MERGED-MASK MICRO-MACHINING PROCESS

    公开(公告)号:CA2378725A1

    公开(公告)日:2001-01-18

    申请号:CA2378725

    申请日:2000-07-13

    Abstract: The present invention provides merged-mask processes for fabricating micro- machined devices in general and mirrored assemblies for use in optical scanning devices in particular. The process includes (a) providing a substra te having a predetermined thickness; (b) applying a first masking layer on a first portion of the substrate and a second masking layer on a second portio n of the substrate, said second masking layer being at least as thick as the first masking layer; (c) etching a portion of the second masking layer to provide a first exposed portion of the substrate; (d) etching the first exposed portion of the substrate to a first depth; (e) etching the second masking layer to provide a second exposed portion of the substrate; and (f) etching simultaneously the first exposed portion of the substrate to a secon d depth and the second exposed portion of the substrate to a first depth. The process further comprises patterning the first masking layer before applying the second masking layer to provide the second portion of the substrate for etching and etching the first masking layer to expose the second portion of the substrate. The first and second masking layers are applied prior to etching the substrate.

    MERGED-MASK MICRO-MACHINING PROCESS
    18.
    发明公开
    MERGED-MASK MICRO-MACHINING PROCESS 有权
    麻醉师HERSTELLUNGSVERFAHREN MITüBERBLENDETENMASKEN

    公开(公告)号:EP1196788A4

    公开(公告)日:2003-01-15

    申请号:EP00945370

    申请日:2000-07-13

    Abstract: The present invention provides merged-mask processes for fabricating micro-machined devices in general and mirrored assemblies for use in optical scanning devices in particular. The process includes (a) providing a substrate having a predetermined thickness; (b) applying a first masking layer on a first portion of the substrate and a second masking layer on a second portion of the substrate, said second masking layer being at least as thick as the first masking layer; (c) etching a portion of the second masking layer to provide a first exposed portion of the substrate; (d) etching the first exposed portion of the substrate to a first depth; (e) etching the second masking layer to provide a second exposed portion of the substrate; and (f) etching simultaneously the first exposed portion of the substrate to a second depth and the second exposed portion of the substrate to a first depth. The process further comprises patterning the first masking layer before applying the second masking layer to provide the second portion of the substrate for etching and etching the first masking layer to expose the second portion of the substrate. The first and second masking layers are applied prior to etching the substrate.

    Abstract translation: 本发明提供了用于一般地制造微机械装置和特别是用于光学扫描装置的镜面组件的合并掩模工艺。 一种制造三维结构的方法,包括:提供衬底,将第一掩蔽材料层施加到所述衬底上,将第二掩蔽材料层施加到所述第一掩模材料的所述层上,将所述第二掩模材料的所述层 掩模材料,将第三掩模材料层施加到未被第二掩模材料的图案化层覆盖的部分上,第三掩模材料的层至少与第一和第二掩模材料的层的组合厚度一样厚 掩模材料,图案化第一和第三掩模材料的层,蚀刻衬底的暴露部分,蚀刻第一和第三掩模材料的层的暴露部分并蚀刻衬底的暴露部分。

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