公开(公告)号：DE102008010854A1

公开(公告)日：2009-09-10

申请号：DE102008010854

申请日：2008-02-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD

IPC: H01L27/06 ,  H01L21/8232 ,  H01L29/78 ,  H03K17/0412 ,  H03K17/16 ,  H03K17/687

Abstract: The arrangement (1) has a gate resistor (RG) arranged between a gate (G) of a power transistor (TH) e.g. low side switch, and a connection point (H) in a control circuit of the power transistor. A switchable element (2) e.g. depletion MOSFET, is provided between the connection point and a source (S) of the power transistor. The switchable element maintains the connection of the connection point with the source of the transistor during a switching off phase and/or a turn-off phase of the transistor. A parasitic inductor is arranged between the connection point and the source of the transistor. An independent claim is also included for a method for producing a semiconductor device arrangement.

公开(公告)号：DE10309400B4

公开(公告)日：2009-07-30

申请号：DE10309400

申请日：2003-03-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/70 ,  H01L29/78 ,  H01L29/861

Abstract: A semiconductor element comprises two semiconductor zones (10,20) of different conductivity types with a drift zone (30) between them comprising third and fourth semiconductor zones (31-36) of opposite types giving compensation from their charge carriers which varies vertically to the current flow (S) and depends on dopant level differences. An independent claim is also included for a non-compensating element as above.

公开(公告)号：DE10240914B4

公开(公告)日：2007-01-25

申请号：DE10240914

申请日：2002-09-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  ZVEREV ILIA

IPC: G01R19/00 ,  G01R15/20 ,  H01L23/58 ,  H02H3/08

Abstract: The circuit has a current measuring device for determining load current (I1) in a load transistor (T1). The current measuring device includes two current sensors comprising measuring transistors (T2,T3) connected to an evaluation circuit (10) which provides a current measurement signal dependent on the load current. Independent claims are included for a method of determining a signal dependent on the load current in a transistor, and for a semiconductor device.

公开(公告)号：DE10066053B4

公开(公告)日：2006-03-30

申请号：DE10066053

申请日：2000-12-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  AHLERS DIRK ,  STENGL JENS-PEER ,  DEBOY GERALD ,  WILLMEROTH ARMIN ,  RUEB MICHAEL ,  CUADRON MARION MIGUEL

IPC: H01L29/06 ,  H01L21/336 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78

公开(公告)号：DE50101271D1

公开(公告)日：2004-02-05

申请号：DE50101271

申请日：2001-01-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  HUESKEN HOLGER ,  LASKA THOMAS

IPC: H01L29/739 ,  H01L27/04 ,  H01L29/78 ,  H02M3/00 ,  H02M3/335 ,  H02M7/00 ,  H02M7/537

Abstract: A circuit configuration is used for off-load switching. The circuit configuration can be used as a component in a switch mode power supply, a clocked supply, a voltage regulator, and a lamp switch, wherein the circuit configuration is embodied as an IGBT, especially a field stop IGBT or alternately and additionally as a PT IGBT. A method for using the circuit configuration include three operating modes: in a first operating mode, power for a load is modulated by pulse modulation; in a second operating mode, the power is modulated by changing a switching-on time; and, in a third operating mode, both are implemented.

公开(公告)号：DE10122362A1

公开(公告)日：2002-11-21

申请号：DE10122362

申请日：2001-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  WILLMEROTH ARMIN ,  AUERBACH FRANZ ,  DEBOY GERALD ,  AHLERS DIRK ,  WEBER HANS

IPC: H01L29/06 ,  H01L29/167 ,  H01L29/739 ,  H01L29/78 ,  H01L29/36

Abstract: Semiconductor element arranged in a semiconductor body (1) and controlled by field effect comprises a source zone (6) and a drain zone (4a, 4b) of first conductivity; a body zone (5) arranged between the source and drain zones; and a gate electrode (8) via which a current-introducing channel zone (10) is formed in the body zone by applying a gate potential to the gate electrode. The body zone has a first dopant and a second dopant (16) of second conductivity which are partially ionized at room temperature and have a degree of ionization which increases with increasing temperature. Preferred Features: A first region with the first dopant is provided within the body zone and a second region with a second dopant with the second dopant is provided within the body zone.

公开(公告)号：DE19958234C2

公开(公告)日：2001-12-20

申请号：DE19958234

申请日：1999-12-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  AHLERS DIRK

IPC: H01L21/761 ,  H01L29/06 ,  H01L29/78 ,  G05F3/26 ,  H01L27/08

公开(公告)号：DE19958234A1

公开(公告)日：2001-06-21

申请号：DE19958234

申请日：1999-12-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  AHLERS DIRK

IPC: H01L21/761 ,  H01L29/06 ,  H01L29/78 ,  G05F3/26 ,  H01L27/08

Abstract: Two active cell regions (1,3) in a semiconductor body of one conductive type each have a zone (4) of the opposite conductive type and a zone (5) of the same type. A region (10) of the opposite conductive type lies between the cells and comprises diffused tubs of the other type. The first active cells (1) are preferably active transistor cells of the sensor of current mirror and the second active cells (3) are transistor cells of the main transistor of the current mirror.

公开(公告)号：DE10001876C1

公开(公告)日：2001-04-19

申请号：DE10001876

申请日：2000-01-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD

IPC: H01L27/02 ,  H01L29/78 ,  H03K17/0814 ,  H01L23/62 ,  H03K17/081

Abstract: The power transistor has an overvoltage protection stage to prevent an avalanche operating state, with at least one control gate (10) for a main current channel between drain (12) and source (14) connections of a main transistor (8) and at least one auxiliary gate (20) for an auxiliary current channel between drain (16) and source (18) connections of an auxiliary transistor (9). The auxiliary gate is connected to the drain connections via a blocking protective Zener diode (21).

公开(公告)号：DE102012203995A1

公开(公告)日：2012-09-20

申请号：DE102012203995

申请日：2012-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROESLER WERNER ,  DEBOY GERALD

IPC: H03K17/082

Abstract: Beschrieben wird ein Verfahren zum Steuern eines Stroms zwischen einer Energiequelle (200) und einer Last (400). Das Verfahren umfasst: Bereitstellen eines Schaltmoduls (300), das zwischen die Energiequelle (200) und die Last (400) gekoppelt ist, wobei das Schaltmodul zwei Eingangsanschlüsse (310, 311), die an die Energiequelle (200) gekoppelt sind, und zwei Ausgangsanschlüsse (312, 313), die an die Last (400) gekoppelt sind, und ein Halbleiterschaltelement, das zwischen einen der Eingangsanschlüsse (310, 311) und einen der Ausgangsanschlüsse (312, 313) gekoppelt ist aufweist; Messen wenigstens eines Stromparameters des Stroms (I) zwischen der Energiequelle (200) und der Last (400); und Unterbrechen des Stroms (I) zwischen der Energiequelle (200) und der Last (400) durch Ausschalten des Halbleiterschaltelements, wenn der wenigstens eine Stromparameter wenigstens einen Parameterschwellenwert erreicht oder übersteigt. Beschrieben wird außerdem ein Schaltmodul zu Schalten eines Stromes zwischen einer Energiequelle (200) und einer Last.