公开(公告)号：DE102004004863A1

公开(公告)日：2005-09-01

申请号：DE102004004863

申请日：2004-01-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WALTER ANDREAS ,  SEZI RECAI ,  ENGL REIMUND ,  MALTENBERGER ANNA ,  SCHUMANN JOERG ,  WEITZ THOMAS

IPC: C07C211/50 ,  C07D345/00 ,  G11C11/21 ,  G11C13/00 ,  G11C13/02 ,  H01L27/24 ,  H01L27/28 ,  H01L29/08 ,  H01L35/24 ,  H01L51/30

公开(公告)号：DE10241620A1

公开(公告)日：2004-03-25

申请号：DE10241620

申请日：2002-09-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELIAN KLAUS ,  SCHUMANN JOERG

IPC: G03F1/00 ,  G03F7/09 ,  G03F7/095

Abstract: Lithographic structurization of a substrate with an electron beam, especially for producing photo-masks, comprises production of a resist system (1, 2) on the substrate (10) by applying electroconductive, water-insoluble lower resist layer(s) (1) and then upper resist layer(s) (2) of electron beam-sensitive photoresist. An Independent claim is also included for resist system of the specified layers (1) and (2) on a substrate, for use in an electron writing process for structurizing the substrate, especially a photo-mask.

公开(公告)号：DE102004037151A1

公开(公告)日：2006-03-23

申请号：DE102004037151

申请日：2004-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGL REIMUND ,  SCHUMANN JOERG ,  WALTER ANDREAS ,  SEZI RECAI ,  MALTENBERGER ANNA

IPC: H01L51/40 ,  C07F1/08 ,  C07F5/00 ,  C07F7/02 ,  C07F19/00 ,  C23C28/00 ,  G11C13/02 ,  H01L27/24 ,  H01L51/30

Abstract: Layers are produced, where the layers include a first layer formed of a metal and a second layer formed of an organic compound, the metal and the organic compound entering into an interaction, so that the layer serves as an electroactive layer for nonvolatile memories, the metal layer being deposited onto a substrate and, if appropriate, patterned, then being coated with an organic compound and being treated with a second organic compound.

公开(公告)号：DE102004037150A1

公开(公告)日：2006-03-02

申请号：DE102004037150

申请日：2004-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WALTER ANDREAS ,  WEITZ THOMAS ,  ENGL REIMUND ,  SEZI RECAI ,  MALTENBERGER ANNA ,  SCHUMANN JOERG

IPC: C07C255/10 ,  C07C255/34 ,  C07C255/35 ,  C07C325/02 ,  G11C13/00 ,  H01L51/05

Abstract: An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

公开(公告)号：DE10329865A1

公开(公告)日：2005-02-03

申请号：DE10329865

申请日：2003-07-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHUMANN JOERG ,  SEYFERT JENS

IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00

Abstract: Method for controlling a sequence of measurement steps for the alignment of a semiconductor wafer (10), whereby the wafer is illuminated with a regular arrangement of illumination fields (12). The last illumination field of a particular alignment step is used as the first illumination field of the next alignment step before corresponding alignment optics are moved to undertake the measurement.