公开(公告)号：WO0199181A2

公开(公告)日：2001-12-27

申请号：PCT/US0119241

申请日：2001-06-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： RAMACHANDRAN RAVIKUMAR ,  NAGEL NICOLAS ,  PARKS CHRISTOPHER

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8242

CPC classification number: H01L21/76849 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76861 ,  H01L21/7687 ,  H01L27/10855

Abstract: A method for cleaning an oxidized diffusion barrier layer, in accordance with the present invention, includes providing a conductive diffusion barrier layer (26) employed for preventing oxygen and metal diffusion therethrough and providing a wet chemical etchant (wet etch) including hydrofluoric acid. The diffusion barrier layer (26) is etched with the wet chemical etchant to remove oxides from the diffusion barrier layer such that by employing the wet chemical etchant linear electrical behavior is achieved through the diffusion barrier layer.

Abstract translation: 根据本发明的用于清洁氧化的扩散阻挡层的方法包括提供用于防止氧和金属扩散的导电扩散阻挡层（26），并提供包括氢氟酸的湿化学蚀刻剂（湿蚀刻）。 用湿化学蚀刻剂蚀刻扩散阻挡层（26），以从扩散阻挡层去除氧化物，使得通过使用湿式化学蚀刻剂，通过扩散阻挡层实现线性电性能。

公开(公告)号：WO02054457A2

公开(公告)日：2002-07-11

申请号：PCT/US0143904

申请日：2001-11-14

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： LIAN JINGYU ,  LIN CHENTING ,  NAGEL NICOLAS ,  WISE MICHAEL

IPC: H01L21/02

CPC classification number: H01L28/75 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  Y10S257/906 ,  Y10S257/908

Abstract: A multi-layer electrode (246) and method of fabrication thereof in which a conductive region (244) is separated from a barrier layer (222) by a first conductive liner (240) and a second conductive liner (242). First conductive layer (240) comprises Pt, and second conductive liner (242) comprises a thin layer of conductive oxide. The multi-layer electrode (246) prevents oxygen diffusion through the top conductive region (244) and reduces material variation during electrode patterning.

Abstract translation: 一种多层电极（246）及其制造方法，其中通过第一导电衬垫（240）和第二导电衬套（242）将导电区域（244）与阻挡层（222）分离。 第一导电层（240）包括Pt，并且第二导电衬垫（242）包括导电氧化物的薄层。 多层电极（246）防止氧扩散通过顶部导电区域（244）并且减少电极图案化期间的材料变化。

公开(公告)号：DE60122872T2

公开(公告)日：2007-04-19

申请号：DE60122872

申请日：2001-05-02

Applicant: QIMONDA AG ,  IBM

Inventor： WANG YUN-YU ,  JAMMY RAJARAO ,  KIMBALL J ,  KOTECKI E ,  LIAN JENNY ,  LIN CHENTING ,  MILLER A ,  NAGEL NICOLAS ,  SHEN HUA ,  WILDMAN S

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/8242

Abstract: A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.

公开(公告)号：DE60122872D1

公开(公告)日：2006-10-19

申请号：DE60122872

申请日：2001-05-02

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： WANG YUN-YU ,  JAMMY RAJARAO ,  KIMBALL J ,  KOTECKI E ,  LIAN JENNY ,  LIN CHENTING ,  MILLER A ,  NAGEL NICOLAS ,  SHEN HUA ,  WILDMAN S

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/8242

Abstract: A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.

公开(公告)号：DE102004016963A1

公开(公告)日：2004-11-18

申请号：DE102004016963

申请日：2004-04-06

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： WISE MICHAEL ,  LIMB YOUNG ,  WONG KWONG HON ,  LIAN JENNY ,  NAGEL NICOLAS

IPC: B32B9/04 ,  B32B15/04 ,  H01L21/02 ,  H01L21/8239 ,  H01L21/8242

Abstract: Si, Al, Al plus TiN, and IrO2 are used as adhesion layers to prevent peeling of noble metal electrodes, such as Pt, from a silicon dioxide (SiO 2 ) substrate in capacitor structures of memory devices.