公开(公告)号：WO2004055962A3

公开(公告)日：2005-02-17

申请号：PCT/EP0314428

申请日：2003-12-17

Applicant: FRAUNHOFER GES FORSCHUNG ,  INFINEON TECHNOLOGIES AG ,  RADECKER MATTHIAS ,  DEBOY GERALD

Inventor： RADECKER MATTHIAS ,  DEBOY GERALD

IPC: H02M3/28 ,  H02M7/539

CPC classification number: H02M3/28 ,  H02M2001/0058 ,  Y02B70/1491

Abstract: The invention relates to a resonance converter for driving variable loads, wherein an input signal which is supplied by a switch (103) which is controlled by a control device (109) is initially converted into an output signal by a transformer (105). The dimensions and circuitry of the transformer (105) are such that the transformation ratio between the input signal and output signal ranges from 5:1 to 100:1 when nominal power is supplied to the variable load (107). The switching frequency of the switch (103) is controlled on the basis of phase displacement between the switch current and the load current for a modifiable load and/or variable input voltage, a variable dependent on the input voltage and a variable dependent on the output voltage. The inventive resonance converter enables variable loads to be driven efficiently with the aid of a transformer.

Abstract translation: 在用于通过由控制装置（109）控制的开关驱动可变负载（107）所涉及的谐振转换器，提供的输入信号首先由变压器（105）变换为输出信号进行转换。 变压器的尺寸和连接，使得当输送一个额定功率的可变负载，输入信号和第5输出信号之间的Abtransformationsverhältnis：1至100：1。 所述开关（103）的开关频率是在可变负载（107）和/或可变输入电压的开关电流和负载电流之间的相移，一个依赖于输入电压值和依赖于输出电压大小的频率的基础上控制的。 因此，本发明的谐振转换器使得它能够通过一个变压器（105）的装置有效地驱动可变负载。

公开(公告)号：WO0118870A3

公开(公告)日：2001-08-02

申请号：PCT/EP0008707

申请日：2000-09-06

Applicant: MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT ,  INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/167 ,  H01L21/20

CPC classification number: H01L21/26513 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/167

Abstract: A compensating component and a method for the production thereof are described. Compensating regions are produced by implanting sulfur or selenium in a p-conductive semiconductor layer or, are provided as p-conductive regions, which are doped with indium, thallium and/or palladium, in a cluster-like manner inside an n-conductive region.

公开(公告)号：DE10325748B4

公开(公告)日：2008-10-02

申请号：DE10325748

申请日：2003-06-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WILLMEROTH ARMIN ,  TIHANYI JENOE ,  DEBOY GERALD ,  ZVEREV ILIA ,  PFIRSCH FRANK

IPC: H01L29/808 ,  H01L29/06 ,  H01L29/24

公开(公告)号：DE10060828B4

公开(公告)日：2006-11-30

申请号：DE10060828

申请日：2000-12-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD

IPC: H01L29/78 ,  H01L21/60 ,  H01L23/485 ,  H01L29/06 ,  H01L29/417

公开(公告)号：DE10339488B3

公开(公告)日：2005-04-14

申请号：DE10339488

申请日：2003-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  DEBOY GERALD ,  HENNINGER RALF

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872

Abstract: The semiconductor component has a drift zone (40) formed below one surface (101) of a semiconductor body (100) so that it extends laterally between 2 doped terminal regions (20,30), at least one field electrode (50) projecting into the drift zone from the surface of the semiconductor body and electrically insulated from the semiconductor body by an insulation layer (52).

公开(公告)号：DE10325748A1

公开(公告)日：2005-01-05

申请号：DE10325748

申请日：2003-06-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WILLMEROTH ARMIN ,  TIHANYI JENOE ,  DEBOY GERALD ,  ZVEREV ILIA ,  PFIRSCH FRANK

IPC: H01L29/24 ,  H01L29/808

Abstract: Junction field effect transistor comprises p+> -conducting regions (4, 6) lying next to a control electrode (G) and extending together with and parallel to a drift zone (3) between electrodes in a semiconductor body (1).

公开(公告)号：DE10122364A1

公开(公告)日：2002-11-21

申请号：DE10122364

申请日：2001-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  AHLERS DIRK ,  DEBOY GERALD

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/06 ,  H01L29/167 ,  H01L29/78 ,  H03K17/0814 ,  H01L29/36

Abstract: A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the semiconductor component. When a reverse voltage is applied, the degree of compensation changes as a function of time and the breakdown voltage of the semiconductor component increases in a manner governed by the degree of compensation. The invention furthermore relates to a circuit configuration and to a method for doping a compensation layer according to the invention.

公开(公告)号：DE10122361A1

公开(公告)日：2002-11-21

申请号：DE10122361

申请日：2001-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  DEBOY GERALD ,  AHLERS DIRK ,  AUERBACH FRANZ ,  WILLMEROTH ARMIN

IPC: H01L29/06 ,  H01L29/167 ,  H01L29/78 ,  H01L29/8605 ,  H01L29/36

Abstract: Semiconductor element comprises a semiconductor layer (5) of first conductivity embedded in semiconductor body (1). The semiconductor layer has a partial dopant (16) of first conductivity which is incompletely ionized at room temperature and has a degree of ionization which increases with increasing temperature. Preferred Features: The dopant is arranged in a first region (15) of a body zone, in which the first region is arranged at a distance from a channel zone (10). The dopant is uniformly distributed within the semiconductor layer and/or in the body zone.

公开(公告)号：DE19942677C2

公开(公告)日：2001-08-16

申请号：DE19942677

申请日：1999-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L29/06 ,  H01L29/167 ,  H01L29/78

公开(公告)号：DE102012203995B4

公开(公告)日：2021-02-04

申请号：DE102012203995

申请日：2012-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RÖSSLER WERNER ,  DEBOY GERALD

IPC: H03K17/082

Abstract: Verfahren zum Schalten eines Stromes zwischen einer Energiequelle (200) und einer Last, wobei das Verfahren aufweist:Betreiben eines Schaltmoduls (300), das zwischen die Energiequelle (200) und die Last gekoppelt ist und das zwei Eingangsanschlüsse (310, 312), die an die Energiequelle (200) gekoppelt sind, zwei Ausgangsanschlüsse (312, 313), die an die Last (400) gekoppelt sind, und wenigstens ein Halbleiterschaltelement (340), das zwischen einen der Eingangsanschlüsse und einen der Ausgangsanschlüsse gekoppelt ist, aufweist;Betreiben des Schaltmoduls in einem ersten Schaltbetrieb, bei dem das wenigstens eine Halbleiterschaltelement (340) getaktet für eine Ein-Dauer eingeschaltet und für eine Aus-Dauer ausgeschaltet wird; undAuswerten wenigstens eines elektrischen Parameters in dem Schaltmodul und Überführen des Schaltmoduls (300) vom ersten Schaltbetrieb in einen zweiten Schaltbetrieb abhängig von dem wenigstens einen elektrischen Parameter,wobei im zweiten Schaltbetrieb das wenigstens eine Halbleiterschaltelement (340) derart eingeschaltet wird, dass die Zeitdauer der Ein-Dauer wenigstens dem 10-fachen der Zeitdauer der Ein-Dauer während des ersten Schaltbetriebs entspricht.