公开(公告)号：WO0199181A2

公开(公告)日：2001-12-27

申请号：PCT/US0119241

申请日：2001-06-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： RAMACHANDRAN RAVIKUMAR ,  NAGEL NICOLAS ,  PARKS CHRISTOPHER

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8242

CPC classification number: H01L21/76849 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76861 ,  H01L21/7687 ,  H01L27/10855

Abstract: A method for cleaning an oxidized diffusion barrier layer, in accordance with the present invention, includes providing a conductive diffusion barrier layer (26) employed for preventing oxygen and metal diffusion therethrough and providing a wet chemical etchant (wet etch) including hydrofluoric acid. The diffusion barrier layer (26) is etched with the wet chemical etchant to remove oxides from the diffusion barrier layer such that by employing the wet chemical etchant linear electrical behavior is achieved through the diffusion barrier layer.

Abstract translation: 根据本发明的用于清洁氧化的扩散阻挡层的方法包括提供用于防止氧和金属扩散的导电扩散阻挡层（26），并提供包括氢氟酸的湿化学蚀刻剂（湿蚀刻）。 用湿化学蚀刻剂蚀刻扩散阻挡层（26），以从扩散阻挡层去除氧化物，使得通过使用湿式化学蚀刻剂，通过扩散阻挡层实现线性电性能。

公开(公告)号：WO0249090A3

公开(公告)日：2003-05-01

申请号：PCT/US0144921

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： ECONOMIKOS LAERTIS ,  RAMACHANDRAN RAVIKUMAR ,  SIMPSON ALEXANDER

IPC: H01L21/3105

CPC classification number: H01L21/31053

Abstract: A method for polishing a dielectric layer containing silicon (16) provides a fluorine-based compound (34) during a polishing process. The dielectric layer is polished in the presence of the fluorine based compound to accelerate a polishing rate of the dielectric layer.

Abstract translation: 用于抛光含硅（16）的电介质层的方法在抛光过程中提供氟基化合物（34）。 在氟基化合物的存在下对电介质层进行研磨，以加速电介质层的研磨速度。

公开(公告)号：WO0199170A3

公开(公告)日：2002-05-02

申请号：PCT/US0119656

申请日：2001-06-20

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM ,  TOSHIBA KK

Inventor： NOJO HARUKI ,  PANDEY SUMIT ,  STEPHENS JEREMY ,  RAMACHANDRAN RAVIKUMAR

IPC: C09G1/02 ,  H01L21/3105 ,  C09G1/00

CPC classification number: H01L21/31053 ,  C09G1/02

Abstract: An aqueous based ceria slurry system and method for chemical mechanical polishing of semiconductor wafers, the slurry comprising less than 5 wt % abrasive cerium oxide particles and up to about the critical micelle concentration of a cationic surfactant, absent other abrasives, in a neutral to alkaline pH solution is disclosed. Also disclosed is slurry comprising a blend of surfactants including a pre-existing amount of anionic surfactant and an added amount of cationic and/or non-ionic surfactant.

Abstract translation: 一种用于半导体晶片的化学机械抛光的水性二氧化铈浆料系统和方法，所述浆料包含小于5重量％的磨料氧化铈颗粒，并且高达约临界胶束浓度的阳离子表面活性剂，没有其它研磨剂，在中性至碱性 公开了pH溶液。 还公开了包含表面活性剂的共混物的浆料，其包括预先存在量的阴离子表面活性剂和加入量的阳离子和/或非离子表面活性剂。

公开(公告)号：DE69820397T2

公开(公告)日：2004-10-28

申请号：DE69820397

申请日：1998-10-12

Applicant: SIEMENS AG ,  IBM

Inventor： RATH DAVID LEE ,  RAMACHANDRAN RAVIKUMAR

IPC: C09D9/00 ,  C09K13/08 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  C23F1/16 ,  H01L21/302 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311

Abstract: An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulphuric acid and about .01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone, and about 0.01 to 100 ppm of hydrofluoric acid is effective in removing polymer and via residue from a substrate or conductive material, and especially from an integrated circuit chip having aluminum lines thereon.

公开(公告)号：DE60003703T2

公开(公告)日：2004-04-22

申请号：DE60003703

申请日：2000-09-05

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： NOJO HARUKI ,  SCHUTZ J ,  RAMACHANDRAN RAVIKUMAR

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/3105

Abstract: An aqueous slurry-less composition for chemical-mechanical-polishing of a silicon dioxide workpiece comprising: a cationic surfactant that is soluble and ionized at neutral to alkaline pH conditions, in which the cationic surfactant is present in an aqueous slurry-less composition in an amount less than its critical micelle concentration.

公开(公告)号：DE60003703D1

公开(公告)日：2003-08-07

申请号：DE60003703

申请日：2000-09-05

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： NOJO HARUKI ,  SCHUTZ J ,  RAMACHANDRAN RAVIKUMAR

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/3105

Abstract: An aqueous slurry-less composition for chemical-mechanical-polishing of a silicon dioxide workpiece comprising: a cationic surfactant that is soluble and ionized at neutral to alkaline pH conditions, in which the cationic surfactant is present in an aqueous slurry-less composition in an amount less than its critical micelle concentration.

公开(公告)号：HK1019774A1

公开(公告)日：2000-02-25

申请号：HK99104858

申请日：1999-10-28

Applicant: IBM ,  SIEMENS CORP

Inventor： RATH DAVID LEE ,  RAMACHANDRAN RAVIKUMAR

IPC: C09D9/00 ,  C09K13/08 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  C23F1/16 ,  H01L21/302 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311 ,  H01L ,  C09K ,  C23F

Abstract: An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulphuric acid and about .01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone, and about 0.01 to 100 ppm of hydrofluoric acid is effective in removing polymer and via residue from a substrate or conductive material, and especially from an integrated circuit chip having aluminum lines thereon.

公开(公告)号：RU2498446C2

公开(公告)日：2013-11-10

申请号：RU2011132473

申请日：2009-11-19

Applicant: IBM ,  FRISKEJL SEMIKONDAKTOR INK

Inventor： RAMACHANDRAN RAVIKUMAR ,  JAN KHUNVEHN ,  MOUMEN NAIM ,  SHEHFFER DZHEJMS KENION ,  KRISHNAN SIDDART A ,  VON KEJT KVON KHON ,  KVON UNOKH ,  BELJANSKI MAJKL P ,  UAJZ RICHARD

IPC: H01L21/3205 ,  B82B3/00

Abstract: Изобретениеотноситсяк получениюмногослойнойзатворнойструктурыдляполевоготранзистора. Сущностьизобретения: способполучениямногослойнойзатворнойструктурыдляполевыхтранзистороввключаетформированиеметаллсодержащегослоянепосредственнонапервомслоенитридатитана TiN, покрывающемобластиполупроводниковойподложки, предназначенныедляпервогои второготиповполевыхтранзисторов, формированиезащитногослояпутемнанесениявторого TiN-слояповерхметаллсодержащегослоя, формированиерисунканавтором TiN-слоеи металлсодержащемслоедляпокрытиятолькопервойчастипервого TiN-слоя, покрывающейобласть, предназначеннуюдляполевыхтранзисторовпервоготипа, вытравливаниевторойчастипервого TiN-слоя, оставшейсяоткрытойприформированиирисунка, втовремякакперваячастьпервого TiN-слояостаетсязащищеннойоттравлениязасчетеезакрытияпоменьшеймеречастьютолщиныметаллсодержащегослоя, накоторомсформированрисунок, иформированиетретьего TiN-слоя, покрывающегообластьполупроводниковойподложки, предназначеннуюдлявтороготипаполевыхтранзисторов. Изобретениеобеспечиваетусовершенствованиетехнологииполучениямногослойнойзатворнойструктуры. 3 н. и 24 з.п. ф-лы, 9 ил.

公开(公告)号：DE102004060891A1

公开(公告)日：2005-08-11

申请号：DE102004060891

申请日：2004-12-17

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： RADENS CARL ,  DYER THOMAS W ,  SUNG CHUN-YUNG ,  DIVAKARUNI RAMACHANDRA ,  RAMACHANDRAN RAVIKUMAR

IPC: H01L21/8242 ,  H01L29/94 ,  H01L27/108

公开(公告)号：DE102005063468B4

公开(公告)日：2009-05-20

申请号：DE102005063468

申请日：2005-11-15

Applicant: QIMONDA AG ,  IBM

Inventor： SETTLEMYER KENNETH ,  RAMACHANDRAN RAVIKUMAR ,  KIM MIN-SOO ,  KWON OH-JUNG

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.