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公开(公告)号:DE69031460D1
公开(公告)日:1997-10-23
申请号:DE69031460
申请日:1990-10-05
Applicant: IBM
Inventor: LINDE HAROLD G , PREVITI-KELLY ROSEMARY A
IPC: C09D183/08 , C09D183/00 , H01L21/312
Abstract: An improved insulating layer is formed by applying to a suitable substrate an organic solution, prepared by reacting a aminoalkoxysilane monomer, an arylalkoxysilane or arylsilazane monomer and water in a solvent, and then heating the coated substrate under conditions so as to evaporate the solvent and form a layer of cured ladder-type silsesquioxane copolymer. The insulating layer, which demonstrates excellent planarizing and thermal stability characteristics, in particularly useful in semiconductor device applications.
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公开(公告)号:CA2039321A1
公开(公告)日:1991-10-31
申请号:CA2039321
申请日:1991-03-28
Applicant: IBM
Inventor: CRONIN JOHN E , KAANTA CARTER W , LEE PEI-ING P , PREVITI-KELLY ROSEMARY A , RYAN JAMES G , YOON JUNG H
Abstract: BU9-90-013 PROCESS FOR FORMING MULTI-LEVEL COPLANAR CONDUCTOR/INSULATOR FILM EMPLOYING, PHOTOSENSITIVE POLYIMIDE POLYMER COMPOSITIONS of to Disclosure Disclosed is a process for producing multi-level conductor/insulator films on a processed semiconductor substrate having a conductor pattern. The insulator layers, each comprise a photosensitive polyimide polymer composition, and this allows the desired wiring channels and stud vias to be formed directly in the insulator layers, without the use of separate masking layers and resulting image transfer steps, thus providing a less cumbersome and costly process.
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