12.
    发明专利
    未知

    公开(公告)号:DE10219115A1

    公开(公告)日:2003-11-13

    申请号:DE10219115

    申请日:2002-04-29

    Abstract: A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.

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