公开(公告)号：GB2392329A

公开(公告)日：2004-02-25

申请号：GB0318456

申请日：2003-08-06

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/17 ,  H03H9/58

Abstract: An FBAR filter 10 may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators 38 formed on the same membrane 35. Each of the film bulk acoustic resonators 38 may be formed from a common lower conductive layer which is defined to form the bottom electrode 32 of each film bulk acoustic resonator 38. A common top conductive layer may be defined to form each top electrode 36 of each film bulk acoustic resonator 38. A common piezoelectric film layer 34 that may or may not be patterned, forms a continuous or discontinuous film. The plurality of FBARs 38 may be formed over a single backside cavity.