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公开(公告)号：GB2495453A
公开(公告)日：2013-04-10
申请号：GB201301225
申请日：2011-06-02
Applicant: IBM
Inventor： JOSEPH ERIC A , PARKIN STUART S P , ROTHWELL MARY B
Abstract: A method for forming a memory device includes forming a cavity having an inner surface with an undulating profile in a substrate, depositing a ferromagnetic material in the cavity, forming a reading element on the substrate proximate to a portion of the ferromagnetic material, and forming a writing element on the substrate proximate to a second portion of the ferromagnetic material.
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公开(公告)号：CA1341623C
公开(公告)日：2011-10-11
申请号：CA558109
申请日：1988-02-04
Applicant: IBM
Inventor： BEYERS ROBERT B , ENGLER EDWARD M , GRANT PAUL M , LIM GRACE S , PARKIN STUART S P
Abstract: Compositions having the formula A1 x m 2 x Cu3Oy, wherein A is Y, or a combination of Y, La, Lu, Sc or Yb; M is Ba, or a combination of Ba, Sr or Ca and y is sufficient to satisfy the valence demands, have been found to be bulk electrical superconductors at a temperature above 77°K. The compositions are single phase perovskite-like crystalline structures. They are made by a process involving intimately mixing the metal oxides or their precursors in the proper molar ratios, heating the mixture in the presence of oxygen to a temperature between about 800°C and about 1100°C and slowly cooling the mixture to room temperature in the presence of oxygen over a period of at least four hours.
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公开(公告)号：CA2054580C
公开(公告)日：1994-05-03
申请号：CA2054580
申请日：1991-10-31
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE A , LAMBERT STEVEN E , MAURI DANIELE , PARKIN STUART S P , SPERIOSU VIRGIL S , WILHOIT DENNIS R
Abstract: MAGNETORESISTIVE SENSOR BASED ON THE SPIN VALVE EFFECT A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：AU1278388A
公开(公告)日：1988-09-15
申请号：AU1278388
申请日：1988-03-08
Applicant: IBM
Inventor： BEYERS ROBERT B , ENGLER EDWARD M , GRANT PAUL M , LIM GRACE S , PARKIN STUART S P
IPC: C01G1/00 , C01G3/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24 , C01G3/02 , C01G57/00
Abstract: Compositions having the formula A1+/-xM2+/-xCu3Oy, wherein A is Y, or a combination of Y La, Lu, Sc or Yb; M is Ba, or a combination of Ba, Sr or Ca and y is sufficient to satisfy the valence demands, have been found to be bulk electrical superconductors at a temperature above 77K. The compositions are single phase perovskite-like crystalline structures. They are made by a process involving intimately mixing the metal oxides or their precursors in the proper molar ratios, heating the mixture in the presence of oxygen to a temperature between about 800 DEG C and about 1100 DEG C and slowly cooling the mixture to room temperature in the presence of oxygen over a period of at least four hours.
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