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公开(公告)号:DE10130099B4
公开(公告)日:2004-04-08
申请号:DE10130099
申请日:2001-06-21
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GAIL MARKUS , HESS ERWIN , POCKRANDT WOLFGANG , WEDEL ARMIN
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公开(公告)号:DE59709973D1
公开(公告)日:2003-06-05
申请号:DE59709973
申请日:1997-02-06
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZETTLER THOMAS , WINNERL JOSEF , GEORGAKOS GEORG , POCKRANDT WOLFGANG
IPC: H01L21/82 , B29C65/02 , B29L31/26 , H01L23/525 , H01L23/535 , H01L27/02
Abstract: The invention relates to a separable connecting bridge (fuse) with an electrically conductive, longitudinally continuous conductive track (1) of a given width transversely to its length of a second type of conductivity opposite to the first, said track being formed in a substrate (2, 2a) of a first type of conductivity, where the semiconductor material of the first type of conductivity has a concentration in relation to the material of the conductive track such that, at a predetermined activation temperature which is higher than the operating temperature of the connecting bridge (12, 13), an interruption takes place over the entire width (m) of the conductive track (1) through the diffusion of the semiconductor material of the first type of conductivity and/or the material of the conductive track (1) of the second type of conductivity. 00000
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公开(公告)号:DE59707516D1
公开(公告)日:2002-07-18
申请号:DE59707516
申请日:1997-07-10
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZELLNER ANGELA , RAESCHMEIER ANDREAS , POCKRANDT WOLFGANG
IPC: H01L21/822 , G06F1/00 , G06F12/14 , G06F21/87 , H01L23/525 , H01L23/544 , H01L23/58 , H01L27/04
Abstract: A semiconductor circuit, in particular for use in an integrated module, has at least one operational assembly with a drive circuit, such as a microprocessor, and a data memory. The semiconductor circuit has at least one initialization assembly for testing and/or for initializing the operational assembly. A disconnectable connecting line connects the operational assembly to the initialization assembly. In order to increase reliability, the initialization assembly is permanently disconnected from the operational assembly, by disconnecting the connecting lines, after the semiconductor circuit has been completed. In order to make it more difficult to reactivate the disconnected connecting lines, the semiconductor circuit has a potential line connected to the initialization assembly and/or to the operational assembly in a region of the connecting line. The initialization assembly and/or the operational assembly are configured in such a way that, when the potential line is connected to the connecting line, the initialization assembly is placed in an inactive state.
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公开(公告)号:DE19730116C2
公开(公告)日:2001-12-06
申请号:DE19730116
申请日:1997-07-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor: POCKRANDT WOLFGANG , SEDLAK HOLGER , VIEHMANN HANS-HEINRICH
IPC: G11C16/04 , G11C16/06 , G11C11/413
Abstract: The invention relates to a semiconductor memory having a non-volatile two-transistor memory cell which has an N-channel selection transistor and an N-channel memory transistor. The drive circuitry for the cell includes a P-channel transfer transistor. A transfer channel is connected to a row line leading to the memory cell. This enables the voltages required for programming to be obtained with relatively little technological complexity.
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公开(公告)号:BR9914136A
公开(公告)日:2001-06-19
申请号:BR9914136
申请日:1999-09-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GAIL MARKUS , WEDEL ARMIN , HESS ERWIN , POCKRANDT WOLFGANG
IPC: G06F12/14 , G06F21/02 , G06F21/24 , G06K19/073 , G07F7/10 , G11C16/10 , H03K19/173
Abstract: A circuit configuration includes at least one nonvolatile, electrically erasable and writable memory area. Each memory area is assigned a nonvolatile, electrically writable and erasable flag memory, which is connected through an address line, a programming line and an authentication line to the assigned memory area, a programming voltage source and a data verification circuit. In the event of an alteration in the content of a memory area, the state of the associated flag memory is changed and, after verification of the programmed memory area content, the flag memory is returned to its basic state.
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公开(公告)号:BR9810617A
公开(公告)日:2000-09-12
申请号:BR9810617
申请日:1998-04-09
Applicant: INFINEON TECHNOLOGIES AG
Inventor: POCKRANDT WOLFGANG
Abstract: The system checks whether authorization exists for at least two data processing devices to exchange data with one another. In the preferred embodiment, both data processing devices are of identical design. Check data are simultaneously produced, in response to a trigger signal, in both data processing devices. The check data are compared with one another in the data processing device to which a control function has been allocated.
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公开(公告)号:DE50014067D1
公开(公告)日:2007-03-29
申请号:DE50014067
申请日:2000-03-01
Applicant: INFINEON TECHNOLOGIES AG
Inventor: POCKRANDT WOLFGANG
IPC: G06F1/00 , G06F12/14 , G06F21/87 , G06K19/073 , H03K19/003
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公开(公告)号:DE50102646D1
公开(公告)日:2004-07-22
申请号:DE50102646
申请日:2001-12-06
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRUECKLMAYR FRANZ-JOSEF , MAY CHRISTIAN , POCKRANDT WOLFGANG , SEDLAK HOLGER
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公开(公告)号:AT268928T
公开(公告)日:2004-06-15
申请号:AT00993194
申请日:2000-11-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ALLINGER ROBERT , POCKRANDT WOLFGANG
Abstract: A method for operating a multistage counter in only one counting direction is described. The counting value of a single-stage auxiliary counter that can be changed in only one counting direction is changed in predetermined counting values of the multistage counter. The respective counting value states of the multistage counter and of the single-stage auxiliary counter are registered. First authenticity data is generated by logically linking the counting value of the auxiliary counter to supplementary data.
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公开(公告)号:AT239302T
公开(公告)日:2003-05-15
申请号:AT97914128
申请日:1997-02-06
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ZETTLER THOMAS , WINNERL JOSEF , GEORGAKOS GEORG , POCKRANDT WOLFGANG
IPC: H01L21/82 , B29C65/02 , B29L31/26 , H01L23/525 , H01L23/535 , H01L27/02
Abstract: The invention relates to a separable connecting bridge (fuse) with an electrically conductive, longitudinally continuous conductive track (1) of a given width transversely to its length of a second type of conductivity opposite to the first, said track being formed in a substrate (2, 2a) of a first type of conductivity, where the semiconductor material of the first type of conductivity has a concentration in relation to the material of the conductive track such that, at a predetermined activation temperature which is higher than the operating temperature of the connecting bridge (12, 13), an interruption takes place over the entire width (m) of the conductive track (1) through the diffusion of the semiconductor material of the first type of conductivity and/or the material of the conductive track (1) of the second type of conductivity. 00000
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