(公告)号：MY126213A

    公开(公告)日：2006-09-29

    申请号：MYPI20021589

    申请日：2002-04-30

    Applicant: IBM

    Inventor： GATES STEPHEN MCCONELL ,  MURRAY CHRISTOPHER B ,  NITTA SATYANARAYANA V ,  PURUSHOTHAMAN SAMPATH

    IPC: B32B3/10 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

    Abstract: A POROUS, LOW-K DIELECTRIC FILM THAT HAS GOOD MECHANICAL PROPERTIES AS WELL AS A METHOD OF FABRICATING THE FILM AND THE USE OF THE FILM AS A DIELECTRIC LAYER BETWEEN METAL WIRING FEATURES ARE PROVIDED . THE POROUS, LOW-K DIELECTRIC FILM INCLUDES A FIRST PHASE OF MONODISPERSED PORES HAVING A DIAMETER OF FROM ABOUT 1 TO ABOUT 10 NM THAT ARE SUBSTANTIALLY UNIFORMLY SPACED APART AND ARE ESSENTIALLY LOCATED ON SITES OF A THREE-DIMENSIONAL PERIODIC LATTICE; AND A SECOND PHASE WHICH IS SOLID SURROUNDING THE FIRST PHASE. SPECIFICALLY, THE SECOND PHASE OF THE FILM INCLUDES (i) AN ORDERED ELEMENT THAT IS COMPOSED OF NANOPARTICLES HAVING A DIAMETER OF FROM ABOUT 1 TO ABOUT 10 NM THAT ARE SUBSTANTIALLY UNIFORMLY SPACED APART AND ARE ESSENTIALLY ARRANGED ON SITES OF A THREE-DIMENSIONAL PERIODIC LATTICE, AND (ii) A DISORDERS ELEMENT COMPRISED OF A DIELECTRIC MATERIAL HAVING A DIELECTRIC CONSTANT OF ABOUT 2.8 OR LESS. (FIG 1A)

    Method for forming a porous dielectric material l ayer in a semiconductor device
    13.
    发明专利
    Method for forming a porous dielectric material l ayer in a semiconductor device 未知

    公开(公告)号：HK1055641A1

    公开(公告)日：2004-01-16

    申请号：HK03107854

    申请日：2003-10-31

    Applicant: IBM

    Inventor： DALTON TIMOTHY JOSEPH ,  GRECO STEPHEN EDWARD ,  HEDRICK JEFFREY CURTIS ,  NITTA SATYANARAYANA V ,  PURUSHOTHAMAN SAMPATH ,  RODBELL KENNETH PARKER ,  ROSENBERG ROBERT

    IPC: H01L21/316 ,  H01L21/31 ,  H01L21/768 ,  H01L23/532 ,  H01L

    Abstract: A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.

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