公开(公告)号：CA1169586A

公开(公告)日：1984-06-19

申请号：CA383760

申请日：1981-08-12

Applicant: IBM

Inventor： THOMPSON RICHARD D ,  TSAUR BORYEU ,  TU KING-NING

IPC: H01L29/80 ,  H01L21/28 ,  H01L21/285 ,  H01L21/329 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L29/64

Abstract: SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER SILICIDE CONTACTS AND METHOD THEREFOR In the practice of this disclosure, rare earth disilicide low Schottky barriers (? 0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of ? 0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (? 0.8 eV) and low (? 0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.

公开(公告)号：CA1062657A

公开(公告)日：1979-09-18

申请号：CA249389

申请日：1976-04-01

Applicant: IBM

Inventor： AHN KIE Y ,  BAJOREK CHRISTOPHER H ,  ROSENBERG ROBERT ,  TU KING-NING

IPC: G11B5/66 ,  C01G49/02 ,  C23C14/08 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  H01F10/18 ,  H01F10/20 ,  H01F41/14 ,  H01F41/18 ,  H01F41/28 ,  C23C15/00

Abstract: EPITAXIAL PROCESS OF FORMING FERRITE, Fe3O4 AND .gamma.Fe2O3 THIN FILMS ON SPECIAL MATERIALS A first thin film of appropriate texture, lattice constant, and crystal structure, such as body centered cubic vanadium or chromium with (110) texture is deposited upon a rigid or flexible substrate forming a plurality of polycrystals. A ferrite such as magnetite (Fe3O4) is sputtered from a target onto the first thin film forming a mixture of .gamma.Fe2O3 and Fe3O4 substantially completely without formation of Fe or other oxides of iron, providing good magnetic characteristics and resistance to corrosion. The substrate temperature can be maintained as low as 200.degree.C for both steps when sputtering or evaporation is employed.

公开(公告)号：DE2609087A1

公开(公告)日：1976-12-30

申请号：DE2609087

申请日：1976-03-05

Applicant: IBM

Inventor： BAGLIN JOHN EDWARD ,  DISTEFANO THOMAS HERMAN ,  TU KING-NING

IPC: H01L21/265 ,  C03C23/00 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/316 ,  H01L29/51 ,  C03C21/00

Abstract: 1519695 Densifying glass INTERNATIONAL BUSINESS MACHINES CORP 5 March 1976 [11 June 1975] 08844/76 Heading C1M [Also in Division H1] The dielectric breakdown strength of a vitreous insulating layer less than 105000 Š thick of an electronic device is increased by irradiating the layer, during or after its formation, with ions of H, He, Ne, Ar, Kr or Xe at a dosage and energy so as to increase the density of the layer by at least 1% without the ions penetrating completely the layer, and then annealing the layer. The vitreous layer may be fused SiO 2 on a substrate of, e.g., silicon. The device 30-1 comprising the vitreous layer may be mounted on plate 30-2 in mounts 30-3. Ions from source 12 are passed through accelerator 14, then through a momentum analyzing magnet 16 and beam scanner plates 18-1, 18-2, 20-1, 20-2, and directed on to the vitreous layer (e.g. at a dosage of 10 13 -10 17 ions/cm 2 .). The annealing, which may be concurrent with the irradiation may be at 200-800‹ C.